Photomasks

Patent metadata

Field	Value
Publication number	US-10620529-B2
Application number	US-201715602302-A
Country	US
Kind code	B2
Filing date	May 23, 2017
Priority date	Sep 6, 2016
Publication date	Apr 14, 2020
Grant date	Apr 14, 2020

Abstract

Disclosed is a photomask. The photomask comprises a substrate, a reflective layer on the substrate, and an absorption structure on the reflective layer. The absorption structure comprises absorption patterns spaced apart from each other on the reflective layer. The absorption structure may include dummy holes in at least one of the absorption patterns. The dummy holes exhaust hydrogen from the absorption structure. The photomask may include a barrier layer on the absorption structure. The barrier layer may reduce the amount of hydrogen entering the absorption structure.

First claim

What is claimed is:

1. A photomask comprising:
a substrate including a transfer region and a light shield region surrounding the transfer region, the light shield region configured to block transfer of light from the photomask;
a reflective layer on the substrate;
an absorption structure on the reflective layer;
and
a barrier layer over both the transfer region and the light shield region, the absorption structure including,
a plurality of absorption patterns spaced apart from one another on the reflective layer, and
a plurality of dummy holes in at least one of the plurality of absorption patterns and extending from a top surface of the barrier layer through the absorption structure, wherein
the barrier layer conformally covers a top surface of and sides of the plurality of the absorption patterns except where the dummy holes are provided,
at least one of the plurality of dummy holes is in at least the light shield region,
and

at least one of the plurality of dummy holes over the light shield region has a diameter less than a line width determined by a resolution limit of a lithography apparatus using the photomask.

2. The photomask of claim 1 , wherein, in at least one of the plurality of absorption patterns, at least two of the plurality of dummy holes are spaced apart at a width of less than 500 μm in a first direction parallel to a top surface of the substrate.

3. The photomask of claim 1 , wherein at least one of the plurality of absorption patterns is provided on the transfer region, the at least one of the plurality of absorption patterns including some of the plurality of dummy holes.

4. The photomask of claim 1 , wherein at least one of the plurality of absorption patterns includes an outer sidewall and an inner sidewall exposed through at least one of the plurality of dummy holes adjacent to the outer sidewall, the inner sidewall being spaced apart at a distance of less than 500 μm from the outer sidewall.

5. The photomask of claim 1 , wherein
the barrier layer includes the same material as the absorption structure, and includes a dopant doped into the material thereof.

6. The photomask of claim 5 , wherein, in the at least one of the plurality of absorption patterns, adjacent ones of dummy holes are spaced apart at a width of less than 500 μm in a first direction or in a second direction that is parallel to a top surface of the substrate while crossing the first direction.

7. The photomask of claim 5 , wherein the absorption structure and the barrier layer including the same material and the same dopant constitute a single layer.

8. The photomask of claim 1 , further comprising:
a capping layer between the reflective layer and the absorption structure, wherein
the at least one of the plurality of dummy holes over the light shield region exposes a top surface of the capping layer.

9. The photomask of claim 1 , wherein at least one of the plurality of dummy holes is configured to exhaust hydrogen from the absorption pattern.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kwon Sungwon
• Kim Yongkyu
• Kim Jinsu

Classifications

• G03F1/38 Primary

  Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof · CPC title

• G03F1/52

  Reflectors · CPC title

• G03F1/24

  Reflection masks; Preparation thereof · CPC title

• G03F1/54

  Absorbers, e.g. of opaque materials · CPC title

• G03F1/60

  Substrates · CPC title