Plasmonic avalanche photodetection

Patent metadata

Field	Value
Publication number	US-10612971-B2
Application number	US-201415316621-A
Country	US
Kind code	B2
Filing date	Jul 28, 2014
Priority date	Jul 28, 2014
Publication date	Apr 7, 2020
Grant date	Apr 7, 2020

Abstract

Plasmonic avalanche photodetection employs an optical antenna and an avalanche photodiode (APD) coupled to the optical antenna. Hot carriers generated by light incident on the optical antenna are received in an avalanche multiplication region of the APD where avalanche multiplication of the hot carriers is provided.

First claim

What is claimed is:

1. A plasmonic avalanche photodetector comprising:
an optical antenna to absorb incident light and to generate hot electron-hole pairs by plasmon decay of a plasmon resonance of the optical antenna; and
an avalanche photodiode (APD) having an avalanche multiplication region coupled to the optical antenna, the APD to receive hot carriers of the hot electron-hole pairs emitted into the avalanche multiplication region from the coupled optical antenna and to produce an amplified photocurrent through avalanche multiplication of the received hot carriers.

2. The plasmonic avalanche photodetector of claim 1 , wherein the avalanche multiplication region of the APD is coupled to the optical antenna by a Schottky junction between the optical antenna and the APD, the hot carriers to be emitted into the avalanche multiplication region across a Schottky barrier of the Schottky junction.

3. The plasmonic avalanche photodetector of claim 2 , wherein the absorbed incident light has a photon energy that is below a band gap of a semiconductor of the APD avalanche multiplication region and above an energy level that facilitates crossing the Schottky barrier of the Schottky junction to provide plasmonically driven internal photoemission of the hot carriers across the Schottky junction and into the APD avalanche multiplication region.

4. The plasmonic avalanche photodetector of claim 2 , wherein the Schottky junction comprises a metal-semiconductor junction between a metal of the optical antenna and a semiconductor of the APD avalanche multiplication region.

5. The plasmonic avalanche photodetector of claim 4 , wherein the Schottky junction further comprises a layer of titanium at an interface between the optical antenna metal and the APD avalanche multiplication region semiconductor, the titanium layer having a thickness less than or equal to about one nanometer, and wherein the optical antenna metal comprises one or more of gold, silver, copper, and aluminum.

6. The plasmonic avalanche photodetector of claim 1 , wherein the optical antenna comprises one or more of a nanoparticle optical antenna, a nanorod optical antenna, an optical dimer antenna, and a bowtie optical antenna.

7. The plasmonic avalanche photodetector of claim 1 , wherein the APD comprises a lateral p-i-n APD.

8. The plasmonic avalanche photodetector of claim 1 , wherein the avalanche multiplication region of the APD comprises silicon, and wherein the optical antenna is to absorb incident light having a wavelength between about 1200 nanometers and about 1700 nanometers.

9. A plasmonic avalanche photodetection system comprising the plasmonic avalanche photodetector of claim 1 and further comprising:
a first voltage source to reverse bias a semiconductor junction of the APD and to facilitate avalanche multiplication by impact ionization within the avalanche multiplication region of the APD; and
a second voltage source to separate hot carriers from the generated hot electron-hole pairs, the hot carriers to move into the APD under the influence of an electric field of the second voltage source.

10. The plasmonic avalanche photodetector of claim 1 , wherein the APD comprises an all-silicon APD.

11. The plasmonic avalanche photodetector of claim 1 , wherein the optical antenna is a bowtie optical antenna comprising two antenna elements separated by a gap, each antenna element having a first end adjacent to the gap having a first width and a second end opposite the first end having a second width greater than the first width, such that the width of each antenna element increases along a length of the antenna element from the first end to the second end.

12. A plasmonic avalanche photodetection system comprising:
an avalanche photodiode (APD), a semiconductor of the APD having a band gap;
an optical antenna coupled to the APD by a Schottky junction, hot carriers generated by light incident on the optical antenna to be emitted into an avalanche multiplication region of the APD across the Schottky junction by internal photoemission;
a first voltage source to reverse bias a semiconductor junction of the APD and to facilitate avalanche multiplication by impact ionization within the avalanche multiplication region of the APD; and
a second voltage source to reverse bias the Schottky junction and to induce movement of the hot carriers across a Schottky barrier of the Schottky junction.

13. The plasmonic avalanche photodetection system of claim 12 , wherein the Schottky junction comprises a layer of titanium sandwiched between a metal of the optical antenna and the APD semiconductor.

14. The plasmonic avalanche photodetection system of claim 13 , wherein the APD semiconductor comprises silicon and the optical antenna metal comprises one or more of gold, silver, copper and aluminum.

15. The plasmonic avalanche photodetection system of claim 12 , wherein a photon energy of the incident light is less than the semiconductor band gap and greater than a Schottky barrier energy of the Schottky junction.

16. The plasmonic avalanche photodetection system of claim 12 , further comprising a heater to heat the Schottky junction and to increase a probability of thermo-ionic hot carrier emission over the Schottky barrier.

17. The plasmonic avalanche photodetection system of claim 12 , wherein the APD comprises an all-silicon APD.

18. A method of plasmonic avalanche photodetection, the method comprising:
absorbing incident light using an optical antenna, the absorbed incident light inducing a plasmon resonance of the optical antenna;
generating hot electron-hole pairs by plasmon decay of the plasmon resonance induced by the absorbed incident light;
emitting hot carriers of the hot electron-hole pairs into an avalanche multiplication region of an avalanche photodiode (APD) coupled to the optical antenna; and
providing avalanche multiplication of the emitted hot carriers within the avalanche multiplication region of the APD to produce an amplified photocurrent in the APD.

19. The method of plasmonic avalanche photodetection of claim 18 , wherein the APD comprises an all-silicon APD.

20. The method of plasmonic avalanche photodetection of claim 18 , wherein the optical antenna is a bowtie optical antenna comprising two antenna elements separated by a gap, each antenna element having a first end adjacent to the gap having a first width and a second end opposite the first end having a second width greater than the first width, such that the width of each antenna element increases along a length of the antenna element from the first end to the second end.

Assignees

• Hewlett Packard Entpr Dev Lp

Inventors

• Huang Zhihong
• Liang Di
• Santori Charles M

Classifications

• G01J1/44 Primary

  Electric circuits {(for command of an exposure part G03B7/02)} · CPC title

• G01J1/0407

  Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings · CPC title

• G01J2001/4466

  Avalanche · CPC title

• H01L31/107

  Electricity · mapped topic

• H01L31/101

  Electricity · mapped topic