Capacitive sensor and manufacturing method thereof

US10591523B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10591523-B2
Application numberUS-201515507143-A
CountryUS
Kind codeB2
Filing dateMay 26, 2015
Priority dateAug 29, 2014
Publication dateMar 17, 2020
Grant dateMar 17, 2020

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A capacitive sensor is disclosed. The capacitive sensor includes a substrate, a first electrode and a second electrode formed on the substrate, an insulation layer formed on the substrate on which the first electrode and the second electrode are formed, and a sensing layer that is formed on the insulation layer and includes graphene.

First claim

Opening claim text (preview).

What is claimed is: 1. A capacitive sensor comprising: a substrate comprising a terminal area and a sensing area; a first electrode comprising a first terminal disposed on the terminal area and a first pattern disposed on the sensing area; a second electrode separated from the first electrode and comprising a second terminal disposed on the terminal area and a second pattern disposed on the sensing area; an insulation layer disposed on the sensing area, the insulation layer covers the first pattern and the second pattern and exposes the first terminal and the second terminal; and a sensing layer disposed on the insulation layer and covering at least a portion of the insulation layer such that the sensing layer is insulated and physically separated from the first and second electrodes, wherein the sensing layer comprises a graphene. 2. The capacitive sensor of claim 1 , wherein the substrate comprises silicon, glass, or alumina. 3. The capacitive sensor of claim 1 , wherein the sensing layer is a graphene paste containing the graphene. 4. The capacitive sensor of claim 1 , wherein the first electrode and the second electrode comprise at least one of chromium (Cr), gold (Au), aluminum (Al), platinum (Pt), molybdenum (Mo), copper (Cu), iron (Fe), tungsten (W), and palladium (Pd). 5. The capacitive sensor of claim 1 , wherein the first pattern and the second pattern form an interdigitated pattern. 6. The capacitive sensor of claim 1 , wherein a capacitance or a permittivity of the sensing layer changes according to a state of a measured substance touching the sensing layer. 7. The capacitive sensor of claim 1 , wherein the sensing layer has a thickness of 4 μm to 6 μm. 8. The capacitive sensor of claim 1 , wherein the insulation layer has a thickness of 500 A to 2000 A. 9. A method of manufacturing a capacitive sensor, the method comprising: disposing at least one electrode comprising a terminal and a pattern on a substrate comprising a terminal area and a sensing area; disposing an insulation layer on the sensing area of the substrate, the insulation layer covers the first pattern and the second pattern and exposes the first terminal and the second terminal; and disposing a sensing layer on the insulation layer such that the sensing layer covers at least a portion of the insulation layer and is insulated and physically separated from the at least one electrode, wherein the sensing layer comprises a graphene, and wherein the terminal is disposed on the terminal area and the pattern is disposed on the sensing area. 10. The method of claim 9 , wherein the forming of the at least one electrode comprises: depositing an electrode substance; and applying lithography, the lithography comprising coating a photosensitive material, exposure to light, and etching. 11. A method of manufacturing a capacitive sensor, the method comprising: disposing at least one electrode comprising a terminal and a pattern on a substrate comprising a terminal area and a sensing area; disposing an insulation layer on the sensing area of the substrate, the insulation layer covers the first pattern and the second pattern and exposes the first terminal and the second terminal; and disposing a sensing layer on the insulation layer such that the sensing layer covers at least a portion of the insulation layer and is insulated and physically separated from the at least one electrode, wherein the sensing layer comprises a graphene; wherein the terminal is disposed on the terminal area and the pattern is disposed on the sensing area; and wherein the disposing the sensing layer comprises: screen printing a graphene paste containing the graphene. 12. The capacitive sensor of claim 1 , wherein the first pattern comprises a first extending part and a plurality of first branch parts, and the second pattern comprises a second extending part and a plurality of second branch parts. 13. The capacitative sensor of claim 12 , wherein the plurality of first branch parts and the plurality of second branch parts form an interdigitated pattern.

Assignees

Inventors

Classifications

  • Etching of wafers, substrates or parts of devices · CPC title

  • of insulating materials · CPC title

  • for lubricating properties · CPC title

  • by varying dielectric · CPC title

  • G01N27/22Primary

    by investigating capacitance · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10591523B2 cover?
A capacitive sensor is disclosed. The capacitive sensor includes a substrate, a first electrode and a second electrode formed on the substrate, an insulation layer formed on the substrate on which the first electrode and the second electrode are formed, and a sensing layer that is formed on the insulation layer and includes graphene.
Who is the assignee on this patent?
Univ Korea Res & Bus Found
What technology area does this patent fall under?
Primary CPC classification G01N27/22. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Mar 17 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).