Semiconductor module having a grooved clip frame

US10600725B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10600725-B2
Application numberUS-201816093037-A
CountryUS
Kind codeB2
Filing dateMay 29, 2018
Priority dateMay 29, 2018
Publication dateMar 24, 2020
Grant dateMar 24, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A semiconductor module includes a die pad frame; a semiconductor chip disposed in a chip region on an upper surface of the die pad frame, a conductive connection member for die pad disposed between the second electrode of the semiconductor chip and the upper surface of the die pad frame, the conductive connection member for die pad electrically connecting the second electrode of the semiconductor chip and the upper surface of the die pad frame; a first clip frame disposed on the upper surface of the semiconductor chip; a first clip conductive connection member disposed between the first electrode on the semiconductor chip and a lower surface of the first clip frame, the first clip conductive connection member electrically connecting the first electrode of the semiconductor chip and the lower surface of the first clip frame; and a sealing resin.

First claim

Opening claim text (preview).

The invention claimed is: 1. A semiconductor module comprising: a die pad frame; a semiconductor chip disposed in a chip region on an upper surface of the die pad frame, the semiconductor chip having an upper surface on which a first electrode is disposed and a lower surface on which a second electrode is disposed; a conductive connection member for die pad disposed between the second electrode of the semiconductor chip and the upper surface of the die pad frame, the conductive connection member for die pad electrically connecting the second electrode of the semiconductor chip and the upper surface of the die pad frame; a first clip frame disposed on the upper surface of the semiconductor chip; a first clip conductive connection member disposed between the first electrode on the semiconductor chip and a lower surface of the first clip frame, the first clip conductive connection member electrically connecting the first electrode of the semiconductor chip and the lower surface of the first clip frame; and a sealing resin for sealing the semiconductor chip, the die pad frame, the first clip frame, the first clip conductive connection member, and the conductive connection member for die pad, wherein a clip locking part is disposed at an end portion of an upper surface of the first clip frame, the clip locking part being partially above the upper surface of the first clip frame so as to be away from the upper surface of the semiconductor chip, and wherein a groove is formed on a lower surface of the clip locking part. 2. The semiconductor module according to claim 1 , wherein a cross section of the groove perpendicularly taken relative to a length direction of the groove, along which the groove extends on the lower surface of the clip locking part, has a V shape. 3. The semiconductor module according to claim 2 , wherein the groove on the lower surface of the clip locking part is formed by laser irradiation or pressing. 4. The semiconductor module according to claim 2 , wherein the groove on the lower surface of the clip locking part is disposed around a perimeter of the end portion of the upper surface of the first clip frame. 5. The semiconductor module according to claim 4 , wherein the clip locking part is continuously disposed around the perimeter of the end portion of the upper surface of the first clip frame. 6. The semiconductor module according to claim 5 , wherein two or more grooves are formed on the lower surface of the clip locking part around the perimeter of the end portion of the upper surface of the first clip frame. 7. The semiconductor module according to claim 1 , wherein the clip locking part has a protruding part that protrudes from the end portion of the upper surface of the first clip frame. 8. The semiconductor module according to claim 7 , wherein the clip locking part has two or more protruding part that protrude from the end portion of the upper surface of the first clip frame in a stepwise manner. 9. The semiconductor module according to claim 2 , wherein an end of the clip locking part has a rectangular shape or a curved shape. 10. The semiconductor module according to claim 8 , wherein the clip locking part is formed by pressing the end portion of the upper surface of the first clip frame upward. 11. The semiconductor module according to claim 1 , wherein the sealing resin has a linear expansion coefficient that is smaller than the linear expansion coefficient of the die pad frame and the first clip frame, and greater than the linear expansion coefficient of the semiconductor chip. 12. The semiconductor module according to claim 1 , wherein a third electrode that has a smaller upper surface area than the first electrode is disposed on the upper surface of the semiconductor chip, and wherein the semiconductor module further comprises: a second clip frame that is disposed on the upper surface of the semiconductor chip to be adjacent to the first clip frame, the second clip frame having a smaller upper surface area than the first clip frame; and a second clip conductive connection member electrically connecting the third electrode of the semiconductor chip and a lower surface of the second clip frame. 13. The semiconductor module according to claim 12 , wherein the semiconductor chip is an MOS transistor, wherein the first electrode is a source electrode of the MOS transistor, wherein the second electrode is a drain electrode of the MOS transistor, and wherein the third electrode is a gate electrode of the MOS transistor. 14. The semiconductor module according to claim 13 , wherein the first clip conductive connection member, the second clip conductive connection member, and the conductive connection member for die pad are soldering material members. 15. The semiconductor module according to claim 1 , wherein the die pad frame has a protrusion disposed on an upper side of an end portion of a main body of the die pad frame and protruding from an upper surface of the main body of the die pad frame in a direction parallel to a direction in which the upper surface of the main body of the die pad frame extends, the protrusion improving adhesion with the sealing resin, and wherein a locking portion is disposed on a tip portion of the protrusion, the locking portion being partially above an upper surface of the protrusion.

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What does patent US10600725B2 cover?
A semiconductor module includes a die pad frame; a semiconductor chip disposed in a chip region on an upper surface of the die pad frame, a conductive connection member for die pad disposed between the second electrode of the semiconductor chip and the upper surface of the die pad frame, the conductive connection member for die pad electrically connecting the second electrode of the semiconduct…
Who is the assignee on this patent?
Shindengen Electric Mfg, Katoh Electric Co Ltd
What technology area does this patent fall under?
Primary CPC classification H01L23/49503. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 24 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).