Pressure sensor

US10605679B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10605679-B2
Application numberUS-201716336379-A
CountryUS
Kind codeB2
Filing dateAug 29, 2017
Priority dateOct 13, 2016
Publication dateMar 31, 2020
Grant dateMar 31, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A pressure sensor is disclosed. The pressure sensor includes a common electrode, sensitized electrodes, mountain-shaped pressure-sensitive layers, and thin-film transistors. The common electrode is formed as a layer. The sensitized electrodes are arranged in a matrix opposing the common electrode. The mountain-shaped pressure-sensitive layers are respectively formed over the sensitized electrodes on a side close to the common electrode. The thin-film transistors are disposed to correspond to the sensitized electrodes on sides of the sensitized electrodes opposite to the common electrode. A distance between the sensitized electrodes and an outer edge of a contact surface at which the common electrode and the mountain-shaped pressure-sensitive layers contact gradually becomes narrower when, due to pressing force applied to the common electrode toward the mountain-shaped pressure-sensitive layers and the sensitized electrodes, the contact surface expands outward from central portions of the mountain-shaped pressure-sensitive layers when viewed in plan.

First claim

Opening claim text (preview).

The invention claimed is: 1. A pressure sensor comprising: a common electrode formed as a layer; a plurality of sensitized electrodes arranged in a matrix opposing the common electrode; a plurality of mountain-shaped pressure-sensitive layers respectively formed over the plurality of sensitized electrodes on a side close to the common electrode; and a plurality of thin-film transistors disposed to correspond to the plurality of sensitized electrodes on sides of the sensitized electrodes opposite to the common electrode, where one or two or more adjacent thin-film transistors are connected to one sensitized electrode, wherein a distance between the sensitized electrodes and an outer edge of a contact surface at which the common electrode and the mountain-shaped pressure-sensitive layers contact gradually becomes narrower when, due to pressing force applied to the common electrode toward the mountain-shaped pressure-sensitive layers and the sensitized electrodes, the contact surface expands outward from central portions of the mountain-shaped pressure-sensitive layers when viewed in plan. 2. The pressure sensor according to claim 1 , wherein the sensitized electrode has a diameter that is 30% or more with respect to the diameter of the mountain-shaped pressure-sensitive layer. 3. The pressure sensor according to claim 2 , wherein the sensitized electrode has a diameter that is 50% or more with respect to the diameter of the mountain-shaped pressure-sensitive layer. 4. The pressure sensor according to claim 3 , wherein the sensitized electrode has a diameter that extends to a vicinity of an outer edge of a contact surface at which the common electrode and the mountain-shaped pressure-sensitive layer are configured to contact each other with a largest area. 5. The pressure sensor according to claim 1 , wherein the sensitized electrode is completely covered by the mountain-shaped pressure-sensitive layer. 6. The pressure sensor according to claim 1 , further comprising: an insulating substrate disposed on the common electrode on a side opposite to the plurality of sensitized electrodes, wherein the insulating substrate and the common electrode are elastic.

Assignees

Inventors

Classifications

  • G01L1/205Primary

    using distributed sensing elements · CPC title

  • Force sensors associated with force applying means (G01L5/0052, G01L5/0057, G01L5/0061 take precedence) · CPC title

  • of the semi-conductor type · CPC title

  • G01L1/20Primary

    by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids (of piezo-resistive materials G01L1/18); by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress · CPC title

  • Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes · CPC title

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What does patent US10605679B2 cover?
A pressure sensor is disclosed. The pressure sensor includes a common electrode, sensitized electrodes, mountain-shaped pressure-sensitive layers, and thin-film transistors. The common electrode is formed as a layer. The sensitized electrodes are arranged in a matrix opposing the common electrode. The mountain-shaped pressure-sensitive layers are respectively formed over the sensitized electrod…
Who is the assignee on this patent?
Nissha Co Ltd
What technology area does this patent fall under?
Primary CPC classification G01L1/205. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Mar 31 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).