Ferromagnetic multilayer film, magnetoresistance effect element, and method for manufacturing ferromagnetic multilayer film

Patent metadata

Field	Value
Publication number	US-10613162-B2
Application number	US-201816099628-A
Country	US
Kind code	B2
Filing date	Feb 27, 2018
Priority date	Feb 28, 2017
Publication date	Apr 7, 2020
Grant date	Apr 7, 2020

Abstract

A ferromagnetic multilayer film includes first and second magnetization fixed layers, first and second interposed layers, and a magnetic coupling layer. The magnetization fixed layers are antiferromagnetically coupled by exchange coupling via the interposed layers and the magnetic coupling layer. A main element of the magnetic coupling layer is Ru, Rh, or Ir. A main element of the first interposed layer is the same as that of the magnetic coupling layer. A main element of the second interposed layer is different from that of the magnetic coupling layer. A thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of the main element of the first interposed layer. A thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.

First claim

The invention claimed is:

1. A ferromagnetic multilayer film comprising:
a first ferromagnetic layer;
a first interposed layer stacked on the first ferromagnetic layer;
a second interposed layer stacked on the first interposed layer;
a magnetic coupling layer stacked on the second interposed layer; and
a second ferromagnetic layer stacked on the magnetic coupling layer,
wherein the first ferromagnetic layer and the second ferromagnetic layer are magnetically coupled by exchange coupling via the first interposed layer, the second interposed layer, and the magnetic coupling layer such that magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer are antiparallel to each other,
a main element of the magnetic coupling layer is Ru, Rh, or Ir,
a main element of the first interposed layer is the same as the main element of the magnetic coupling layer,
a main element of the second interposed layer is different from the main element of the magnetic coupling layer,
a thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of the main element of the first interposed layer, and
a thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.

2. The ferromagnetic multilayer film according to claim 1 ,
wherein the main element of the second interposed layer is the same as a main element of the first ferromagnetic layer.

3. The ferromagnetic multilayer film according to claim 1 ,
wherein the main element of the second interposed layer is Mo or W.

4. The ferromagnetic multilayer film according to claim 1 ,
wherein the main element of the second interposed layer is Ti, Zr, Pd, Ag, Hf, Pt, or Au.

5. The ferromagnetic multilayer film according to claim 1 ,
wherein a thickness of the first ferromagnetic layer is greater than a thickness of the second ferromagnetic layer.

6. The ferromagnetic multilayer film according to claim 1 , further comprising:
a third interposed layer stacked between the magnetic coupling layer and the second ferromagnetic layer; and
a fourth interposed layer stacked between the third interposed layer and the second ferromagnetic layer,
wherein a main element of the fourth interposed layer is the same as the main element of the magnetic coupling layer,
a main element of the third interposed layer is different from the main element of the magnetic coupling layer,
a thickness of the fourth interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of the main element of the fourth interposed layer, and
a thickness of the third interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the third interposed layer.

7. A magnetoresistive effect element comprising:
the ferromagnetic multilayer film according to claim 1 ;
a non-magnetic spacer layer stacked on the second ferromagnetic layer; and
a magnetization free layer stacked on the non-magnetic spacer layer and formed of a ferromagnetic material,
wherein the first ferromagnetic layer and the second ferromagnetic layer function as magnetization fixed layers.

8. A magnetic sensor comprising:
the magnetoresistive effect element according to claim 7 .

9. A magnetic memory comprising:
the magnetoresistive effect element according to claim 7 .

10. A method of manufacturing the ferromagnetic multilayer film according to claim 1 , the method comprising:
a step of forming the first ferromagnetic layer, the first interposed layer, the second interposed layer, the magnetic coupling layer, and the second ferromagnetic layer in this order on a substrate.

11. The ferromagnetic multilayer film according to claim 2 ,
wherein a thickness of the first ferromagnetic layer is greater than a thickness of the second ferromagnetic layer.

12. The ferromagnetic multilayer film according to claim 2 , further comprising:
a third interposed layer stacked between the magnetic coupling layer and the second ferromagnetic layer; and
a fourth interposed layer stacked between the third interposed layer and the second ferromagnetic layer,
wherein a main element of the fourth interposed layer is the same as the main element of the magnetic coupling layer,
a main element of the third interposed layer is different from the main element of the magnetic coupling layer,
a thickness of the fourth interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of the main clement of the fourth interposed layer, and
a thickness of the third interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the third interposed layer.

13. The ferromagnetic multilayer film according to claim 11 , further comprising:
a third interposed layer stacked between the magnetic coupling layer and the second ferromagnetic layer; and
a fourth interposed layer stacked between the third interposed layer and the second ferromagnetic layer,
wherein a main element of the fourth interposed layer is the same as the main element of the magnetic coupling layer,
a main element of the third interposed layer is different from the main element of the magnetic coupling layer,
a thickness of the fourth interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of the main element of the fourth interposed layer, and
a thickness of the third interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the third interposed layer.

14. A magnetoresistive effect element comprising:
the ferromagnetic multilayer film according to claim 2 ;
a non-magnetic spacer layer stacked on the second ferromagnetic layer; and
a magnetization free layer stacked on the non-magnetic spacer layer and formed of a ferromagnetic material,
wherein the first ferromagnetic layer and the second ferromagnetic layer function as magnetization fixed layers.

15. A magnetoresistive effect element comprising:
the ferromagnetic multilayer film according to claim 3 ;
a non-magnetic spacer layer stacked on the second ferromagnetic layer; and
a magnetization free layer stacked on the non-magnetic spacer layer and formed of a ferromagnetic material,
wherein the first ferromagnetic layer and the second ferromagnetic layer function as magnetization fixed layers.

16. A magnetoresistive effect element comprising:
the ferromagnetic multilayer film according to claim 4 ;
a non-magnetic spacer layer stacked on the second ferromagnetic layer; and
a magnetization free layer stacked on the non-magnetic spacer layer and formed of a ferromagnetic material,
wherein the first ferromagnetic layer and the second ferromagnetic layer function as magnetization fixed layers.

17. A magnetoresistive effect element comprising:
the ferromagnetic multilayer film according to claim 5 ;
a non-magnetic spacer layer stacked on the second ferromagnetic layer; and
a magnetization free layer stacked on the non-magnetic spacer layer and formed of a ferromagnetic material,
wherein the first ferromagnetic layer and the second ferromagnetic layer function as magnetization fixed layers.

18. A magnetoresistive effect element comprising:
the ferromagnetic multilayer film according to claim 11 ;
a non-magnetic spacer layer stacked on the second ferromagnetic layer; and
a magnetization free layer stacked on the non-magnetic spacer layer an

Assignees

• Tdk Corp

Inventors

• Sasaki Tomoyuki
• Tanaka Yoshitomo

Classifications

• G01R33/093 Primary

  using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• G01R33/098

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title

• H01L43/08

  Electricity · mapped topic

• H01L43/12

  Electricity · mapped topic