Functionally graded material by in-situ gradient alloy sputter deposition management

US10597772B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10597772-B2
Application numberUS-201815907838-A
CountryUS
Kind codeB2
Filing dateFeb 28, 2018
Priority dateMay 7, 2015
Publication dateMar 24, 2020
Grant dateMar 24, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Embodiments relate to a sputter chamber with a configurable surface in communication with a target material. A control system is in communication with the chamber and functions to prepare an alloy film by changing a composition of the configurable surface. As ingress gas is introduced to the chamber to interact with the changed composition, the interaction causes a reaction that produces an alloy film.

First claim

Opening claim text (preview).

What is claimed is: 1. A computer implemented method for preparing an alloy film, the method comprising a computer readable storage device having program code embodied therewith, the program code executable by a processing unit to: communicate with a sputter chamber having a configurable surface in communication with a target material, the configurable surface having a moveable segment; flexibly change a composition of the configurable surface, including selectively introduce the segment; and introduce ingress gas to interact with the changed composition, the interaction to produce an alloy film. 2. The computer implemented method of claim 1 , wherein the program code associated with the composition change deposits a material layer with a gradient alloy composition. 3. The computer implemented method of claim 2 , further comprising program code to control the segment as a percentage of surface coverage of the target surface. 4. The computer implemented method of claim 3 , wherein the segment has an addressable control mechanism, and further comprising program code to communicate with a segment address. 5. The computer implemented method of claim 1 , wherein the film has a flexible vertical gradient, and further comprising program code to change the gradient based on a composition of the configurable surface. 6. The computer implemented method of claim 1 , wherein the program code to flexibly change the composition further comprises program code to estimate a gradient composition from a sputter rate of the segment. 7. The computer implemented method of claim 1 , wherein selective introduction of the segment includes program code to change a proportion of the segment with respect to the chamber. 8. The computer implemented method of claim 1 , wherein the program code to flexibly change the composition further comprises program code to selectively introduce a second segment. 9. The computer implemented method of claim 8 , wherein the first segment comprises a first material and the second segment comprises a second material different from the first material. 10. The computer implemented method of claim 1 , wherein the target material comprises Copper and the segment comprises a material selected from the group consisting of: Gallium and Indium. 11. The computer implemented method of claim 1 , wherein the selective introduction of the segment includes program code to change in-situ coverage of the target. 12. A computer system comprising: a processing unit operatively coupled to memory; a sputter chamber in communication with the processing unit, the chamber having a configurable surface in communication with a target material, the configurable surface having a moveable segment; a control system in communication with the sputter chamber, the control system to prepare an alloy film; the control system to change a composition of the configurable surface, including selective introduction of the segment; and ingress gas introduced to interact with the changed composition, the interaction to produce the alloy film. 13. The system of claim 12 , further comprising the composition change of the configurable surface deposits a material layer with a gradient alloy composition. 14. The system of claim 13 , further the control system to control the selective introduction of the segment as a percentage of surface coverage of the target surface. 15. The system of claim 14 , wherein the segment has an addressable control mechanism, and further comprising the control system to communication with a segment address. 16. The system of claim 12 , wherein the film has a flexible vertical gradient, and further comprising the control system to change the gradient based on a composition of the configurable surface. 17. The system of claim 12 , further comprising the control system to estimate a gradient composition from a sputter rate of the segment. 18. The system of claim 12 , wherein selective introduction of the segment includes program code to change a proportion of the segment with respect to the chamber. 19. The system of claim 12 , further comprising the control system to selectively introduce a second segment. 20. The system of claim 19 , wherein the second segment comprises a second material different from the first segment.

Assignees

Inventors

Classifications

  • Monitoring and controlling tubes by information coming from the object and/or discharge · CPC title

  • Controlling the composition · CPC title

  • using more than one target (C23C14/56 takes precedence) · CPC title

  • Plural materials · CPC title

  • Cathode assembly for sputtering apparatus, e.g. Target · CPC title

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Frequently asked questions

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What does patent US10597772B2 cover?
Embodiments relate to a sputter chamber with a configurable surface in communication with a target material. A control system is in communication with the chamber and functions to prepare an alloy film by changing a composition of the configurable surface. As ingress gas is introduced to the chamber to interact with the changed composition, the interaction causes a reaction that produces an all…
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification C23C14/3464. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Mar 24 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).