Self-assembly of nanostructures

US10600965B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10600965-B2
Application numberUS-201715488762-A
CountryUS
Kind codeB2
Filing dateApr 17, 2017
Priority dateOct 20, 2016
Publication dateMar 24, 2020
Grant dateMar 24, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Structures and methods that include selective electrostatic placement based on a dipole-to-dipole interaction of electron-rich carbon nanotubes onto an electron-deficient pre-patterned surface. The structure includes a substrate with a first surface having a first isoelectric point and at least one additional surface having a second isoelectric point. A self-assembled monolayer is selectively formed on the first surface and includes an electron deficient compound including a deprotonated pendant hydroxamic acid or a pendant phosphonic acid group or a pendant catechol group bound to the first surface. An organic solvent can be used to deposit the electron rich carbon nanotubes on the self-assembled monolayer.

First claim

Opening claim text (preview).

What is claimed is: 1. A precursor for making a self-assembled monolayer on a substrate, the precursor comprising: an electron deficient compound including a first functional group selective to anchor the monolayer to a surface on the substrate, wherein the first functional group comprises a catechol, wherein the surface has an isoelectric point greater than a pKa of the catechol, wherein the electron deficient compound comprising the catechol is of the formula: wherein R is an electron withdrawing group, n is an integer from 1 to 12, and X is the catechol, wherein the electron withdrawing group comprises a fluorine group, a nitro group, a cyano group or mixtures thereof when X is the catechol. 2. The precursor of claim 1 , wherein the surface comprises a metal oxide or metal nitride. 3. The precursor of claim 2 , wherein the metal oxide includes at least one metal from group IVB, VB, VIB, VIIB, VIII or IIA (CAS version) of the Periodic Table of the Elements. 4. The precursor of claim 2 , wherein the metal oxide comprises aluminum oxide (Al 2 O 3 ), a hafnium oxide (HfO 2 ), a titanium oxide (TiO x ), or a zinc oxide (ZnO). 5. The precursor of claim 2 , wherein the metal nitride comprises titanium nitride or silicon nitride.

Assignees

Inventors

Classifications

  • Nanotubes · CPC title

  • Dihydroxy benzenes; Alkylated derivatives thereof · CPC title

  • After-treatment · CPC title

  • C07F9/3808Primary

    Acyclic saturated acids which can have further substituents on alkyl · CPC title

  • Preparation · CPC title

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What does patent US10600965B2 cover?
Structures and methods that include selective electrostatic placement based on a dipole-to-dipole interaction of electron-rich carbon nanotubes onto an electron-deficient pre-patterned surface. The structure includes a substrate with a first surface having a first isoelectric point and at least one additional surface having a second isoelectric point. A self-assembled monolayer is selectively f…
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification C07F9/3808. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Mar 24 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).