Electromagnetic wave radiator

Patent metadata

Field	Value
Publication number	US-10601140-B2
Application number	US-201815875526-A
Country	US
Kind code	B2
Filing date	Jan 19, 2018
Priority date	Jan 19, 2017
Publication date	Mar 24, 2020
Grant date	Mar 24, 2020

Abstract

An electromagnetic wave radiator may include: a first metal layer; a plurality of metal side walls vertically protruding along an edge of the first metal layer; and a second metal layer suspended over the first metal layer. The second metal layer includes a plurality of ports radially extending from edges of the second metal layer and a plurality of slots penetrating the second metal layer in a radial direction.

First claim

What is claimed is:

1. An electromagnetic wave radiator comprising:
a first metal layer;
a plurality of metal side walls vertically protruding along an edge of the first metal layer; and
a second metal layer suspended over the first metal layer,
wherein the second metal layer comprises a plurality of ports extending radially from edges of the second metal layer and a plurality of slots penetrating the second metal layer and extending radially from a center portion of the second metal layer to edge portions of the second metal layer,
wherein each metal side wall from among the plurality of metal side walls extends from an edge of a first respective port from among the plurality of ports to an edge of a second respective port from among the plurality of ports.

2. The electromagnetic wave radiator of claim 1 , wherein every pair of adjacent metal side walls of the plurality of metal side walls is spaced apart from each other, and each port of the plurality of ports is disposed to pass through a gap between a corresponding pair of adjacent metal side walls.

3. The electromagnetic wave radiator of claim 1 , wherein the first metal layer and the second metal layer have an identical regular polygonal shape,
wherein each metal side wall of the plurality of metal side walls is disposed perpendicular to an upper surface of the first metal layer at the edge of one side of the identical regular polygonal shape of the first metal layer,
wherein a first length of the each metal side wall of the plurality of metal side walls is less than a second length of the one side of the first metal layer, and
wherein a gap between two adjacent metal side walls is disposed at a vertex of the identical regular polygonal shape of the first metal layer.

4. The electromagnetic wave radiator of claim 3 , wherein the plurality of ports radially protrude from respective vertices of the identical regular polygonal shape of the second metal layer, and the plurality of slots are disposed between a center of the second metal layer and the respective vertices of the identical regular polygonal shape of the second metal layer.

5. The electromagnetic wave radiator of claim 1 , wherein the first metal layer and the second metal layer have an identical circular shape,
wherein each metal side wall of the plurality of metal side walls is disposed perpendicular to an upper surface of the first metal layer at the edge of the first metal layer,
wherein the edge of the first metal layer corresponds to a perimeter of the identical circular shape of the first metal layer,
wherein a combined length of the plurality of metal side walls is less than a diameter of the identical circular shape of the first metal layer, and
wherein a plurality of gaps between the plurality of metal side walls are disposed at regular intervals along the perimeter of the identical circular shape of the first metal layer.

6. The electromagnetic wave radiator of claim 5 , wherein each of the plurality of ports protrudes in the radial direction of the second metal layer between the plurality of gaps between the plurality of metal side walls.

7. The electromagnetic wave radiator of claim 1 , wherein the second metal layer is disposed in a space surrounded by the plurality of metal side walls.

8. The electromagnetic wave radiator of claim 1 , wherein the second metal layer further comprises an opening penetrating through a central region of the second metal layer.

9. The electromagnetic wave radiator of claim 1 , further comprising at least one oscillator configured to provide a signal to each of the plurality of ports, wherein the at least one oscillator is configured so that signals provided to the plurality of ports have an identical amplitude and different phases from each other, and phase differences between signals applied to two adjacent ports are identical.

10. The electromagnetic wave radiator of claim 9 , wherein the second metal layer has n ports, and a phase of the signal applied to the an m-th port is 2mπ/n, where n is a natural number and m is 0, 1, . . . , n−1.

11. The electromagnetic wave radiator of claim 9 , wherein the at least one oscillator is connected to the plurality of ports in a one-to-one manner.

12. The electromagnetic wave radiator of claim 9 , wherein one oscillator of the at least one oscillator is connected to the plurality of ports via a plurality of wires and each of the plurality of wires has an electrical length providing a different phase delay from each other.

13. The electromagnetic wave radiator of claim 1 , wherein a space surrounded by the first metal layer, the plurality of metal side walls, and the second metal layer defines a cavity for resonance of an electromagnetic wave.

14. The electromagnetic wave radiator of claim 1 , further comprising a plurality of amplification circuits between two adjacent ports of the plurality of ports, wherein the plurality of amplification circuits are disposed in a loop shape between the plurality of ports.

15. The electromagnetic wave radiator of claim 14 , each of the plurality of amplification circuits comprises an input matching unit, an inter-stage matching unit, an output matching unit, a first common emitter transistor between the input matching unit and the inter-stage matching unit, and a second common emitter transistor between the inter-stage matching unit and the output matching unit.

16. The electromagnetic wave radiator of claim 15 , wherein the first common emitter transistor and the second common emitter transistor have an identical voltage gain.

17. The electromagnetic wave radiator of claim 14 , port impedances for the plurality of ports are identical to each other, and port admittances for the plurality of ports are identical to each other.

18. The electromagnetic wave radiator of claim 17 , each of the port admittances has a negative resistance offsetting a cavity load impedance at a resonant frequency, and a total admittance of the electromagnetic wave radiator has a negative real part at the resonant frequency.

19. The electromagnetic wave radiator of claim 1 , wherein the electromagnetic wave radiator is configured to radiate a circularly-polarized millimeter-wave/terahertz (THz) wave.

20. An electromagnetic wave radiator array comprising a plurality of two-dimensionally arranged electromagnetic wave radiators, wherein each electromagnetic wave radiator of the plurality of two-dimensionally arranged electromagnetic wave radiators comprises:
a first metal layer;
a plurality of metal side walls vertically protruding along an edge of the first metal layer; and
a second metal layer suspended over the first metal layer,
wherein the second metal layer comprises a plurality of ports radially extending from the edge of the second metal layer and a plurality of slots penetrating the second metal layer and extending radially from a center portion of the second metal layer to edge portions of the second metal layer,
wherein each metal side wall from among the plurality of metal side walls extends from an edge of a first respective port from among the plurality of ports to an edge of a second respective port from among the plurality of ports.

21. The electromagnetic wave radiator of claim 1 , wherein each slot from among the plurality of slots is positioned between a respective portion of the second metal layer and the center portion of the second metal layer.

22. The electromagnetic wave radiator of claim 20 , wherein each slot from among the plurality of s

Assignees

• Samsung Electronics Co Ltd
• Univ California

Inventors

• Baik Chanwook
• Heydari Payam
• Nazari Peyman

Classifications

• H03F3/19

  with semiconductor devices only · CPC title

• H03F3/60

  Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators (H03F3/54 takes precedence) · CPC title

• H03F2200/387

  A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier · CPC title

• H01Q3/443

  varying the phase velocity along a leaky transmission line (frequency scanning H01Q3/22; non-resonant leaky-waveguide or transmission-line aerials H01Q13/20) · CPC title

• H03F2200/222

  A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier · CPC title