Resist composition and method of forming resist pattern

Patent metadata

Field	Value
Publication number	US-10606174-B2
Application number	US-201815877764-A
Country	US
Kind code	B2
Filing date	Jan 23, 2018
Priority date	Jan 25, 2017
Publication date	Mar 31, 2020
Grant date	Mar 31, 2020

Abstract

A resist composition including a polymeric compound having a structural unit derived from a compound represented by general formula (a0-1), an onium salt having an anion moiety with a specific structure, and a photodecomposable base which is decomposed upon exposure and then loses the ability of controlling of acid diffusion. In formula (a0-1), Ra x0 represents a polymerizable group-containing group; Wa x0 represents an aromatic hydrocarbon group having a valency of (n ax0 +1), provided that Ra x0 and Wa x0 may together form a condensed ring structure; n ax0 represents an integer of 1 to 3; Ya x01 represents a carbonyl group or a single bond; Ra x01 represents a hydrogen atom or a hydrocarbon group which may have a substituent.

First claim

What is claimed is:

1. A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition comprising:
a polymeric compound (A1) comprising a structural unit derived from a compound represented by general formula (a0-1) shown below,
an acid generator (B1) represented by general formula (b1) shown below, and
a photodecomposable base (D1) which is decomposed upon exposure and then loses the ability to control acid diffusion:

wherein Ra x0 represents a polymerizable group-containing group; Wa x0 represents an aromatic hydrocarbon group having a valency of (n ax0 +1), provided that Ra x0 and Wa x0 may together form a condensed ring structure; n ax0 represents an integer of 1 to 3; Ya x01 represents a carbonyl group or a single bond; Ra x01 represents a hydrogen atom or a hydrocarbon group which may have a substituent; R 101 represents a cyclic group which may have a substituent, a chain alkyl group which may have a substituent or a chain alkenyl group which may have a substituent; R 102 represents a fluorine atom or a fluorinated alkyl group having 1 to 5 carbon atoms; Y 101 represents a single bond or a divalent group containing an oxygen atom; V 101 represents an alkylene group, a fluorinated alkylene group or a single bond; m represents an integer of 1 or more, and M′ m+ represents an onium cation having a valency of m.

2. The resist composition according to claim 1 , wherein the photodecomposable base (D1) comprises at least one compound selected from the group consisting of a compound represented by general formula (d1-1) shown below, a compound represented by general formula (d1-2) shown below and a compound represented by general formula (d1-3) shown below:

wherein Rd 1 to Rd 4 each independently represents a cyclic group which may have a substituent, a chain alkyl group which may have a substituent or a chain alkenyl group which may have a substituent, provided that, the carbon atom adjacent to the sulfur atom within the Rd 2 in the formula (d1-2) has no fluorine atom bonded thereto; Yd 1 represents a single bond or a divalent linking group; m represents an integer of 1 or more; and each M m+ independently represents an organic cation having a valency of m.

3. The resist composition according to claim 1 , wherein M′ m+ in general formula (b1) is an onium cation represented by general formula (b1-ca-1) shown below:

wherein R b11 represents an aryl group which has a fluorinated alkyl group or a fluorine atom as a substituent, an alkyl group which may have a fluorinated alkyl group or a fluorine atom as a substituent, or an alkenyl group which may have a fluorinated alkyl group or a fluorine atom as a substituent; R b12 and R b13 each independently represents an aryl group which may have a substituent, an alkyl group which may have a substituent, or an alkenyl group which may have a substituent, provided that R b11 to R b13 may be mutually bonded to form a ring with the sulfur atom.

4. The resist composition according to claim 1 , wherein the polymeric compound (A1) further comprises a structural unit represented by general formula (a10-1) shown below:

wherein Ra x1 represents a polymerizable group-containing group; Wa x1 represents an aromatic hydrocarbon group having a valency of (n ax1 +1), provided that Ra x1 and Wa x1 may together form a condensed ring structure; and n ax1 represents an integer of 1 to 3.

5. The resist composition according to claim 2 , wherein the polymeric compound (A1) further comprises a structural unit represented by general formula (a10-1) shown below:

wherein Ra x1 represents a polymerizable group-containing group; Wa x1 represents an aromatic hydrocarbon group having a valency of (n ax1 +1), provided that Ra x1 and Wa x1 may together form a condensed ring structure; and n ax1 represents an integer of 1 to 3.

6. The resist composition according to claim 3 , wherein the polymeric compound (A1) further comprises a structural unit represented by general formula (a10-1) shown below:

wherein Ra x1 represents a polymerizable group-containing group; Wa x1 represents an aromatic hydrocarbon group having a valency of (n ax1 +1), provided that Ra x1 and Wa x1 may together form a condensed ring structure; and n ax1 represents an integer of 1 to 3.

7. A method of forming a resist pattern, comprising:
forming a resist film with the resist composition according to claim 1 ;
exposing the resist film; and
developing the exposed resist film to form a resist pattern.

8. A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition comprising:
a base component (A′) which exhibits changed solubility in a developing solution under action of acid; and
a fluorine additive component (F′) which exhibits decomposability to an alkali developing solution,
wherein the base component (A′) comprises a polymeric compound (A1′) comprising a structural unit derived from a compound represented by general formula (a0-1) shown below, and
the fluorine additive component (F′) comprises a fluorine resin component (F1′) comprising a structural unit (f1′) containing a base dissociable group:

 wherein Ra x0 represents a polymerizable group-containing group; Wa x0 represents an aromatic hydrocarbon group having a valency of (n ax0 +1), provided that Ra x0 and Wa x0 may together form a condensed ring structure; n ax0 represents an integer of 1 to 3; Ya x01 represents a carbonyl group or a single bond; and Ra x01 represents a hydrogen atom or a hydrocarbon group which may have a substituent.

9. The resist composition according to claim 8 , wherein the structural unit (f1′) is a structural unit represented by general formula (f1′-1) shown below or a structural unit represented by general formula (f1′-2) shown below:

wherein each R independently represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; X represents a divalent linking group having no acid dissociable portion; A aryl represents a divalent aromatic cyclic group which may have a substituent; X 01 represents a single bond or a divalent linking group; and each R 2 independently represents an organic group having a fluorine atom.

10. The resist composition according to claim 8 , wherein the amount of the fluorine resin component (F1′) relative to 100 parts by weight of the component (A′) is 0.5 to 10 parts by weight.

11. The resist composition according to claim 8 , further comprising a photodecomposable base (D1) which is decomposed upon exposure and then loses the ability of controlling of acid diffusion.

12. The resist composition according to claim 8 , wherein the polymeric

Assignees

• Tokyo Ohka Kogyo Co Ltd

Inventors

• Yahagi Masahito
• Yamazaki Hiroto
• Suzuki Kenta

Classifications

• G03F7/0397 Primary

  the macromolecular compound having an alicyclic moiety in a side chain · CPC title

• G03F7/0045

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• G03F7/0381 Primary

  using a combination of a phenolic resin and a polyoxyethylene resin · CPC title

• G03F7/32

  Liquid compositions therefor, e.g. developers · CPC title

• G03F7/0382

  the macromolecular compound being present in a chemically amplified negative photoresist composition · CPC title