High-density metal-insulator-metal capacitors

Patent metadata

Field	Value
Publication number	US-10580581-B2
Application number	US-201715815308-A
Country	US
Kind code	B2
Filing date	Nov 16, 2017
Priority date	Nov 16, 2017
Publication date	Mar 3, 2020
Grant date	Mar 3, 2020

Abstract

Methods for fabricating a structure that includes a metal-insulator-metal (MIM) capacitor and structures that include a MIM capacitor. The MIM capacitor includes a layer stack with a first electrode, a second electrode, and a third electrode. The layer stack includes a pilot opening extending at least partially through at least one of the first electrode, the second electrode, and the third electrode. A dielectric layer is arranged over the metal-insulator-metal capacitor, and includes a via opening extending vertically to the pilot opening. A via is arranged in the via opening and the pilot opening. The pilot opening has a cross-sectional area that is less than a cross-sectional area of the via opening.

First claim

What is claimed is:

1. A structure comprising: a metal-insulator-metal capacitor including a layer stack with a first electrode, a second electrode, and a third electrode, the second electrode including a first portion and a second portion, the layer stack including a first pilot opening extending at least partially through the first portion of the second electrode, and the second portion of the second electrode arranged vertically between the first electrode and the third electrode; a collar arranged over the first portion of the second electrode; a first dielectric layer over the metal-insulator-metal capacitor, the first dielectric layer including a first via opening extending to the first pilot opening, and the first via opening extending at least partially through the collar; and a first via in the first via opening and the first pilot opening, wherein the first via opening has a cross-sectional area, and the first pilot opening has a cross-sectional area that is less than the cross-sectional area of the first via opening.

2. The structure of claim 1 further comprising:
a metallization level arranged beneath the layer stack; and
a second dielectric layer vertically arranged between the layer stack and the metallization level,
wherein the first pilot opening extends fully through the first portion of the second electrode and to a given depth into the second dielectric layer.

3. The structure of claim 1 wherein the collar is comprised of a conductor.

4. The structure of claim 1 wherein the first via opening extends fully through the collar.

5. The structure of claim 1 wherein the first via opening extends partially through the collar, and the first pilot opening extends in part through the collar.

6. The structure of claim 1 wherein the layer stack further includes a first capacitor dielectric and a second capacitor dielectric, the first capacitor dielectric is arranged between the first electrode and the second electrode, the second capacitor dielectric is arranged between the second electrode and the third electrode, and the first capacitor dielectric and the second capacitor dielectric are comprised of a high-k dielectric material.

7. The structure of claim 1 wherein the first electrode includes a first slot, the third electrode includes a second slot that overlaps with the first slot, and the collar, the first pilot opening, and the first via opening are arranged within a boundary of the first slot and a boundary of the second slot.

8. The structure of claim 1 wherein the layer stack includes a second pilot opening that extends at least partially through the first electrode, the first dielectric layer includes a second via opening extending to the second pilot opening, the second via opening has a cross-sectional area, and the second pilot opening has a cross-sectional area that is less than the cross-sectional area of the second via opening.

9. The structure of claim 8 further comprising:
a second via in the second via opening and the second pilot opening.

10. The structure of claim 9 wherein the second pilot opening extends completely through the third electrode, and the third electrode and the first electrode are connected by the second via.

11. The structure of claim 1 further comprising:
a routing level; and
a second dielectric layer on the routing level,
wherein the metal-insulator-metal capacitor is arranged vertically between the first dielectric layer and the second dielectric layer, and the first via opening terminates in the layer stack and above a top surface of the second dielectric layer.

12. A structure comprising:
a metal-insulator-metal capacitor including a layer stack with a first electrode, a second electrode, and a third electrode, the layer stack including a pilot opening extending completely through the third electrode and at least partially through the first electrode;
a first dielectric layer over the metal-insulator-metal capacitor, the first dielectric layer including a via opening extending to the pilot opening; and
a via in the via opening and the pilot opening,
wherein the third electrode and the first electrode are connected by the via, the via opening has a cross-sectional area, the pilot opening has a cross-sectional area that is less than the cross-sectional area of the via opening, the second electrode includes a slot, and the slot has a boundary that surrounds the pilot opening and the via opening.

13. The structure of claim 12 further comprising:
a metallization level arranged beneath the layer stack; and
a second dielectric layer vertically arranged between the layer stack and the metallization level in a vertical direction,
wherein the pilot opening extends fully through the first electrode and to a given depth into the second dielectric layer.

14. The structure of claim 12 wherein the layer stack further includes a first capacitor dielectric and a second capacitor dielectric, the first capacitor dielectric is arranged between the first electrode and the second electrode, the second capacitor dielectric is arranged between the second electrode and the third electrode, and the first capacitor dielectric and the second capacitor dielectric are comprised of a high-k dielectric material.

15. A method comprising:
forming a first electrode and a second electrode of a metal-insulator-metal capacitor;
depositing a conductor layer over the first electrode and the second electrode;
patterning the conductor layer to form a collar arranged over a first portion of the second electrode and a first pilot opening extending through the collar and at least partially through the second electrode;
after patterning the conductor layer, forming a dielectric layer over the collar;
forming a first via opening extending through the dielectric layer to the first pilot opening and at least partially through the collar; and
forming a first via in the first via opening and the first pilot opening,
wherein the first via opening has a cross-sectional area, and the first pilot opening has a cross-sectional area that is less than the cross-sectional area of the first via opening.

16. The method of claim 15 wherein patterning the conductor layer further comprises:
forming a third electrode arranged over a second portion of the second electrode.

17. The method of claim 16 wherein the first electrode includes a first slot, the third electrode includes a second slot that overlaps with the first slot, and the collar and the first pilot opening are arranged within a boundary of the first slot and a boundary of the second slot.

18. The method of claim 16 wherein patterning the conductor layer comprises:
forming a second pilot opening extending through the third electrode.

19. The method of claim 18 further comprising:
forming a second via opening extending through the dielectric layer to the second pilot opening; and
forming a second via in the second via opening and the second pilot opening,
wherein the second via opening has a cross-sectional area, and the second pilot opening has a cross-sectional area that is less than the cross-sectional area of the second via opening, the second electrode includes a slot that surrounds the second pilot opening, the second pilot opening is extended to and at least partially through the first electrode when forming the second via opening, and the second via connects the third electrode with the first electrode.

Assignees

• Globalfoundries Inc

Inventors

• Fox Iii Robert J
• Cheng Lili
• Augur Roderick A

Classifications

• H01G4/232

  electrically connecting two or more layers of a stacked or rolled capacitor · CPC title

• H01G4/005

  Electrodes · CPC title

• H01G4/33

  Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} · CPC title

• H01G4/012

  Form of non-self-supporting electrodes · CPC title

• H01G4/1209

  characterised by the ceramic dielectric material (H01G4/1272, H01G4/1281 take precedence) · CPC title