Piezoelectric substrate and method of manufacturing the piezoelectric substrate, and liquid ejection head

Patent metadata

Field	Value
Publication number	US-10618285-B2
Application number	US-201715608111-A
Country	US
Kind code	B2
Filing date	May 30, 2017
Priority date	Jun 17, 2016
Publication date	Apr 14, 2020
Grant date	Apr 14, 2020

Abstract

Disclosed is a method of manufacturing a piezoelectric substrate, the method including: forming an intermediate layer of Ti and a lower electrode of Pt oriented in a (111) axis direction on a substrate without heating the substrate; applying a coating liquid for forming an orientation control layer made of lead titanate onto the lower electrode; drying the coating liquid at a predetermined temperature to form an orientation control layer precursor made of lead titanate; applying a coating liquid for forming a piezoelectric thin film made of lead zirconate titanate; drying the coating liquid at a predetermined temperature to form a piezoelectric precursor made of a lead zirconate titanate precursor; and collectively firing the orientation control layer precursor and the piezoelectric precursor to crystallize both the precursors, to thereby form a piezoelectric thin film made of lead zirconate titanate preferentially oriented in a (110) plane.

First claim

What is claimed is:

1. A piezoelectric substrate comprising:
a substrate including a SiO 2 layer as an outermost surface layer;
an intermediate layer made of one of Ti and TiO 2 , which is formed on the SiO 2 layer of the substrate;
a lower electrode made of Pt, which is formed on the intermediate layer;
an orientation control layer containing lead titanate, which is formed on the lower electrode; and
a piezoelectric layer, which is formed on the orientation control layer,
the piezoelectric layer containing lead zirconate titanate having a composition represented by Pb x (Zr (y) Ti (1-y) )O 3 , where x=1.0 to 1.2 and 0.4<y<0.6,
the piezoelectric layer having a ratio of a reflection intensity of a (110) plane with respect to a total reflection intensity of a (100) plane, the (110) plane, and a (111) plane of 70% or more, which is measured by an X-ray diffraction method, and having an average particle diameter of crystal particles in a surface of 1.0 μm or less.

2. The piezoelectric substrate according to claim 1 , wherein the intermediate layer has a thickness of 2 nm or more and 30 nm or less.

3. A liquid ejection head comprising:
a piezoelectric substrate comprising:
a substrate including a SiO 2 layer as an outermost surface layer;
an intermediate layer made of one of Ti and TiO 2 , which is formed on the SiO 2 layer of the substrate;
a lower electrode made of Pt, which is formed on the intermediate layer;
an orientation control layer containing lead titanate, which is formed on the lower electrode; and
a piezoelectric layer, which is formed on the orientation control layer,
the piezoelectric layer containing lead zirconate titanate having a composition represented by Pb x (Zr (y) Ti (1-y) )O 3 , where x=1.0 to 1.2 and 0.4<y<0.6,
the piezoelectric layer having a ratio of a reflection intensity of a (110) plane with respect to a total reflection intensity of a (100) plane, the (110) plane, and a (111) plane of 70% or more, which is measured by an X-ray diffraction method, and having an average particle diameter of crystal particles in a surface of 1.0 μm or less;

a liquid ejection orifice configured to eject a liquid; and
a pressure chamber communicating to the liquid ejection orifice.

Assignees

• Canon Kk

Inventors

• Numazawa Hiroto
• Nakasu Minako
• Kobayashi Motokazu
• Ohashi Yoshihiro

Classifications

• B41J2/161 Primary

  of film type, deformed by bending and disposed on a diaphragm · CPC title

• B41J2202/03

  Specific materials used · CPC title

• B41J2/1642

  thin film formation by CVD [chemical vapor deposition] · CPC title

• B41J2/1646

  thin film formation by sputtering · CPC title

• B41J2/1645

  thin film formation by spincoating · CPC title