Substrate processing method

Patent metadata

Field	Value
Publication number	US-10593569-B2
Application number	US-201715671394-A
Country	US
Kind code	B2
Filing date	Aug 8, 2017
Priority date	Aug 30, 2016
Publication date	Mar 17, 2020
Grant date	Mar 17, 2020

Abstract

A substrate processing method includes a liquid film forming step of supplying a low surface tension liquid onto the upper surface of the substrate while rotating the substrate at a first rotational speed, in order to form a liquid film of the low surface tension liquid on the upper surface of the substrate, a rotation decelerating step of decelerating rotation of the substrate to a second rotational speed while continuing the liquid film forming step, after a processing liquid on the substrate has been replaced with the low surface tension liquid, an opening forming step of forming an opening in the center region of the liquid film on the substrate that rotates at the second rotational speed after completion of the liquid film forming step, and a liquid film removing step of removing the liquid film from the upper surface of the substrate by widening the opening.

First claim

What is claimed is:

1. A substrate processing method comprising:
a substrate holding step of holding a substrate horizontally;
a processing liquid supply step of supplying a processing liquid containing a water, onto the horizontally held substrate;
a substrate rotating step of rotating the horizontally held substrate;
a liquid film forming step of supplying a low surface tension liquid having lower surface tension than water onto an upper surface of the horizontally held substrate while rotating the substrate at a first rotational speed, in order to replace the processing liquid on the substrate with the low surface tension liquid and form a liquid film of the low surface tension liquid on the upper surface of the substrate;
a rotation decelerating step of decelerating rotation of the horizontally held substrate to a second rotational speed that is a lower speed than the first rotational speed while continuing the liquid film forming step, after the processing liquid on the substrate has been replaced with the low surface tension liquid having lower surface tension than water;
an opening forming step of forming an opening in a center region of the liquid film on the substrate that rotates at the second rotational speed after completion of the liquid film forming step; and
a liquid film removing step of removing the liquid film from the upper surface of the substrate by widening the opening,
wherein the first rotational speed is a speed at which the processing liquid is spun off outward from the horizontally held substrate.

2. The substrate processing method according to claim 1 , wherein the second rotational speed is a speed at which the liquid film is held on the substrate.

3. The substrate processing method according to claim 1 , wherein the substrate rotating step includes a step of rotating the substrate at a first processing liquid speed while supplying a processing liquid containing a water, to the upper surface of the horizontally held substrate; and
the method further comprises a substrate accelerating step of accelerating rotation of the substrate that rotates at the first processing liquid speed to a second processing liquid speed that is a higher speed than the first processing liquid speed.

4. The substrate processing method according to claim 3 , wherein the second processing liquid speed is the same speed as the first rotational speed.

5. The substrate processing method according to claim 1 , further comprising a substrate heating step of heating a substrate in a state of holding the liquid film on the upper surface;
wherein the substrate heating step includes a heating interrupting step of interrupting heating of the horizontally held substrate while the opening forming step is being carried out.

6. The substrate processing method according to claim 5 , wherein the substrate heating step includes a heating resuming step of resuming heating of the horizontally held substrate after completion of the opening forming step.

7. The substrate processing method according to claim 5 , wherein the substrate heating step is initiated after completion of the rotation decelerating step.

8. The substrate processing method according to claim 1 , wherein the opening forming step includes an inert gas blowing step of blowing an inert gas toward the center region of the liquid film.

9. The substrate processing method according to claim 1 , further comprising a low surface tension liquid supply step of supplying a low surface tension liquid having a lower surface tension than water onto the upper surface of the horizontally held substrate at a position further outward than the opening.

10. The substrate processing method according to claim 9 , further comprising a step of moving the position on the upper surface of the horizontally held substrate, to which the low surface tension liquid having a lower surface tension than water is supplied, so as to follow widening of the opening.

Assignees

• Screen Holdings Co Ltd

Inventors

• Hinode Taiki
• Fujii Sadamu
• Takeaki Rei

Classifications

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P72/0448

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0406 Primary

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P70/00 Primary

  Cleaning of wafers, substrates or parts of devices · CPC title