Process for the generation of metallic films

Patent metadata

Field	Value
Publication number	US-10570514-B2
Application number	US-201615779570-A
Country	US
Kind code	B2
Filing date	Nov 29, 2016
Priority date	Nov 30, 2015
Publication date	Feb 25, 2020
Grant date	Feb 25, 2020

Abstract

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.

First claim

The invention claimed is:

1. A process for preparing a metal film, comprising:
(a) depositing a metal-containing compound from the gaseous state onto a solid substrate; and
(b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state or in solution,
wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical,
wherein the carbene is a compound of formula (I), (II), (IVa), (IVb), (Va) or (Vb);

wherein R is hydrogen, an alkyl, alkenyl, aryl, or silyl group
X is C, Si, or P,
Y is S, NR, or CR 2 ,
Z is nothing, H, alkyl, halogen, an amine, PR 2 or a boron species, and
n is 0, 1 or 2.

2. The process according to claim 1 , wherein the reducing agent is a compound of formula (Ia), (Ib), (Ic), (Id), (Ie), or (If):

3. The process according to claim 1 , wherein the reducing agent is a compound of formula (III):

4. The process according to claim 1 , wherein the reducing agent is a compound of formula (IVa) or a compound of formula (IVb):

5. The process according to claim 1 , wherein the reducing agent is a compound of formula (Va) or a compound of formula (Vb):

6. The process according to claim 1 , wherein the reducing agent has a vapor pressure of at least 0.1 mbar at 200° C.

7. The process according to claim 1 , wherein (a) and (b) are successively performed at least twice.

8. The process according to claim 1 , wherein the metal-containing compound comprises Ti, Ta, Mn, Mo, W, or Al.

9. The process according to claim 1 , wherein the temperature does not exceed 350° C.

Assignees

• Basf Se

Inventors

• Abels Falko
• Schweinfurth David Dominique
• Matos Karl
• Loeffler Daniel
• Ahlf Maraike
• Blasberg Florian
• Schaub Thomas
• Spielmann Jan
• Kirste Axel
• Gaspar Boris

Classifications

• C07F9/52

  Halophosphines · CPC title

• C23C16/06

  characterised by the deposition of metallic material · CPC title

• C07F7/10

  containing nitrogen {having a Si-N linkage} · CPC title

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/18

  from metallo-organic compounds · CPC title