Magnetoresistance effect element, magnetic memory, and magnetic device

Patent metadata

Field	Value
Publication number	US-10614866-B2
Application number	US-201816120960-A
Country	US
Kind code	B2
Filing date	Sep 4, 2018
Priority date	Sep 4, 2017
Publication date	Apr 7, 2020
Grant date	Apr 7, 2020

Abstract

A magnetoresistance effect element has a structure in which a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer are subsequently laminated and outer circumferential portions of the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer are covered with a first insulating film which contains silicon nitride as a main component and contains further boron nitride or aluminum nitride.

First claim

What is claimed is:

1. A magnetoresistance effect element comprising:
a structure in which a first ferromagnetic layer; a non-magnetic layer; and a second ferromagnetic layer are sequentially laminated,
wherein:
outer circumferential portions of the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer are covered with a first insulating film which contains silicon nitride as a main component and contains further boron nitride or aluminum nitride, and
a surface portion of the first insulating film opposite to the non-magnetic layer is covered with a second insulating film containing an oxide, a nitride, or an oxynitride.

2. The magnetoresistance effect element according to claim 1 ,
wherein at least one layer of the first ferromagnetic layer and the second ferromagnetic layer contains boron.

3. The magnetoresistance effect element according to claim 1 ,
wherein the boron nitride or the aluminum nitride forms grains and a plurality of grains are distributed inside the first insulating film.

4. The magnetoresistance effect element according to claim 1 ,
wherein a third insulating film containing an oxide, a nitride, or an oxynitride is provided between the non-magnetic layer and the first insulating film.

5. The magnetoresistance effect element according to claim 1 ,
wherein a metal film containing a metal element is provided in a portion of the surface of the first insulating film opposite to the non-magnetic layer.

6. A magnetoresistance effect element comprising:
a structure in which a first ferromagnetic layer; a non-magnetic layer; and a second ferromagnetic layer are sequentially laminated,
wherein:
outer circumferential portions of the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer are covered with a fifth insulating film which contains silicon nitride as a main component and contains further diamond-like carbon, and
a cap layer is provided on the portion of the surface of the second ferromagnetic layer opposite to the non-magnetic layer, the cap layer containing MgO or AB 2 O 4 having a spinel structure, where A represents Mg or Zn, and B represents Al, Ga, or In.

7. A magnetic memory comprising:
the magnetoresistance effect element according to claim 1 .

8. A magnetic device comprising:
the magnetic memory according to claim 7 installed in an LSI substrate as a built-in memory.

9. The magnetoresistance effect element according to claim 2 ,
wherein the boron nitride or the aluminum nitride forms grains and a plurality of grains are distributed inside the first insulating film.

10. The magnetoresistance effect element according to claim 2 ,
wherein a third insulating film containing an oxide, a nitride, or an oxynitride is provided between the non-magnetic layer and the first insulating film.

11. The magnetoresistance effect element according to claim 3 ,
wherein a third insulating film containing an oxide, a nitride, or an oxynitride is provided between the non-magnetic layer and the first insulating film.

12. The magnetoresistance effect element according to claim 2 ,
wherein a metal film containing a metal element is provided in a portion of the surface of the first insulating film opposite to the non-magnetic layer.

13. The magnetoresistance effect element according to claim 3 ,
wherein a metal film containing a metal element is provided in a portion of the surface of the first insulating film opposite to the non-magnetic layer.

14. The magnetoresistance effect element according to claim 4 ,
wherein a metal film containing a metal element is provided in a portion of the surface of the first insulating film opposite to the non-magnetic layer.

Assignees

• Tdk Corp

Inventors

• Sasaki Tomoyuki
• SHIOKAWA Yohei
• Yoshinari Jiro

Classifications

• G01R33/098

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• G01R33/093

  using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title

• G11C11/14 Primary

  using thin-film elements · CPC title

• H01L43/12

  Electricity · mapped topic