Method of fabricating a MEMS and/or NEMS structure comprising at least two elements suspended from a support at different distances from said support

Patent metadata

Field	Value
Publication number	US-10585074-B2
Application number	US-201815873136-A
Country	US
Kind code	B2
Filing date	Jan 17, 2018
Priority date	Jan 19, 2017
Publication date	Mar 10, 2020
Grant date	Mar 10, 2020

Abstract

Method of fabricating a microelectromechanical structure et comprising two elements suspended from a support, a cavity made in the support, said cavity having two different depths, including:
fabrication of a mask on an element comprising a substrate and a structured layer formed on the substrate, said structured layer comprising the two elements that will be suspended above the cavity, the mask being formed above the structured layer, said mask comprising openings with different sections, the openings being distributed in two zones, each zone comprising openings with the same section, anisotropic etching of the element so as to define the two depths under the two suspended elements in the substrate through the structured layer, isotropic etching of the element so as to make the cavity under the suspended elements.

First claim

The invention claimed is:

1. A method of fabricating a microelectromechanical and/or nanoelectromechanical structure comprising n elements suspended from a support, n being an integer greater than or equal 2, a cavity made in the support, said cavity having m different depths along a direction orthogonal to a median plane of the structure, m being an integer greater than or equal 2, comprising:
fabrication of a mask on a stack comprising a substrate and a structured layer formed on the substrate, said structured layer comprising the n elements that will be suspended above the cavity, the mask being formed above the structured layer, said mask comprising openings with different sections, the openings being distributed in at least m zones, each zone comprising openings with the same section;
anisotropic etching of the substrate through the mask and the structured layer to make the at least m zones at different depths so as to define at least m depths in the substrate; and
isotropic etching of the substrate to form said cavity connecting the at least m etched zones, the n elements then being suspended above the cavity,
wherein the isotropic etching is a reactive ion etching, and
wherein the anisotropic etching is a deep reactive ion etching.

2. The fabrication method according to claim 1 , wherein the cavity has a first dimension and a second dimension along orthogonal directions and contained in a median plane of the structure, and
wherein the openings in the etching mask are distributed approximately in rows and columns, the rows being aligned along the direction of the first dimension of the cavity and the columns being aligned along the direction of the second dimension.

3. The fabrication method according to claim 2 , wherein each zone comprises several successive columns, the sections of the openings being identical for each column in the same zone and different for columns in different zones, so as to form a cavity comprising a bottom with steps of different depths, each step corresponding to a zone.

4. The fabrication method according to claim 2 , wherein each zone comprises a column, the section of the openings in each column varying monotonously at least along the direction of the first dimension so as to form a cavity with a bottom approximately forming an inclined plane.

5. The fabrication method according to claim 1 , wherein each zone is formed at least vertically in line with one element of the structured layer and the openings in each zone are formed at least vertically in line with spaces between two elements of the structured layer.

6. The fabrication method according to claim 5 , wherein the elements that will be suspended are membranes provided with holes, openings in each zone of the etching mask also being formed vertically in line with holes in the membranes.

7. The fabrication method according to claim 1 , wherein the stack comprises a sacrificial layer between the structured layer and the substrate, the method also comprises a step in which the sacrificial layer is removed to release suspended elements from the sacrificial layer.

8. The fabrication method according to claim 1 , wherein the structure layer is made of Si or SiN+Pt.

9. The fabrication method according to claim 8 , wherein the stack is made from an SOI substrate and in which the structured layer is obtained by structuring of the monocrystalline silicon layer.

10. The fabrication method according to claim 1 , further comprising bonding a cap after the suspended elements have been released, above the cavity and facing the suspended elements.

11. The fabrication method according to claim 1 , wherein n is equal to m and each suspended element is suspended above the cavity at a different distance from the bottom of the cavity.

12. The fabrication method of fabricating a device for analysis of a gas mix making use of the method according to claim 1 and further comprising:
fabrication of electrical connections at the suspended elements;
fabrication of an heating for heating the suspended elements; and
connection of suspended elements to a polarization circuitry and to a sensor for measuring the electrical resistance of the suspended elements.

13. The fabrication method according to claim 7 , wherein the stack comprises a sacrificial layer between the structured layer and the substrate, the method also comprises a step in which the sacrificial layer is removed to release suspended elements from the sacrificial layer, by means of hydrofluoric acid.

Assignees

• Commissariat Energie Atomique

Inventors

• Fain Bruno
• Ladner Carine
• Alava Thomas

Classifications

• B81C2201/0132

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