Bonded body, power module substrate with heat sink, heat sink, method of manufacturing bonded body, method of manufacturing power module substrate with heat sink, and method of manufacturing heat sink

Patent metadata

Field	Value
Publication number	US-10600719-B2
Application number	US-201515504807-A
Country	US
Kind code	B2
Filing date	Aug 24, 2015
Priority date	Aug 26, 2014
Publication date	Mar 24, 2020
Grant date	Mar 24, 2020

Abstract

The present invention is a bonded body in which an aluminum member constituted by an aluminum alloy, and a metal member constituted by copper, nickel, or silver are bonded to each other. The aluminum member is constituted by an aluminum alloy in which a solidus temperature is set to be less than a eutectic temperature of a metal element that constitutes the metal member and aluminum. A Ti layer is formed at a bonding portion between the aluminum member and the metal member, and the aluminum member and the Ti layer, and the Ti layer and the metal member are respectively subjected to solid-phase diffusion bonding.

First claim

The invention claimed is:

1. A bonded body, comprising:
an aluminum member which is constituted by an aluminum alloy; and
a metal member which is constituted by copper,
wherein the aluminum member and the metal member are bonded to each other,
wherein the aluminum member is constituted by the aluminum alloy in which a solidus temperature is set to be less than a eutectic temperature of a metal element that constitutes the metal member and aluminum,
a Ti layer is formed at a bonding portion between the aluminum member and the metal member, and the aluminum member and the Ti layer, and the Ti layer and the metal member are respectively subjected to solid-phase diffusion bonding,
a Cu—Ti layer is formed at a bonding interface between the metal member and the Ti layer, and a thickness of the Cu—Ti layer is 1 μm to 8 μm,
the aluminum member includes 9.6 mass % to 12.0 mass % of Si, and an Al—Ti—Si layer in which Si is solid-soluted in Al 3 Ti is formed at a bonding interface between the aluminum member and the Ti layer,
the Al—Ti—Si sub-layer includes a second Al—Ti—Si sub-layer that is in direct contact with the aluminum member, and a first Al—Ti—Si sub-layer that is in between the second Al—Ti—Si sub-layer and the Ti layer, and
a Si concentration of the second Al—Ti—Si sub-layer is lower than a Si concentration of the first Al—Ti—Si sub-layer.

2. The bonded body according to claim 1 ,
wherein the Si concentration of the first Al—Ti—Si sub-layer is 10 at % to 30 at %.

3. The bonded body according to claim 1 ,
wherein the Si concentration of the second Al—Ti—Si sub-layer is 0.6 at % or more and less than 10 at %.

4. A method of manufacturing a bonded body, the method comprising:
a Ti/metal member bonding step of subjecting a Ti material that becomes a Ti layer and the metal member to solid-phase diffusion bonding; and
an aluminum member/Ti bonding step of subjecting the metal member to which the Ti material is bonded, and the aluminum member to solid-phase diffusion bonding;
wherein the bonded body comprising:
the aluminum member which is constituted by an aluminum alloy; and
the metal member which is constituted by copper,
wherein the aluminum member and the metal member are bonded to each other,

wherein the aluminum member is constituted by the aluminum alloy in which a solidus temperature is set to be less than a eutectic temperature of a metal element that constitutes the metal member and aluminum,
the Ti layer is formed at a bonding portion between the aluminum member and the metal member, and the aluminum member and the Ti layer, and the Ti layer and the metal member are respectively subjected to solid-phase diffusion bonding,
a Cu—Ti layer is formed at a bonding interface between the metal member and the Ti layer, and a thickness of the Cu—Ti layer is 1 μm to 8 μm,
the aluminum member includes 9.6 mass % to 12.0 mass % of Si, and an Al—Ti—Si layer in which Si is solid-soluted in Al 3 Ti is formed at a bonding interface between the aluminum member and the Ti layer,
the Al—Ti—Si layer includes a second Al—Ti—Si sub-layer that is in direct contact with the aluminum member, and a first Al—Ti—Si sub-layer that is in between the second Al—Ti—Si sub-layer and the Ti layer, and
a Si concentration of the second Al—Ti—Si sub-layer is lower than a Si concentration of the first Al—Ti—Si sub-layer.

Assignees

• Mitsubishi Materials Corp

Inventors

• Terasaki Nobuyuki
• Nagatomo Yoshiyuki

Classifications

• H01L21/4882

  Electricity · mapped topic

• H01L23/473

  Electricity · mapped topic

• H01L23/14

  Electricity · mapped topic

• H01L2224/32225

  Electricity · mapped topic

• H01L23/3736 Primary

  Electricity · mapped topic