Quantum dots, production methods thereof, and electronic devices including the same

Patent metadata

Field	Value
Publication number	US-10597580-B2
Application number	US-201615335700-A
Country	US
Kind code	B2
Filing date	Oct 27, 2016
Priority date	Oct 28, 2015
Publication date	Mar 24, 2020
Grant date	Mar 24, 2020

Abstract

A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1:

ABX 3+α   Chemical Formula 1

wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF 4 , or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.

First claim

What is claimed is:

1. A quantum dot having a perovskite crystal structure and comprising a compound represented by Chemical Formula 1 :
Chemical Formula 1
ABX 3+α ,
wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF 4 , or a combination thereof, and α is greater than 0 and less than or equal to about 3; and
wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers,
wherein the quantum dot further comprises at least one of a first dopant and a second dopant,
wherein the first dopant comprises potassium or a first metal having a crystal ionic radius of less than about 133 picometers, wherein the first metal is different from the Group IA metal and the Group IVA metal, and
wherein the second dopant comprises a non-metal element that forms a bond with the Group IVA metal.

2. The quantum dot of claim 1 , wherein a photoluminescence peak wavelength of the quantum dot is in a range of about 300 nanometers to about 700 nanometers.

3. The quantum dot of claim 1 , wherein a photoluminescence peak wavelength of the quantum dot is in a range of about 400 nanometers to about 680 nanometers.

4. The quantum dot of claim 1 , wherein the first metal has a smaller crystal ionic radius than a crystal ionic radius of the Group IVA metal of the B in Chemical Formula 1.

5. The quantum dot of claim 1 , wherein the first metal is selected from Zn, Cd, Hg, Ga, In, Cu, Al, Li, Na, Be, Mg, Ca, Sr, Ag, Pt, Pd, Ni, Co, Fe, Cr, Zr, Mn, Ti, Ce, Gd, and a combination thereof, and the non-metal element is selected from S, Se, Te, and a combination thereof.

6. The quantum dot of claim 1 , wherein the quantum dot comprises the first dopant, and an amount of the first dopant is greater than or equal to about 0.001 parts per million when measured by an inductively coupled plasma-atomic emission spectroscopy analysis.

7. The quantum dot of claim 1 , wherein the quantum dot comprises the second dopant, and an amount of the second dopant is greater than or equal to about 0.001 parts per million when measured by an inductively coupled plasma-atomic emission spectroscopy analysis.

8. The quantum dot of claim 1 , wherein the quantum dot comprises the first dopant and the second dopant, and each of an amount of the first dopant and an amount of the second dopant is greater than or equal to about 0.001 parts per million when measured by an inductively coupled plasma-atomic emission spectroscopy analysis, respectively.

9. The quantum dot of claim 1 , wherein the compound is selected from CsPbCl 3+α ,CsPbBr 3+α , CsPbI 3+α ,CsPb(Cl,I) 3+α , CsPb(Br,I) 3+α , CsPb(Br,Cl) 3+α , and a combination thereof.

10. The quantum dot of claim 1 , wherein an atomic ratio of a halogen relative to the Group IA metal when measured by a transmission electron microscope-energy dispersive X-ray spectroscopy analysis is greater than 3.0.

11. The quantum dot of claim 1 , wherein an atomic ratio of a halogen relative to the Group IA metal when measured by a transmission electron microscope-energy dispersive X-ray spectroscopy analysis is greater than 3.1.

12. The quantum dot of claim 1 , wherein the quantum dot comprises an organic ligand compound selected from RCOOH, RNH 2 , R 2 NH, R 3 N, RSH, R 3 PO, R 3 P, ROH, RCOOR′, RPO(OH) 2 , R 2 POOH, RCOOCOR′ wherein, each R and R′ are independently a substituted or unsubstituted C1 to C24 aliphatic hydrocarbon group or a substituted or unsubstituted C6 to C24 aromatic hydrocarbon group, and a combination thereof, on a surface of the quantum dot.

13. The quantum dot of claim 1 , wherein the quantum dot has a full width at half maximum photoluminescence peak wavelength of less than or equal to about 30 nanometers.

14. The quantum dot of claim 1 , wherein the quantum dot has a quantum efficiency of greater than or equal to about 60%.

15. A method of producing a quantum dot, the method comprising:
providing a reaction solution comprising a first precursor comprising a Group IA metal selected from Rb, Cs, and Fr, NR 4 + , [CH(NH 2 ) 2 ] + , or a combination thereof, and optionally BF 4 , wherein, each R is independently a hydrogen atom or a substituted or unsubstituted C1 to C10 straight or branched alkyl group; and a second precursor comprising a halogen and a Group IVA metal selected from Ge, Si, Sn, Pb, and a combination thereof; and, at least one of a first additive and a second additive, wherein the first additive comprises a halogen and potassium or a first metal having a crystal ionic radius of less than or equal to 133 picometers and being different from the Group IA metal and the Group IVA metal, and the second additive comprises a non-metal element that forms a bond with the Group IVA metal; and
reacting the first precursor and the second precursor in the reaction solution to synthesize a quantum dot that has a perovskite crystal structure, comprises a compound represented by Chemical Formula 1, and has a size of about 1 nanometer to about 50 nanometers:
ABX 3+α   Chemical Formula 1

wherein A is the Group IA metal, NR 4 + , [CH(NH 2 ) 2 ] + , or a combination thereof, B is the Group IVA metal, X is BF 4 , the halogen, or a combination thereof, and α is greater than 0 and less than or equal to about 3.

16. The method of claim 15 , wherein the first metal is present and is selected from Zn, Cd, Hg, Ga, In, Cu, Al, Li, Na, Be, Mg, Ca, Sr, Ag, Pt, Pd, Ni, Co, Fe, Cr, Zr, Mn, Ti, Ce, Gd, and a combination thereof, and the non-metal element is selected from S, Se, Te, and a combination thereof.

17. The method of claim 15 , wherein the first precursor is selected from a metal powder, a metal carbonate, an alkylated metal compound, a metal alkoxide, a metal carboxylate, a metal nitrate, a metal perchlorate, a metal sulfate, a metal acetylacetonate, a metal halide, a metal cyanide, a metal hydroxide, a metal oxide, a metal peroxide, NR 4 BF 4 , and a combination thereof.

18. The method of claim 15 , wherein the second precursor is selected from a Pb halide, a Ge halide, a Si halide, a Sn halide, and a combination thereof.

19. The method of claim 15 , wherein the reaction solution comprises the first additive and the first additive comprises a halide of the first metal.

20. The method of claim 15 , wherein the first additive is selected from ZnX 2 , CdX 2 , HgX 2 , GaX 3 , InX 3 , T 1 X 3 , CuX 2 , AIX 3 , LiX, NaX, BeX 2 , MgX 2 , CaX 2 , SrX 2 , AgX, PtX 2 , PtX 4 , PdX 2 , NiX 2 , CoX 2 , FeX 2 , CrX 2 , CrX 3 , ZrX 3 , ZrX 4 , MnX 2 , TiX 2 , CeX 2 , GdX 2 , and a combination thereof, wherein X is F, Cl, Br, or I.

21. The method of claim 15 , wherein the reaction solution comprises the second additive, and the second additive is selected from sulfur-trioctylphosphine, sulfur-tributylphosphine, sulfur-triphenylphosphine, sulfur-trioctylamine, sulfur-octadecene, sulfur-diphenylphosphine, sulfur-oleylamine, sulfur-dodecylamine, dodecanethiol, octanethiol, selenium-trioctylphosphine (Se-TOP), selenium-tributylphosphine (Se-TBP), selenium-triphenylphosphine, selenium-octadecene (Se-ODE), selenium-diphenylphosphine, selenium-dodecylamine, tellurium-tributylphosphine, tellurium-triphenylphosphine, tellurium-trioctylphosphine, tellurium-octadecene (Te-ODE), tellurium-diphenylphosphine, tellurium-oleylamine, tellurium-dodecylamine, and a combination thereof.

22. The method of claim 15 , wherein the providing the react

Assignees

• Samsung Electronics Co Ltd

Inventors

• MIN Jihyun
• Jang Eun Joo
• Kim Yongwook
• Park Garam

Classifications

• Y10S977/95

  Electromagnetic energy · CPC title

• C09K11/02

  Use of particular materials as binders, particle coatings or suspension media therefor · CPC title

• Y10S977/896

  Chemical synthesis, e.g. chemical bonding or breaking · CPC title

• C09K11/881

  Chalcogenides · CPC title

• C08K3/16

  Halogen-containing compounds · CPC title