Surface light emitting semiconductor laser element

Patent metadata

Field	Value
Publication number	US-10578819-B2
Application number	US-201816012400-A
Country	US
Kind code	B2
Filing date	Jun 19, 2018
Priority date	May 19, 2003
Publication date	Mar 3, 2020
Grant date	Mar 3, 2020

Abstract

A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.

First claim

What is claimed is:

1. A surface light-emitting semiconductor laser element, comprising:
a substrate,
a lower reflector having a first-type semiconductor multi-layer structure disposed on the substrate;
an active layer disposed on the lower reflector;
a current confinement layer including a current injection region and an oxidation region disposed on the active layer;
an upper reflector having a second-type semiconductor multi-layer structure disposed on the current confinement layer;
a multi-layer structure disposed on the upper reflector, the multi-layer structure comprises a first layer defining a first opening and a second layer disposed on the first layer and defining a second opening, wherein a step-wise shape is formed by the first layer and the second layer in a cross-section view; and
a first electrode disposed on the multi-layer structure.

2. The surface light-emitting semiconductor laser element of claim 1 ,
wherein the first opening defined by the first layer has a first diameter in the cross-section view, and
wherein the second opening defined by the second layer has a second diameter greater than the first diameter in the cross-section view.

3. The surface light-emitting semiconductor laser element of claim 2 ,
wherein the first diameter is measured at an uppermost portion of the first layer, and
wherein the second diameter is measured at an uppermost portion of the second layer.

4. The surface light-emitting semiconductor laser element of claim 1 ,
wherein an aperture is formed by the first opening defined by the first layer and the second opening defined by the second layer, and
wherein light generated in the active layer propagates through the aperture.

5. The surface light-emitting semiconductor laser element of claim 1 , wherein the multi-layer structure comprises a plurality of semiconductor layers.

6. The surface light-emitting semiconductor laser element of claim 1 , wherein the first layer and the second layer of the multi-layer structure have different optical properties.

7. The surface light-emitting semiconductor laser element of claim 1 , wherein the multi-layer structure is configured to direct light as a concave lens.

8. The surface light-emitting semiconductor laser element of claim 1 , wherein the multi-layer structure is configured to focus light generated in the active layer.

9. The surface light-emitting semiconductor laser element of claim 1 , wherein the multi-layer structure is a complex refractive index distribution structure.

10. The surface light-emitting semiconductor laser element of claim 9 , wherein the complex refractive index distribution structure has a complex refractive index that changes in an outward direction from a center of the first opening defined by the first layer.

11. The surface light-emitting semiconductor laser element of claim 9 ,
wherein the first layer has a first refractive index,
wherein the second layer has a second refractive index, and
wherein the second refractive index is larger than the first refractive index.

12. The surface light-emitting semiconductor laser element of claim 1 , wherein the first layer and the second layer have different compositions.

13. The surface light-emitting semiconductor laser element of claim 1 ,
wherein the first layer is directly disposed on the upper reflector, and
wherein the first electrode is directly disposed on the second layer of the multi-layer structure.

14. The surface light-emitting semiconductor laser element of claim 1 , wherein the first electrode is a metallic layer surrounding the first opening defined by the first layer, and the second opening defined by the second layer.

15. The surface light-emitting semiconductor laser element of claim 14 ,
wherein the first opening defined by the first layer has a first sidewall surface,
wherein the second opening defined by the second layer has a second sidewall surface, and
wherein the first sidewall surface, and the second sidewall surface, are in direct contact with the metallic layer.

Assignees

• Sony Corp

Inventors

• Watanabe Yoshiaki
• Narui Hironobu
• Kuromizu Yuichi
• Yamauchi Yoshinori
• Tanaka Yoshiyuki

Classifications

• H01S5/18311

  using selective oxidation · CPC title

• H01S5/04254 Primary

  characterised by the shape · CPC title

• G02B6/4296 Primary

  coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources · CPC title

• H01S2301/203

  with at least one hole in the intensity distribution, e.g. annular or doughnut mode · CPC title

• H01S5/18394

  Apertures, e.g. defined by the shape of the upper electrode · CPC title