Cmos gate drive on array (goa) circuit structure and liquid crystal display panel
US-2018166039-A1 · Jun 14, 2018 · US
US10580378B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10580378-B2 |
| Application number | US-201715793697-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 25, 2017 |
| Priority date | May 16, 2017 |
| Publication date | Mar 3, 2020 |
| Grant date | Mar 3, 2020 |
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A shift register, gate drive circuit and display panel are provided. The shift register includes a latch unit, a NAND gate unit, a buffer unit and a switch unit. The latch unit, the NAND gate unit and the buffer unit are configured to produce a scanning driving signal and a scanning stopping signal. The latch unit is configured to control the switch unit to be turned on so as to output the scanning driving signal or the scanning stopping signal from the output terminal of the shift register, or control the switch unit to be turned off so as to enable the output terminal of the shift register to float.
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What is claimed is: 1. A shift register, comprising: a latch unit, a NAND gate unit and a buffer unit; wherein the latch unit has an input terminal for receiving a shift register signal, a clock signal terminal electrically connected to a first clock signal line, and an output terminal electrically connected to an input terminal of the NAND gate unit and an input terminal of a lower-level shift register separately; wherein the NAND gate unit has a clock signal terminal electrically connected to a second clock signal line, and an output terminal electrically connected to an input terminal of the buffer unit; an output terminal of the buffer unit is electrically connected to an output terminal of the shift register, wherein the latch unit, the NAND gate unit and the buffer unit are configured to produce a scanning driving signal and a scanning stopping signal; wherein the shift register further comprises a switch unit and the output terminal of the latch unit is further electrically connected to a control terminal of the switch unit; wherein the latch unit is configured to perform one of the following operations: controlling the switch unit to be turned on to output the scanning driving signal or the scanning stopping signal from the output terminal of the shift register, and controlling the switch unit to be turned off to enable the output terminal of the shift register to float; wherein in a first period, the switch unit is turned on to output the scanning driving signal from the shift register; wherein in a second period, the switch unit is turned on to output the scanning stopping signal from the shift register; and wherein in a third period, the switch unit is turned off to enable the output terminal of the shift register to float. 2. The shift register according to claim 1 , wherein the output terminal of the NAND gate unit is electrically connected to the input terminal of the buffer unit via the switch unit, wherein the output terminal of the NAND gate unit is electrically connected to an input terminal of the switch unit, and the input terminal of the buffer unit is electrically connected to an output terminal of the switch unit. 3. The shift register according to claim 2 , wherein the buffer unit comprises: a first inverter, a second inverter and a third inverter, wherein the first inverter has an input terminal electrically connected to the output terminal of the switch unit, and an output terminal electrically connected to an input terminal of the second inverter; and wherein the third inverter has an input terminal electrically connected to an output terminal of the second inverter, and an output terminal served as the output terminal of the shift register. 4. The shift register according to claim 1 , wherein the buffer unit comprises: a first inverter, a second inverter and a third inverter, wherein the first inverter has an input terminal electrically connected to the output terminal of the NAND gate unit, and an output terminal electrically connected to an input terminal of the switch unit; wherein the second inverter has an input terminal electrically connected to an output terminal of the switch unit, and an output terminal electrically connected to an input terminal of the third inverter; and wherein an output terminal of the third inverter is served as the output terminal of the shift register. 5. The shift register according to claim 1 , wherein the buffer unit comprises: a first inverter, a second inverter and a third inverter, wherein the first inverter has an input terminal electrically connected to the output terminal of the NAND gate unit, and an output terminal electrically connected to an input terminal of the second inverter; wherein an output terminal of the second inverter is electrically connected to an input terminal of the switch unit; and wherein the third inverter has an input terminal electrically connected to an output terminal of the switch unit, and an output terminal served as the output terminal of the shift register. 6. A shift register, comprising: a latch unit, a NAND gate unit, a buffer unit and a switch unit; wherein the latch unit has an input terminal for receiving a shift register signal, a clock signal terminal electrically connected to a first clock signal line, and an output terminal electrically connected to an input terminal of the NAND gate unit and an input terminal of a lower-level shift register separately; wherein the NAND gate unit has a clock signal terminal electrically connected to a second clock signal line, and an output terminal electrically connected to an input terminal of the buffer unit; wherein the output terminal of the latch unit is further electrically connected to a control terminal of the switch unit, the output terminal of the buffer unit is electrically connected to the output terminal of the shift register via the switch unit, wherein the output terminal of the buffer unit is electrically connected to an input terminal of the switch unit, and an output terminal of the switch unit is served as the output terminal of the shift register; wherein the latch unit, the NAND gate unit and the buffer unit are configured to produce a scanning driving signal and a scanning stopping signal; wherein the latch unit is configured to perform one of the following operations: controlling the switch unit to be turned on to output the scanning driving signal or the scanning stopping signal from the output terminal of the shift register, and controlling the switch unit to be turned off to enable the output terminal of the shift register to float; wherein in a first period, the switch unit is turned on to output the scanning driving signal from the shift register; wherein in a second period, the switch unit is turned on to output the scanning stopping signal from the shift register; and wherein in a third period, the switch unit is turned off to enable the output terminal of the shift register to float. 7. The shift register according to claim 6 , wherein the buffer unit comprises: a first inverter, a second inverter and a third inverter, wherein the first inverter has an input terminal electrically connected to the output terminal of the NAND gate unit, and an output terminal electrically connected to an input terminal of the second inverter; and wherein the third inverter has an input terminal electrically connected to an output terminal of the second inverter, and an output terminal electrically connected to the input terminal of the switch unit. 8. The shift register according to claim 1 , further comprising: a reset unit, wherein the reset unit has an input terminal electrically connected to a reset signal line and an output terminal electrically connected to a reset terminal of the latch unit. 9. The shift register according to claim 1 , wherein the switch unit comprises: a first NMOS transistor, wherein a gate of the first NMOS transistor is electrically connected to the output terminal of the latch unit, and wherein the first NMOS transistor has a double-gate structure. 10. The shift register according to claim 9 , wherein a width-to-length ratio W/L of the first NMOS transistor is in a range of 2.5 to 7.5. 11. The shift register according to claim 9 , wherein a width of the first NMOS transistor is in a range of 20 μm to 60 μm. 12. A gate drive circuit comprising n-level cascaded shift registers and n scanning lines, wherein n is a positive integer, and each one of the n-level cascaded shift registers comprises: a latch unit, a NAND gate unit and a buffer unit, wherein the latch unit has an input terminal for receiving a shift register signal, a clock signal terminal electrically connec
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