Semiconductor light emitting device

Patent metadata

Field	Value
Publication number	US-10581218-B2
Application number	US-201815986153-A
Country	US
Kind code	B2
Filing date	May 22, 2018
Priority date	Dec 9, 2015
Publication date	Mar 3, 2020
Grant date	Mar 3, 2020

Abstract

A semiconductor light emitting device includes a mount section having an insulating property connected to a heat sink, a plurality of semiconductor laser elements disposed on the mount section, and a heat radiation block having an insulating property disposed on the plurality of semiconductor laser elements. A first wiring made of a metal is disposed on an upper surface of the mount section, and a second wiring made of a metal is disposed on a lower surface of the heat radiation block, a part of the second wiring being electrically connected to the first wiring. By electrically connecting the first wiring and the second wiring to each of the plurality of semiconductor laser elements, the plurality of semiconductor laser elements are connected in series, and have a same polarity with each other at a side that each of the plurality of semiconductor laser elements is connected to the first wiring.

First claim

What is claimed is:

1. A semiconductor light emitting device comprising:
a mount section connected to a heat sink, the mount section having an upper surface and a lower surface, the mount section having an insulating property;
first wirings disposed on the upper surface of the mount section, the first wirings being made of metal,
a plurality of semiconductor laser elements disposed on the first wirings on the upper surface of the mount section;
a heat radiation block disposed on the plurality of semiconductor laser elements, the heat radiation block having an upper surface and a lower surface, the heat radiation block having an insulating property,
second wirings disposed on the lower surface of the heat radiation block, the second wirings being made of a metal, a part of the second wirings being electrically connected to the first wirings; and
a conductive post disposed between the mount section and the heat radiation block, the conductive post being electrically connected to the first wirings and the second wirings,
wherein:
each of the plurality of semiconductor laser elements is sandwiched by the upper surface of the mount section and the lower surface of the heat radiation block, and
by electrically connecting the first wirings and the second wirings to each of the plurality of semiconductor laser elements, the plurality of semiconductor laser elements are connected in series, and have a same polarity with each other at a side that each of the plurality of semiconductor laser elements is connected to the first wirings.

2. The semiconductor light emitting device according to claim 1 , wherein a joint part of each of the plurality of the semiconductor laser elements has a p-type polarity, the joint part joining with the first wirings.

3. The semiconductor light emitting device according to claim 1 , wherein the plurality of semiconductor laser elements have respective luminous points disposed at a same distance from an upper surface of the first wirings with each other.

4. The semiconductor light emitting device according to claim 1 , wherein:
a third wiring is disposed on an upper surface of the heat radiation block, the third wiring being made of a metal,
the second wirings and the third wiring are electrically connected to each other, and
the plurality of semiconductor laser elements are capable to be supplied electricity via the third wiring.

5. The semiconductor light emitting device according to claim 4 , wherein:
the heat radiation block includes a via made of a conductive material, and
the via electrically connects the second wirings and the third wiring.

6. The semiconductor light emitting device according to claim 1 , wherein the plurality of semiconductor laser elements include a first semiconductor laser element and a second semiconductor laser element,
a luminous point of the first semiconductor laser element is located closer to the second semiconductor laser element than a center line of the first semiconductor laser element is to the second semiconductor laser element, the center line of the first semiconductor laser element extending in a thickness direction of the first semiconductor laser element, and
a luminous point of the second semiconductor laser element is located closer to the first semiconductor laser element than a center line of the second semiconductor laser element is to the first semiconductor laser element, the center line of the second semiconductor laser element extending in a thickness direction of the second semiconductor laser element.

7. The semiconductor light emitting device according to claim 1 , wherein two semiconductor laser elements disposed on the mount section among the plurality of the semiconductor laser elements have respective luminous points separated at an interval of not more than 100 μm.

8. The semiconductor light emitting device according to claim 1 , wherein each of the plurality of semiconductor laser elements includes a nitride semiconductor.

9. The semiconductor light emitting device according to claim 1 , wherein each of the plurality of semiconductor laser elements includes a substrate and a semiconductor layer including an active layer formed on the substrate, the semiconductor layer being joined to the first wirings.

10. The semiconductor light emitting device according to claim 1 , wherein a mount groove is between the first wirings in the mount section.

11. The semiconductor light emitting device according to claim 1 , wherein a heat radiation block groove is between the second wirings in the heat radiation block.

12. The semiconductor light emitting device according to claim 1 , wherein a mount protrusion is between the first wirings in the mount section.

13. The semiconductor light emitting device according to claim 1 , wherein a heat radiation block protrusion is between the second wirings in the heat radiation block.

14. A semiconductor light emitting device comprising:
a mount section connected to a heat sink, the mount section having an upper surface and a lower surface, the mount section having an insulating property;
a first mount wiring and a second mount wiring disposed on the upper surface of the mount section, the first mount wiring and the second mount wiring being made of metal,
a first semiconductor laser element disposed on the first mount wiring on the upper surface of the mount section and a second semiconductor laser element disposed on the second mount wiring on the upper surface of the mount section;
a heat radiation block disposed on the plurality of semiconductor laser elements, the heat radiation block having an upper surface and a lower surface, the heat radiation block having an insulating property, and
a first heat radiation block wiring and a second heat radiation block wiring disposed on the lower surface of the heat radiation block, the first heat radiation block wiring and the second heat radiation block wiring being made of a metal, wherein:
the first semiconductor laser element is sandwiched by the first mount wiring and the second heat radiation block wiring,
the second semiconductor laser element is sandwiched by the second mount wiring and the first heat radiation block wiring,
a conductive post is sandwiched by the first mount wiring and the first heat radiation block wiring, the first semiconductor laser element is electrically connected to the first mount wiring and the second heat radiation block wiring,
the second semiconductor laser element is electrically connected to the second mount wiring and the first heat radiation block wiring,
the conductive post is electrically connected to the first mount wiring and the first heat radiation block wiring,
the first semiconductor laser element and the second semiconductor laser element are connected in series, and
the first semiconductor laser element at a side that the first semiconductor laser element is connected to the first mount wiring has a same polarity with the second semiconductor laser element at a side that the second semiconductor laser element is connected to the second mount wiring.

15. The semiconductor light emitting device according to claim 14 , wherein a joint part of each of the plurality of the semiconductor laser elements has a p-type polarity, the joint part joining with the first mount wiring and the second mount wiring.

16. The semiconductor light emitting device according to claim 14 , a film thickness of each of the first mount wiring and the second mount wiring is no less than 50 μm and not more than 300 μm.

17. The semiconductor light emitting device according to cl

Assignees

• Panasonic Corp

Inventors

• Nozaki Shinichiro

Classifications

• H01S5/02484

  Sapphire or diamond heat spreaders · CPC title

• H01S5/02469 Primary

  Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC · CPC title

• H01S5/02212

  Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis · CPC title

• H01S5/4025

  Array arrangements, e.g. constituted by discrete laser diodes or laser bar (H01S5/42 takes precedence) · CPC title

• H01S5/34333

  with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser · CPC title