Tunable laser and control method for same

Patent metadata

Field	Value
Publication number	US-10581222-B2
Application number	US-201816034471-A
Country	US
Kind code	B2
Filing date	Jul 13, 2018
Priority date	Jan 15, 2016
Publication date	Mar 3, 2020
Grant date	Mar 3, 2020

Abstract

A tunable laser is provided, including a first reflector, a second reflector, a phase adjustment area, a gain area, a first detector, a second detector, and a controller. The phase adjustment area is located between the first reflector and the gain area, the gain area is located between the phase adjustment area and the second reflector, a reflectivity of the first reflector is adjustable, and a reflectivity of the second reflector is adjustable. The first detector is configured to convert an optical signal of the first reflector into a first electrical signal. The second detector is configured to convert an optical signal of the second reflector into a second electrical signal. The controller is configured to adjust at least one of the reflectivity of the first reflector or the reflectivity of the second reflector based on the first electrical signal and the second electrical signal.

First claim

What is claimed is:

1. A tunable laser, comprising a first reflector, a second reflector, a phase adjustment area, a gain area, a first detector, a second detector, and a controller, wherein
the phase adjustment area is located between the first reflector and the gain area, the gain area is located between the phase adjustment area and the second reflector, a reflectivity of the first reflector is adjustable, and a reflectivity of the second reflector is adjustable;
the first reflector comprises a first heating layer configured to change a reflection peak wavelength of the first reflector;
the second reflector comprises a second heating layer configured to change a reflection peak wavelength of the second reflector;
the first detector is configured to convert a first optical signal of the first reflector into a first electrical signal;
the second detector is configured to convert a second optical signal of the second reflector into a second electrical signal; and
the controller is configured to adjust at least one of the reflectivity of the first reflector or the reflectivity of the second reflector based on the first electrical signal and the second electrical signal.

2. The tunable laser according to claim 1 , wherein the controller is configured to adjust the at least one of the reflectivity of the first reflector or the reflectivity of the second reflector based on a result of comparison between the first electrical signal and the second electrical signal.

3. The tunable laser according to claim 2 , wherein the controller is configured to adjust the at least one of the reflectivity of the first reflector or the reflectivity of the second reflector based on a ratio of a current value of the first electrical signal to a current value of the second electrical signal.

4. The tunable laser according to claim 2 , wherein the controller is configured to adjust the at least one of the reflectivity of the first reflector or the reflectivity of the second reflector based on a ratio of a voltage value of the first electrical signal to a voltage value of the second electrical signal.

5. The tunable laser according to claim 1 , wherein the controller is further configured to control at least one of a phase of the phase adjustment area or a gain of the gain area.

6. The tunable laser according to claim 1 , wherein the tunable laser is a tunable semiconductor laser, and the first reflector comprises:
an N-type doped semiconductor material layer;
an intrinsic doped semiconductor material layer, located on the N-type doped semiconductor material layer; and
a P-type doped semiconductor material layer, located on the intrinsic doped semiconductor material layer.

7. The tunable laser according to claim 6 , wherein the intrinsic doped semiconductor material layer comprises a waveguide, and the P-type doped semiconductor material layer comprises a grating structure.

8. The tunable laser according to claim 1 , wherein the first detector comprises:
an N-type doped semiconductor material layer;
an intrinsic doped semiconductor material layer, located on the N-type doped semiconductor material layer;
a P-type doped semiconductor material layer, located on the intrinsic doped semiconductor material layer; and
a metal layer, located on the P-type doped semiconductor material layer, wherein the first detector converts an optical signal of the intrinsic doped semiconductor material layer into the first electrical signal of the metal layer.

9. The tunable laser according to claim 8 , wherein the first reflector and the first detector share a same N-type doped semiconductor material layer, a same intrinsic doped semiconductor material layer, and a same P-type doped semiconductor material layer.

10. The tunable laser according to claim 9 , wherein the first reflector further comprises an insulation medium layer, the insulation medium layer is located on the metal layer, the first heating layer is located on the insulation medium layer.

11. The tunable laser according to claim 1 , wherein a first optical splitter is located between the first detector and the first reflector.

12. The tunable laser according to claim 1 , wherein a first optical interface is further included at an end that is distal from the gain area and on the first reflector.

13. The tunable laser according to claim 12 , wherein an amplifier is disposed between the first reflector and the first optical interface to amplify an optical signal that is output from the first reflector.

14. A control method for controlling a tunable laser, wherein the tunable laser comprises a first reflector, a second reflector, a phase adjustment area, a gain area, a first detector, a second detector, and a controller, the first reflector comprises a first heating layer configured to change a reflection peak wavelength of the first reflector, the second reflector comprises a second heating layer configured to change a reflection peak wavelength of the second reflector, the method comprising:
setting a driving condition of the first reflector and a driving condition of the second reflector based on a target wavelength, wherein the driving condition of the first reflector is associated with a reflectivity of the first reflector, and the driving condition of the second reflector is associated with a reflectivity of the second reflector;
converting an optical signal of the first reflector into a first electrical signal, and converting an optical signal of the second reflector into a second electrical signal; and
adjusting at least one of the driving condition of the first reflector or the driving condition of the second reflector based on the first electrical signal and the second electrical signal.

15. The method according to claim 14 , wherein the adjusting at least one of the driving condition of the first reflector or the driving condition of the second reflector based on the first electrical signal and the second electrical signal comprises: adjusting the at least one of the driving condition of the first reflector or the driving condition of the second reflector based on a result of comparison between the first electrical signal and the second electrical signal.

16. The method according to claim 15 , wherein the adjusting the at least one of the driving condition of the first reflector or the driving condition of the second reflector based on the result of comparison between the first electrical signal and the second electrical signal comprises: adjusting the at least one of the driving condition of the first reflector or the driving condition of the second reflector based on a ratio of a current value of the first electrical signal to a current value of the second electrical signal.

17. The method according to claim 15 , wherein the adjusting the at least one of the driving condition of the first reflector or the driving condition of the second reflector based on the result of comparison between the first electrical signal and the second electrical signal specifically comprises: adjusting the at least one of the driving condition of the first reflector or the driving condition of the second reflector based on a ratio of a voltage value of the first electrical signal to a voltage value of the second electrical signal.

18. The method according to claim 14 , further comprising:
setting a gain and a phase of the tunable laser based on the target wavelength.

Assignees

• Huawei Tech Co Ltd

Inventors

• He Jifang
• Chen Hongmin
• Lei Hongbing
• Shen Xiao Andy

Classifications

• H01S3/105 Primary

  by controlling the mutual position or the reflecting properties of the reflectors of the cavity {, e.g. by controlling the cavity length}({H01S3/10076}, H01S3/13 take precedence) · CPC title

• H01S5/0617

  using memorised or pre-programmed laser characteristics · CPC title

• H01S5/0264

  for monitoring the laser-output · CPC title

• H01S5/0687

  Stabilising the frequency of the laser · CPC title

• H01S5/06256 Primary

  with DBR-structure · CPC title