Method for manufacturing organic electroluminescence device, and organic electroluminescence device

Patent metadata

Field	Value
Publication number	US-10581029-B2
Application number	US-201715802431-A
Country	US
Kind code	B2
Filing date	Nov 2, 2017
Priority date	Apr 28, 2017
Publication date	Mar 3, 2020
Grant date	Mar 3, 2020

Abstract

The present disclosure provides a method for manufacturing an organic electroluminescence device, including steps of: adjusting a grating period of a periodic grating structure in such a manner that a wavelength of an emergent light beam caused by SP-coupling is within a predetermined range of a light-emission peak of the organic electroluminescence device; and forming the periodic grating structure in the organic electroluminescence device in accordance with the obtained grating period by adjustment.

First claim

What is claimed is:

1. A method for manufacturing an organic electroluminescence device, comprising steps of:
adjusting a grating period of a periodic grating structure in such a manner that a wavelength of an emergent light beam caused by surface plasmon (SP)-coupling is within a predetermined range of a light-emission peak of the organic electroluminescence device; and
forming the periodic grating structure in the organic electroluminescence device in accordance with the obtained grating period by adjustment;
wherein the step of forming the periodic grating structure in the organic electroluminescence device comprises, from top to bottom:
forming the periodic grating structure on a passivation layer PVX of a thin film transistor (TFT) substrate at a corresponding electroluminescence (EL) region through a dry-etching process or an exposing-and-developing process;
depositing a metallic reflective layer onto the periodic grating structure through sputtering, so as to reproduce the periodic grating structure under the metallic reflective layer at the EL region;
depositing an insulation layer onto the metallic reflective layer through plasma chemical vapor deposition (PCVD);
depositing a transparent conductive oxide onto the insulation layer through sputtering so as to form an anode, and depositing an EL layer onto the transparent conductive oxide through evaporation; and
forming a transparent metallic cathode onto the EL layer through thermal evaporation.

2. The method according to claim 1 , wherein the organic electroluminescence device is a bottom-emission device, and the step of forming the periodic grating structure in the organic electroluminescence device comprises:
forming the periodic grating structure with a metallic cathode in accordance with the grating period, so as to form a periodic metallic grating structure; or
forming a cathode with a transparent conductive oxide, and forming the periodic metallic grating structure on a glass cover substrate above the transparent conductive oxide in a direction opposite to a light-emission direction in accordance with the grating period.

3. The method according to claim 2 , wherein the periodic metallic grating structure is separated from the transparent conductive oxide through a transparent insulation layer.

4. The method according to claim 2 , wherein the grating period is in direct proportion to the wavelength of the emergent light beam from the organic electroluminescence device.

5. The method according to claim 1 , wherein the organic electroluminescence device is a top-emission device, and the step of forming the period grating structure in the organic electroluminescence device comprises:
forming the periodic grating structure with a metallic anode in accordance with the grating period, so as to form a periodic metallic grating structure; or
forming an anode with a transparent conductive oxide, and arranging the periodic metallic grating structure below the transparent conductive oxide in a direction opposite to a light-emission direction in accordance with the grating period.

6. The method according to claim 5 , wherein the periodic metallic grating structure is separated from the transparent conductive oxide through a transparent insulation layer.

7. The method according to claim 5 , wherein the grating period is in direct proportion to the wavelength of the emergent light beam from the organic electroluminescence device.

8. The method according to claim 1 , wherein the grating period is in direct proportion to the wavelength of the emergent light beam from the organic electroluminescence device.

9. The method according to claim 1 , wherein the predetermined range of the light-emission peak of the organic electroluminescence device is 500 nm˜800 nm.

10. The method according to claim 1 , wherein the grating period is adjusted using the following equation:

k
light

⁡

(
λ
)

=

2
⁢

⁢
π

λ

⁢
sin
⁢

⁢
θ

=

k
sp

⁡

(
λ
)

±

2
⁢

⁢
π

Λ

⁢
m

,

where K light represents a wave vector of the emergent light beam; λ represents a wavelength of the emergent light beam; θ represents a measurement angle, Λ represents the grating period, m represents a magnitude, Ksp represents a wave vector of the SP and is calculated using the following equation:

k
sp

⁡

(
λ
)

=

2
⁢

⁢
π

λ

⁢

ɛ
1

⁢

ɛ
2

ɛ
1

+

ɛ
2

,

where ε1 and ε2 represent dielectric constants of a metal and a medium respectively.

Assignees

• Boe Technology Group Co Ltd
• Hefei Xinsheng Optoelectronics Technology Co Ltd

Inventors

• Wang Jun
• Zhao Ce
• Wang Dongfang
• Zhou Bin

Classifications

• H01L51/5275

  Electricity · mapped topic

• H01L27/3237

  Electricity · mapped topic

• H01L51/5225

  Electricity · mapped topic

• H01L51/5072

  Electricity · mapped topic

• H01L51/5209

  Electricity · mapped topic