Tensile separation of a semiconducting stack
US-2015069420-A1 · Mar 12, 2015 · US
US10580928B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10580928-B2 |
| Application number | US-201715671573-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 8, 2017 |
| Priority date | Jan 14, 2015 |
| Publication date | Mar 3, 2020 |
| Grant date | Mar 3, 2020 |
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A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.
Opening claim text (preview).
What is claimed is: 1. A photovoltaic device, comprising: an absorber layer having a back contact formed on the absorber layer, the back contact having an exposed surface free from a substrate; a transparent conductive layer formed on the absorber layer opposite the back contact; a top contact formed in contact with the transparent conductive layer; and a stressor layer formed over the top contact, wherein the stressor layer forms a superstrate. 2. The device as recited in claim 1 , wherein the top contact extends to a back surface of the photovoltaic device. 3. The device as recited in claim 2 , wherein the stressor layer includes an antireflection coating. 4. The device as recited in claim 2 , wherein the stressor layer includes an insulation layer. 5. The device as recited in claim 2 , wherein the stressor layer includes an encapsulation layer to encapsulate at least a portion of the device. 6. The device as recited in claim 2 , wherein the stressor layer is formed over the top contact and is opened to expose the top contact. 7. The device as recited in claim 1 , wherein the top contact extends perpendicularly to the absorber layer. 8. The device as recited claim 1 , wherein the stressor layer includes a metal. 9. The device as recited claim 1 , wherein the stressor layer includes an inorganic layer. 10. The device as recited claim 1 , wherein the stressor layer includes an adhesive film. 11. A photovoltaic device, comprising: an absorber layer having a back contact formed on the absorber layer, the back contact having an exposed surface free from a substrate; a transparent conductive layer formed on the absorber layer opposite the back contact; a top contact formed in contact with a portion of the transparent conductive layer; and a stressor layer formed over the top contact and a portion of the transparent conductive layer, wherein the stressor layer forms a superstrate. 12. The device as recited in claim 11 , wherein the top contact extends to a back surface of the photovoltaic device. 13. The device as recited in claim 12 , wherein the stressor layer includes an antireflection coating. 14. The device as recited in claim 12 , wherein the stressor layer includes an insulation layer. 15. The device as recited in claim 12 , wherein the stressor layer includes an encapsulation layer to encapsulate at least a portion of the device. 16. The device as recited in claim 12 , wherein the stressor layer is formed over the top contact and is opened to expose the top contact. 17. The device as recited in claim 11 , wherein the top contact extends perpendicularly to the absorber layer. 18. The device as recited claim 11 , wherein the stressor layer includes a metal. 19. The device as recited claim 11 , wherein the stressor layer includes an inorganic layer. 20. The device as recited claim 11 , wherein the stressor layer includes an adhesive film.
Photovoltaic [PV] energy · CPC title
Electricity · mapped topic
Cross-Sectional Technologies · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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