Electron multiplier for mass spectrometer

Patent metadata

Field	Value
Publication number	US-10615019-B2
Application number	US-201414571701-A
Country	US
Kind code	B2
Filing date	Dec 16, 2014
Priority date	Dec 27, 2013
Publication date	Apr 7, 2020
Grant date	Apr 7, 2020

Abstract

A secondary electron multiplier includes: a conversion dynode for emitting a secondary electron in response to an incident ion; a plurality of dynodes configured to have multi-stages from second to final stages for receiving the secondary electron; and a first voltage applying device for applying a first negative voltage to the conversion dynode and sequentially dividing the first negative voltage to apply to each of the second-stage and subsequent dynodes, wherein the secondary electron multiplier is configured to sequentially multiply the emitted secondary electron by the second-stage and subsequent dynodes. In the secondary electron multiplier, any of the second-stage and subsequent dynodes have a second voltage applying device for applying a second negative voltage. The secondary electron multiplier has an improved ion detection efficiency without a large reduction of a usable period thereof, thereby enhancing the sensitivity of a mass spectrometer.

First claim

What is claimed is:

1. A method for increasing an ion detection efficiency of a secondary electron multiplier, the method comprising the steps of:
applying a first negative voltage from a first voltage applying device to a conversion dynode of the secondary electron multiplier to set an amplification gain of the electron multiplier, the conversion dynode configured for emitting a secondary electron in response to an incident ion, wherein the secondary electron multiplier comprises a plurality of dynodes configured to have multi-stages from second to final stages for receiving the secondary electron;
sequentially dividing the first negative voltage to apply to each of the second-stage and subsequent dynodes, wherein the secondary electron multiplier is configured for sequentially multiplying the emitted secondary electron by the second-stage and subsequent dynodes;
applying a second negative voltage from a second voltage applying device separate from the first voltage applying device to independently bias a second negative voltage-applied dynode, wherein the second negative voltage-applied dynode is any of the second-stage and the subsequent dynodes; and
subsequent to the applying the first negative voltage and the applying the second negative voltage,
changing the first negative voltage applied to the same conversion dynode to increase an ion/electron conversion yield, by increasing an absolute value of the first negative voltage applied to the same conversion dynode; and
changing the second negative voltage in a controllable manner that increases a secondary electron emission efficiency at the second negative voltage-applied dynode and a dynode subsequent thereto, and recovers from a reduction of the amplification gain caused by deterioration of the electron multiplier, by increasing an absolute value of the second negative voltage.

2. The method according to claim 1 , wherein the second negative voltage-applied dynode is any of second- to fifth-stage dynodes of the plurality of dynodes.

3. The method according to claim 1 , wherein the second negative voltage-applied dynode is a third-stage dynode of the plurality of dynodes.

4. A secondary electron multiplier, comprising:
a conversion dynode for emitting a secondary electron in response to an incident ion;
a plurality of dynodes configured to have multi-stages from second to final stages for receiving the secondary electron;
a first voltage applying device configured for applying a first negative voltage to the conversion dynode and sequentially dividing the first negative voltage to apply to each of the second-stage and subsequent dynodes, the secondary electron multiplier being configured to sequentially multiply the emitted secondary electron by the second-stage and subsequent dynodes; and
a second voltage applying device separate from the first voltage applying device and configured for:
applying a second negative voltage to independently bias a second negative voltage-applied dynode, wherein the second negative voltage-applied dynode is any of the second-stage and subsequent dynodes; and
changing the second negative voltage to increase a secondary electron emission efficiency at the second negative voltage-applied dynode and a dynode subsequent thereto, and recover from a reduction of the amplification gain caused by deterioration of the electron multiplier, by increasing an absolute value of the second negative voltage.

5. The secondary electron multiplier according to claim 4 , wherein the second negative voltage-applied dynode is any of second- to fifth-stage dynodes of the plurality of dynodes.

6. The secondary electron multiplier according to claim 4 , wherein the second negative voltage-applied dynode is a third-stage dynode of the plurality of dynodes.

7. The secondary electron multiplier according to claim 4 , wherein the first voltage applying device is configured for changing the first negative voltage to increase an ion/electron conversion yield, by increasing an absolute value of the first negative voltage.

8. A secondary electron multiplier, comprising:
a conversion dynode for emitting a secondary electron in response to an incident ion;
a plurality of dynodes configured to have multi-stages from second to final stages for receiving the secondary electron;
a first voltage applying device configured for:
applying a first negative voltage to the conversion dynode and sequentially dividing the first negative voltage to apply to each of the second-stage and subsequent dynodes, the secondary electron multiplier being configured to sequentially multiply the emitted secondary electron by the second-stage and subsequent dynodes; and
changing the first negative voltage to increase an ion/electron conversion yield, by increasing an absolute value of the first negative voltage; and

a second voltage applying device separate from the first voltage applying device and configured for:
applying a second negative voltage to independently bias a second negative voltage-applied dynode, wherein the second negative voltage-applied dynode is any of the second-stage and subsequent dynodes; and
changing the second negative voltage to increase a secondary electron emission efficiency at the second negative voltage-applied dynode and a dynode subsequent thereto, and recover from a reduction of the amplification gain caused by deterioration of the electron multiplier, by increasing an absolute value of the second negative voltage.

9. The secondary electron multiplier according to claim 8 , wherein the second negative voltage-applied dynode is any of second- to fifth-stage dynodes of the plurality of dynodes.

10. The secondary electron multiplier according to claim 8 , wherein the second negative voltage-applied dynode is a third-stage dynode of the plurality of dynodes.

11. The method according to claim 1 , wherein the second negative voltage-applied dynode is a fourth-stage dynode of the plurality of dynodes.

12. The method according to claim 1 , wherein the second negative voltage-applied dynode is a fifth-stage dynode of the plurality of dynodes.

13. The method according to claim 1 , wherein a difference between the first negative voltage and the second negative voltage controls the electron emission efficiency at the second negative voltage-applied dynode.

14. The secondary electron multiplier according to claim 4 , wherein the second negative voltage-applied dynode is a fourth-stage dynode of the plurality of dynodes.

15. The secondary electron multiplier according to claim 4 , wherein the second negative voltage-applied dynode is a fifth-stage dynode of the plurality of dynodes.

16. The secondary electron multiplier according to claim 4 , wherein a difference between the first negative voltage and the second negative voltage controls the electron emission efficiency at the second negative voltage-applied dynode.

17. The secondary electron multiplier according to claim 8 , wherein the second negative voltage-applied dynode is a fourth-stage dynode of the plurality of dynodes.

18. The secondary electron multiplier according to claim 8 , wherein the second negative voltage-applied dynode is a fifth-stage dynode of the plurality of dynodes.

19. The secondary electron multiplier according to claim 8 , wherein a difference between the first negative voltage and the second negative voltage controls the electron emission efficiency at the second negative voltage-applied dynode.

Assignees

• Agilent Technologies Inc

Inventors

• Hirano Kazushi

Classifications

• H01J43/30

  Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for · CPC title

• H01J49/025 Primary

  Detectors specially adapted to particle spectrometers (data acquisition H01J49/0036; detectors per se G01T, e.g. G01T1/28, G01T1/29) · CPC title

• H01J43/26 Primary

  Box dynodes · CPC title

• H01J43/18

  Electrode arrangements using essentially more than one dynode · CPC title

• H01J43/025 Primary

  Circuits therefor · CPC title