Purification system of trichlorosilane and silicon crystal

Patent metadata

Field	Value
Publication number	US-10584035-B2
Application number	US-201815891711-A
Country	US
Kind code	B2
Filing date	Feb 8, 2018
Priority date	Feb 24, 2017
Publication date	Mar 10, 2020
Grant date	Mar 10, 2020

Abstract

A system for purifying trichlorosilane that can prevent re-contamination by the dissociation of an adduct occurring in association with the conversion of high boiling point compounds or the remaining of impurities due to an equilibrium constraint is provided. Trichlorosilane containing impurities serving as a donor or an acceptor in silicon crystals is supplied to a multistage impurity conversion step. These impurities in the trichlorosilane are converted into high boiling point compounds in the presence of a distillation aid. A plurality of impurity conversion step sections (101 to 10n) are connected in series, and any of the impurity conversion step sections comprises a reception section a for the trichlorosilane from the preceding stage section, an introduction section b for the distillation aid, a transmission section c for the trichlorosilane to the subsequent stage section, and a drain section d that discharges a remainder out of the impurity conversion step section.

First claim

What is claimed is:

1. A system for purifying trichlorosilane comprising an impurity serving as a donor or an acceptor in a silicon crystal, the system comprising:
an impurity conversion section that converts the impurity in the trichlorosilane into a high boiling point compound in the presence of a distillation aid, and
a purification section that distils and purifies the trichlorosilane supplied from the impurity conversion section,
the impurity conversion section being composed of at least three impurity conversion step sections, wherein
the impurity conversion step sections are connected in series, and
any of the impurity conversion step sections comprises:
a reception section for the trichlorosilane from the preceding stage section,
an introduction section for the distillation aid, and
a transmission section for the trichlorosilane to the subsequent stage section, and
any of the impurity conversion step sections other than a first impurity conversion step section comprises a drain section that discharges a remainder from the impurity conversion step section, and wherein
any of the impurity conversion step sections comprises a vaporizer, and the trichlorosilane from which the high boiling point compound is separated by vaporizing, with the vaporizer, the trichlorosilane treated in the impurity conversion step section is transmitted to the subsequent stage section.

2. The system for purifying trichlorosilane according to claim 1 , wherein
any of the drain sections discharges a remainder to a preceding impurity conversion step section.

3. The system for purifying trichlorosilane according to claim 1 , wherein in at least one of the impurity conversion step sections, the reception section for the trichlorosilane from the preceding stage section and the introduction section for the distillation aid are integrated.

4. The system for purifying trichlorosilane according to claim 1 , wherein at least one of the impurity conversion step sections comprises a distiller that separates the distillation aid and the high boiling point compound between the vaporizer and the transmission section.

5. The system for purifying trichlorosilane according to claim 1 , wherein the transmission of the trichlorosilane from which the high boiling point compound is separated to the subsequent stage section is performed in a state of a liquid.

6. The system for purifying trichlorosilane according to claim 1 , wherein the distillation aid comprises at least one compound selected from aromatic aldehyde, oxygen, and ozone.

7. The system for purifying trichlorosilane according to claim 6 , wherein
the distillation aid used in the first impurity conversion step section is ozone, and
the distillation aid used in the second impurity conversion step section comprises at least one compound selected from aromatic aldehyde, oxygen, and ozone.

8. The system for purifying trichlorosilane according to claim 1 , wherein the amount of substance of the distillation aid supplied to each of the impurity conversion step sections is 1 to 10 9 times the amount that allows the distillation aid to react with the total amount of the impurities comprised in the chlorosilane to thereby convert all thereof into the high boiling point compound.

9. The system for purifying trichlorosilane according to claim 1 , wherein a reaction temperature in a state where the distillation aid is introduced in the impurity conversion step sections is set at 0° C. or more and 150° C. or less.

Assignees

• Shinetsu Chemical Co

Inventors

• Kishi Ryota
• Ishida Masahiko
• Netsu Shigeyoshi

Classifications

• C01B33/03

  by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent · CPC title

• C30B29/06

  Silicon · CPC title

• B01D3/009

  in combination with chemical reactions · CPC title

• C01B33/10794 Primary

  by forming addition compounds or complexes, the reactant being possibly contained in an adsorbent · CPC title

• C30B35/007

  Apparatus for preparing, pre-treating the source material to be used for crystal growth · CPC title