Solid-state imaging device to improve photoelectric efficiency

US10608050B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10608050-B2
Application numberUS-201615756102-A
CountryUS
Kind codeB2
Filing dateAug 3, 2016
Priority dateSep 16, 2015
Publication dateMar 31, 2020
Grant dateMar 31, 2020

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.

First claim

Opening claim text (preview).

The invention claimed is: 1. A solid-state imaging device, comprising: a first electrode; a second electrode; a photoelectric conversion film between the first electrode and the second electrode, wherein the photoelectric conversion film is a co-deposited film that includes an organic semiconductor and an inorganic material, and a volume ratio of the inorganic material in the co-deposited film is one of 70% or more or 30% or less; and an insulating layer between the first electrode and the photoelectric conversion film, wherein the insulating layer is directly stacked on a portion of the first electrode. 2. The solid-state imaging device according to claim 1 , wherein the inorganic material has a light transmittance in a visible range, the light transmittance is at least 70%, the organic semiconductor has a light absorption rate in the visible range, and the light absorption rate is less than 30%. 3. The solid-state imaging device according to claim 1 , wherein the inorganic material has a bandgap energy of 3 eV or more. 4. The solid-state imaging device according to claim 1 , wherein the inorganic material comprises zinc sulfide (ZnS). 5. The solid-state imaging device according to claim 1 , wherein the inorganic material comprises titanium oxide (TiO2). 6. The solid-state imaging device according to claim 1 , wherein the organic semiconductor and the inorganic material are alternately and repetitively laminated in the photoelectric conversion film. 7. The solid-state imaging device according to claim 1 , wherein the organic semiconductor includes at least one of quinacridone, a quinacridone derivative, subphthalocyanine, or a subphthalocyanine derivative. 8. The solid-state imaging device according to claim 1 , further comprising: a first element substrate including the photoelectric conversion film; and a second element substrate including a signal processing circuit configured to signal process an electric signal that is photoelectrically converted in the photoelectric conversion film, wherein the first element substrate and the second element substrate are laminated. 9. The solid-state imaging device according to claim 1 , further comprising: a semiconductor substrate that includes at least one photoelectric conversion element, wherein the first electrode, the photoelectric conversion film, and the second electrode are on the semiconductor substrate.

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10608050B2 cover?
A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.
Who is the assignee on this patent?
Sony Semiconductor Solutions Corp
What technology area does this patent fall under?
Primary CPC classification H01L27/307. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 31 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).