n-Type semiconductor element, complementary type semiconductor device and method for manufacturing same, and wireless communication device in which same is used

Patent metadata

Field	Value
Publication number	US-10615352-B2
Application number	US-201716066858-A
Country	US
Kind code	B2
Filing date	Jan 19, 2017
Priority date	Jan 25, 2016
Publication date	Apr 7, 2020
Grant date	Apr 7, 2020

Abstract

An excellent complementary semiconductor device is provided using a simple process. An n-type drive semiconductor device including a substrate; and a source electrode, a drain electrode, a gate electrode, a gate insulating layer, and a semiconductor layer on the substrate; and including a second insulating layer on the opposite side of the semiconductor layer from the gate insulating layer; in which the second insulating layer contains an organic compound containing a bond between a carbon atom and a nitrogen atom; and in which the semiconductor layer contains a carbon nanotube composite having a conjugated polymer attached to at least a part of the surface thereof.

First claim

The invention claimed is:

1. An n-type semiconductor device comprising:
a substrate;
a source electrode, a drain electrode, and a gate electrode;
a semiconductor layer in contact with the source electrode and the drain electrode;
a gate insulating layer insulating the semiconductor layer from the gate electrode; and
a second insulating layer in contact with the semiconductor layer on the opposite side of the semiconductor layer from the gate insulating layer;
wherein the semiconductor layer contains a carbon nanotube composite having a conjugated polymer attached to at least a part of the surface thereof;
wherein the second insulating layer contains an organic compound containing a bond between a carbon atom and a nitrogen atom; and
wherein the second insulating layer comprises one or more compounds selected from the following general formulae (1) and (2):

wherein R 1 to R 4 independently represent a group constituted by one or more atoms selected from a hydrogen atom(s), a carbon atom(s), a nitrogen atom(s), an oxygen atom(s), a silicon atom(s), a phosphorus atom(s), and a sulfur atom(s); and
X 1 and X 2 independently represent a group represented by the following general formulae (3) to (8):

wherein R 5 to R 13 independently represent a group constituted by one or more atoms selected from a hydrogen atom(s), a carbon atom(s), a nitrogen atom(s), an oxygen atom(s), a silicon atom(s), a phosphorus atom(s), and a sulfur atom(s).

2. The n-type semiconductor device according to claim 1 , wherein the conjugated polymer comprises, in the repeating units thereof, a fused heteroaryl unit having a nitrogen-containing double bond in the ring thereof and a thiophene unit.

3. The n-type semiconductor device according to claim 1 , wherein R 1 to R 13 in the general formulae (1) to (8) are hydrocarbon groups.

4. The n-type semiconductor device according to claim 1 , wherein the second insulating layer comprises an amine compound having a ring structure.

5. The n-type semiconductor device according to claim 1 , wherein the second insulating layer comprises an organic compound having a structure of the general formula (1) or (2) and containing a ring structure containing the nitrogen atom shown in the formula (1) or (2) as a heteroatom.

6. The n-type semiconductor device according to claim 1 , wherein the second insulating layer comprises one or more compounds selected from an amidine compound and a guanidine compound.

7. The n-type semiconductor device according to claim 1 , wherein the gate insulating layer comprises an organic compound containing a bond between a silicon atom and a carbon atom.

8. The n-type semiconductor device according to claim 1 , wherein the gate insulating layer further comprises a metal compound containing a bond between a metal atom and an oxygen atom.

9. The n-type semiconductor device according to claim 8 , wherein the metal atom is aluminum.

10. An n-type semiconductor device comprising:
a substrate;
a source electrode, a drain electrode, and a gate electrode;
a semiconductor layer in contact with the source electrode and the drain electrode;
a gate insulating layer insulating the semiconductor layer from the gate electrode; and
a second insulating layer in contact with the semiconductor layer on the opposite side of the semiconductor layer from the gate insulating layer;
wherein the semiconductor layer contains a carbon nanotube; and
wherein the second insulating layer contains an organic compound having a structure of the general formula (2):

wherein R 4 represents a group constituted by one or more atoms selected from a hydrogen atom(s), a carbon atom(s), a nitrogen atom(s), an oxygen atom(s), a silicon atom(s), a phosphorus atom(s), and a sulfur atom(s); and
X 1 and X 2 independently represent a group represented by the following general formulae (3) to (8):

wherein R 5 to R 13 represent a group constituted by one or more atoms selected from a hydrogen atom(s), a carbon atom(s), a nitrogen atom(s), an oxygen atom(s), a silicon atom(s), a phosphorus atom(s), and a sulfur atom(s).

11. The n-type semiconductor device according to claim 10 , wherein the second insulating layer comprises an organic compound having a structure of the general formula (2) and containing a ring structure containing the nitrogen atom shown in the general formula (2) as a heteroatom.

12. The n-type semiconductor device according to claim 1 , wherein the total length of the carbon nanotube composite present per 1 μm 2 of the semiconductor layer is 1 μm to 50 μm.

13. A complementary semiconductor device comprising the n-type semiconductor device according to claim 1 and a p-type semiconductor device, wherein the p-type semiconductor device comprises:
a substrate;
a source electrode, a drain electrode, and a gate electrode;
a semiconductor layer in contact with the source electrode and the drain electrode; and
a gate insulating layer insulating the semiconductor layer from the gate insulating layer;
wherein the semiconductor layer of the p-type semiconductor device contains a carbon nanotube composite having a conjugated polymer attached to at least a part of the surface thereof.

14. The complementary semiconductor device according to claim 13 , wherein the p-type semiconductor device comprises a second insulating layer in contact with the semiconductor layer of the p-type semiconductor device on the opposite side of the semiconductor layer of the p-type semiconductor device from the gate insulating layer of the p-type semiconductor device.

15. The complementary semiconductor device according to claim 13 , wherein the source electrode and the drain electrode of the p-type semiconductor device and the source electrode and the drain electrode of the n-type semiconductor device are all composed of the same material.

16. The complementary semiconductor device according to claim 13 , wherein the semiconductor layer of the p-type semiconductor device and the semiconductor layer of the n-type semiconductor device are composed of the same material.

17. The complementary semiconductor device according to claim 13 , wherein the gate insulating layer of the p-type semiconductor device and the gate insulating layer of the n-type semiconductor device are composed of the same material.

18. A wireless communication device comprising at least the n-type semiconductor device according to claim 1 and an antenna.

19. A wireless communication device comprising at least the complementary semiconductor device according to claim 13 and an antenna.

Assignees

• Toray Industries

Inventors

• Shimizu Hiroji
• Murase Seiichiro
• Sakaii Daisuke

Classifications

• H01L51/0048

  Electricity · mapped topic

• H01L51/0036

  Electricity · mapped topic

• H01L51/0094

  Electricity · mapped topic

• H04B5/0062

  Electricity · mapped topic

• H01L51/0566

  Electricity · mapped topic