Quantum dots, production methods thereof, and electronic devices including the same

Patent metadata

Field	Value
Publication number	US-10585228-B2
Application number	US-201615393632-A
Country	US
Kind code	B2
Filing date	Dec 29, 2016
Priority date	Dec 29, 2015
Publication date	Mar 10, 2020
Grant date	Mar 10, 2020

Abstract

An electronic device includes, a light source having a peak emission at a wavelength between about 440 nm to about 480 nm; and a photoconversion layer disposed on the light source,
wherein the photoconversion layer includes a first quantum dot which emits red light and a second quantum dot which emits green light, wherein at least one of the first quantum dot and the second quantum dot has a perovskite crystal structure and includes a compound represented by Chemical Formula 1:

AB′X 3+α   Chemical Formula 1
wherein A is a Group IA metal, NR 4 + , or a combination thereof, B′ is a Group IVA metal, X is a halogen, BF 4 − , or a combination thereof, and α is 0 to 3.

First claim

What is claimed is:

1. An electronic device comprising:
a light source having a peak emission at a wavelength of about 440 nanometers to about 480 nanometers; and
a photoconversion layer disposed on the light source,
wherein the photoconversion layer comprises a first quantum dot, which emits red light, and a second quantum dot, which emits green light,
wherein at least one of the first quantum dot and the second quantum dot is a perovskite quantum dot having a perovskite crystal structure and the perovskite quantum dot comprises a compound represented by Chemical Formula 1:
AB′X 3+α   Chemical Formula 1

wherein A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, NR 4 + , wherein each R is independently a hydrogen atom or a substituted or unsubstituted C1 to C10 straight chain or branched chain alkyl group, [CH(NH 2 ) 2 ] + , or a combination thereof; B′ is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof; X is a halogen selected from F, Cl, Br, I, and a combination thereof, BF 4 − , or a combination thereof, and α is 0 to 3, and
wherein the perovskite quantum dot comprises a greater amount of halogen than a stoichiometric amount for a perovskite crystal.

2. The electronic device of claim 1 , wherein the photoconversion layer comprises a polymer matrix, and the first quantum dot and the second quantum dot are dispersed in the polymer matrix.

3. The electronic device of claim 1 , wherein a peak emission wavelength of the red light is of about 620 nanometers to about 650 nanometers and α peak emission wavelength of the green light is of about 500 nanometers to about 550 nanometers.

4. The electronic device of claim 1 , wherein at least one of the first quantum dot and the second quantum dot comprises a non-perovskite quantum dot not having a perovskite crystal structure and the non-perovskite quantum dot comprises a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV element, a Group IV compound, a Group compound, a Group I-II-IV-VI compound, or a combination thereof.

5. The electronic device of claim 1 , wherein in the perovskite quantum dot comprises the compound represented by Chemical Formula 1 in which A is the Group IA metal and X is the halogen, and an atomic ratio of the halogen to the Group IA metal is greater than 3 as measured by transmission electron microscope-energy dispersive X-ray spectroscopy.

6. The electronic device of claim 1 , wherein the perovskite quantum dot further comprises at least one of a first dopant and α second dopant, wherein the first dopant comprises potassium or a first metal having a crystal ionic radius of less than about 133 picometers and which is different from the Group IVA metal and, if present, the Group IA metal, and the second dopant comprises a non-metal element which forms a bond with the Group IVA metal.

7. The electronic device of claim 6 , wherein the first metal comprises Zn, Cd, Hg, Ga, In, Tl, Cu, Al, Li, Na, Be, Mg, Ca, Sr, Ag, Pt, Pd, Ni, Co, Fe, Cr, Zr, Mn, Ti, Ce, Gd, or a combination thereof, and the non-metal element comprises S, Se, Te, or a combination thereof.

8. The electronic device of claim 6 , wherein the perovskite quantum dot comprises the first dopant, and an amount of the first dopant is greater than or equal to about 0.001 parts per million as measured by inductively coupled plasma-atomic emission spectroscopy.

9. The electronic device of claim 6 , wherein the perovskite quantum dot comprises the second dopant, and an amount of the second dopant is greater than or equal to about 0.001 parts per million as measured by inductively coupled plasma-atomic emission spectroscopy.

10. The electronic device of claim 1 , wherein the first quantum dot and the second quantum dot each independently comprise an organic ligand compound on a surface thereof, wherein the organic ligand compound is selected from RCOOH, RNH 2 , R 2 NH, R 3 N, RSH, R 3 PO, R 3 P, ROH, RCOOR′, RPO(OH) 2 , R 2 POOH, and RCOOCOR′, wherein, R and R′ are independently a substituted or unsubstituted C1 to C24 aliphatic hydrocarbon group or a substituted or unsubstituted C5 to C24 aromatic hydrocarbon group, and a combination thereof.

11. The electronic device of claim 1 , wherein the electronic device is configured to emit light having a color gamut ratio of at least about 80% with respect to BT2020 in a CIE1931 color space.

12. The electronic device of claim 1 , wherein the electronic device is configured to emit light having a color gamut ratio of at least about 87% with respect to BT2020 in a CIE1931 color space.

13. The electronic device of claim 1 , wherein the photoconversion layer is configured such that green light emitted from the photoconversion layer has a color coordinate Cy value of greater than or equal to about 0.73.

14. The electronic device of claim 1 , wherein the electronic device further comprises a liquid crystal panel, and the liquid crystal panel comprises a lower substrate, an upper substrate, and α liquid crystal layer interposed between the upper and lower substrates.

15. The electronic device of claim 14 , wherein the liquid crystal panel comprises an absorption color filter,
the photoconversion layer is configured to emit white light, and
the liquid crystal panel is disposed on the photoconversion layer such that the white light passes through the liquid crystal panel.

16. The electronic device of claim 15 , wherein the absorption color filter has a first color section configured for passing red light, a second color section configured for passing green light, and α third color section configured for passing blue light,
wherein a light emitted from the photoconversion layer and passing through the second color section has a spectrum which does not include an emission peak having a normalized intensity of greater than or equal to about 0.1 at a wavelength of less than about 500 nanometers, and wherein a light emitted from the photoconversion layer and passing through the third section has a spectrum which does not include an emission peak having an a normalized intensity of greater than or equal to about 0.15 at a wavelength of greater than about 500 nanometers.

17. The electronic device of claim 14 , wherein the liquid crystal panel does not comprise an absorption color filter, and the photoconversion layer is disposed on a top surface or a bottom surface of the upper substrate of the liquid crystal panel.

18. The electronic device of claim 17 , wherein the photoconversion layer has a pattern comprising a first color section configured to emit red light, a second color section configured to emit green light, and a third color section configured to pass or emit blue light.

19. The electronic device of claim 18 , wherein the red light has a maximum peak emission wavelength of about 620 nanometers to about 650 nanometers and the green light has a maximum peak emission wavelength of about 530 nanometers to about 550 nanometers.

20. The electronic device of claim 19 , wherein the first color section comprises the first quantum dot and the second color section comprises the second quantum dot.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Tae Hyung
• MIN Jihyun
• Kim Yongwook
• Jang Eun Joo

Classifications

• C09K11/703

  with zinc or cadmium · CPC title

• C09K11/665

  with alkali or alkaline earth metals · CPC title

• G02F2202/36

  Micro- or nanomaterials · CPC title

• G02B6/005 Primary

  provided by one optical element, or plurality thereof, placed on the light output side of the light guide · CPC title

• C09K11/88

  containing selenium, tellurium or unspecified chalcogen elements · CPC title