Method for inspecting photoresist pattern
US-2017103924-A1 · Apr 13, 2017 · US
US10604859B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10604859-B2 |
| Application number | US-201715696732-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 6, 2017 |
| Priority date | Sep 27, 2016 |
| Publication date | Mar 31, 2020 |
| Grant date | Mar 31, 2020 |
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A method for forming a pattern in which a plating layer is selectively formed on a base material using a resin layer as a mask, includes resin layer-forming in which the resin layer is formed on the base material; and patterning in which the resin layer is selectively removed, in which in the patterning, a part of the resin layer is sublimed by heating to be removed.
Opening claim text (preview).
What is claimed is: 1. A method for forming a pattern in which a plating layer is selectively formed on a base material using a resin layer as a mask, the method comprising: forming a primer layer on the base material; forming the resin layer on the primer layer; patterning the resin layer by selectively removing a part by of the resin layer, wherein the part of the resin layer is sublimed by heating to be removed; and inspecting the patterned resin layer based on a fluorescence of the patterned resin layer, wherein the primer layer includes a π bond (pi bond); wherein the resin layer comprises at least one of anthracene or naphthacene; and wherein the primer layer comprises at least one of phenyltrimethoxysilane or vinyltrimethoxysilane. 2. The method for forming a pattern according to claim 1 , further comprising partially heating the resin layer with an infrared ray to pattern the resin layer. 3. The method for forming a pattern according to claim 2 , wherein the infrared ray is a laser beam. 4. The method for forming a pattern according to claim 1 , wherein the resin layer is configured to fluoresce when irradiated with an inspection irradiation. 5. The method for forming a pattern according to claim 4 , wherein the resin layer is an acene having a molecular weight of 150 or more and 300 or less. 6. The method for forming a pattern according to claim 5 , further comprising: wherein the primer layer having a π bond enhances an adhesion between the base material and the resin layer on the base material, before forming the resin layer. 7. The method for forming a pattern according to claim 1 , further comprising: plating a part of the base material from which the resin has been removed to form the plating layer, after the resin layer. 8. A method for manufacturing an ornament to which the method for forming a pattern according to claim 1 is applied. 9. A method for manufacturing an ornament to which the method for forming a pattern according to claim 2 is applied. 10. A method for manufacturing an ornament to which the method for forming a pattern according to claim 3 is applied. 11. A method for manufacturing an ornament to which the method for forming a pattern according to claim 4 is applied. 12. A method for manufacturing an ornament to which the method for forming a pattern according to claim 5 is applied. 13. A method for manufacturing an ornament to which the method for forming a pattern according to claim 6 is applied. 14. A method for manufacturing an ornament to which the method for forming a pattern according to claim 7 is applied. 15. A method for manufacturing a belt for a wristwatch to which the method for forming a pattern according to claim 1 is applied. 16. A method for manufacturing a structure for mounting wiring to which the method for forming a pattern according to claim 1 is applied. 17. A method for manufacturing a semiconductor device to which the method for forming a pattern according to claim 1 is applied. 18. A method for manufacturing a printed circuit board to which the method for forming a pattern according to claim 1 is applied.
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