Simple approach for preparing post-treatment-free solution processed non-stoichiometric NiOx nanoparticles as conductive hole transport materials

Patent metadata

Field	Value
Publication number	US-10604419-B2
Application number	US-201916392329-A
Country	US
Kind code	B2
Filing date	Apr 23, 2019
Priority date	Oct 14, 2015
Publication date	Mar 31, 2020
Grant date	Mar 31, 2020

Abstract

High-quality noN-stoichiometric NiO x nanoparticles are synthesized by a facile chemical precipitation method. The NiO x film can function as an effective p-type semiconductor or hole transport layer (HTL) without any post-treatments, while offering wide temperature applicability from room-temperature to 150° C. For demonstrating the potential applications, high efficiency is achieved in organic solar cells using NiO x HTL. Better performance in NiO x based organic light emitting diodes is obtained as compared to devices using PEDOT:PSS. The solution-processed NiO x semiconductors at room temperature can favor a wide-range of applications of large-area and flexible optoelectronics.

First claim

What is claimed is:

1. A non-stoichiometric NiO x nanoparticle film, wherein the non-stoichiometric NiO x nanoparticle film is produced by using non-stoichiometric NiO x nanoparticles prepared by a method comprising the steps of:
using a base to react with Ni ions in water without added heat to form an electrically insulated and undispersed intermediate;
grinding the intermediate to form it into a uniform grain size;
combusting the intermediate in air at a temperature of 270° C. to cause oxygen to interact with a nickel-deficient lattice and further form the non- stoichiometric NiO x nanoparticles,
wherein the NiO x nanoparticle film is formed through a room temperature solution process without any post-treatment and possesses typical p-type semiconductor properties.

2. The non-stoichiometric NiO x nanoparticle film of claim 1 , wherein the NiO x nanoparticle film has a work function of 5.25 eV.

3. The non-stoichiometric NiO x nanoparticle film of claim 2 , wherein the NiO x nanoparticle film is transparent and is placed on an ITO/glass substrate and has an optical transparency of at least 85% when the film has a thickness of 30 nm.

4. The non-stoichiometric NiO x nanoparticle film of claim 1 , wherein the NiO x nanoparticle film comprises NiO (Ni 2+ ), NiOOH (Ni 3+ ), and Ni 2 O 3 (Ni 3+ ).

Assignees

• Univ Hong Kong

Inventors

• Choy Wallace C H
• Jiang Fei

Classifications

• C01P2006/40

  Electric properties · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• C01G53/04 Primary

  Oxides · CPC title

• C01P2002/85

  by XPS, EDX or EDAX data · CPC title

• C01P2006/60

  Optical properties, e.g. expressed in CIELAB-values · CPC title