Method for producing ultrafine-grained crystalline materials via electron beam processing

Patent metadata

Field	Value
Publication number	US-10577684-B1
Application number	US-201715810895-A
Country	US
Kind code	B1
Filing date	Nov 13, 2017
Priority date	Nov 13, 2017
Publication date	Mar 3, 2020
Grant date	Mar 3, 2020

Abstract

A process is disclosed for restructuring crystalline grain structure and grain size of a material to produce an ultrafine-grain structure. An electron beam source is configured in relation to specific properties of a material forming a solid body to selectively irradiate a surface and a subsurface of that body with electrons at desired locations on the body and to create at least one selectively localized molten pool of defined size in the body. Heat is generated sufficiently rapidly by the beam source to create thermal gradients of sufficient magnitude to permit the body outside of the pool to act as a heat sink and rapidly cool the at least one molten pool, whereby an ultrafine-grain structure and grain size is produced by freezing grain growth upon occurrence of crystal nucleation.

First claim

We claim:

1. A process for restructuring crystalline grain structure and grain size of a material to produce an ultrafine-grain structure, comprising configuring an electron beam source in relation to specific properties of the material forming a solid body to selectively irradiate a surface and a subsurface of the body with electrons at desired locations on the body and to create at least one selectively localized molten pool of defined size in the body, and generating heat sufficiently rapidly to create thermal gradients of sufficient magnitude to permit the body outside of the pool to act as a heat sink and rapidly cool the at least one molten pool to produce the ultrafine-grain structure and grain size by freezing grain growth to an ultrafine structure upon occurrence of crystal nucleation.

2. The process of claim 1 , wherein the solid body is comprised of a metal, a metal alloy, a ceramic, a semiconductor or a composite material.

3. The process of claim 1 , wherein the body is comprised of powder material, crystalline material or amorphous material.

4. The process of claim 3 , wherein the crystalline material is one of single-crystalline and polycrystalline.

5. The process of claim 3 , wherein the powder material is comprised of a packed powder bed.

6. The process of claim 1 , wherein the body is moveable relative to the electron beam source.

7. The process of claim 6 , wherein the relative movement between the electron beam source and the body occurs by magnetic steering of the electron beam source or mechanical movement of the body so as to selectively deposit a desired energy at a target area of the body.

8. The process of claim 1 , wherein the electron beam source is accelerated by a superconducting linear electron accelerator.

9. The process of claim 1 , wherein the process is an additive manufacturing process.

10. The process of claim 9 , further comprising adding another material to the body after the at least one molten pool has solidified into the ultrafine-grained structure so that the electron beam source, once again configured in relation to specific properties of the another material, is able to selectively bombard a surface and optionally a subsurface of the another material to create at least one another selectively localized molten pool in the another material and generate thermal gradients sufficient to permit the another material outside of the pool to rapidly cool the another molten pool to produce an ultrafine-grain layer.

11. The process of claim 10 , further comprising adding another ultrafine-grain layer or a coarse-grain layer to the body.

12. The process of claim 11 , further comprising adding coarse-grain layers to the body to produce a near-net shape article.

13. The process of claim 12 , further comprising alternating the ultrafine-grain layers with the coarse-grain layers in the near-net shape article.

14. The process of claim 1 , wherein the ultrafine grain structure is characterized by grain sizes from about 10 nm to 1000 nm.

15. The process of claim 1 , wherein the thermal gradients are at least 1,000 K/mm.

16. The process of claim 1 , wherein the rapid cooling of the molten pool occurs at cooling rates of at least 8,000 K/s.

17. The process of claim 1 , wherein the body having the produced ultrafine-grain structure has anisotropic properties.

Assignees

• Mainstream Eng Corporation

Inventors

• Reeves Ryan D
• Lasko Thomas M
• Hill Justin J

Classifications

• B29C64/153

  using layers of powder being selectively joined, e.g. by selective laser sintering or melting · CPC title

• B33Y10/00

  Processes of additive manufacturing · CPC title

• C22F1/183 Primary

  of titanium or alloys based thereon · CPC title

• C22C14/00

  Alloys based on titanium · CPC title

• B23K15/0086

  welding for purposes other than joining, e.g. build-up welding · CPC title