Single-crystal diamond, tool using same, and method of producing single-crystal diamond

Patent metadata

Field	Value
Publication number	US-10569317-B2
Application number	US-201615753241-A
Country	US
Kind code	B2
Filing date	Oct 14, 2016
Priority date	Oct 19, 2015
Publication date	Feb 25, 2020
Grant date	Feb 25, 2020

Abstract

A single-crystal diamond includes a pair of main surfaces facing each other, an impurity concentration being changed along a first direction in each of the main surfaces.

First claim

The invention claimed is:

1. A single-crystal diamond comprising a pair of main surfaces facing each other,
an impurity concentration being changed along a first direction in each of the main surfaces, wherein
the single-crystal diamond has an ion implantation layer at a side surface along a second direction, and
the second direction is direction orthogonal to the first direction,
the single crystal diamond includes the ion implantation layer, an impurity high concentration region, and an impurity low concentration region each extending along the second direction in a form of a strip disposed adjacent to one another in this order,
the impurity high concentration region is a region having an impurity concentration falling within a range of a maximum value to 60% of the maximum value and has a width falling within a range of more than or equal to 0.5 μm to less than or equal to 500 μm,
the impurity low concentration region is a region having an impurity concentration of less than 60% of the maximum value,
the impurity concentration of the single-crystal diamond ranges from more than or equal to 10 ppb to less than or equal to 10000 ppm,
the impurity concentration has cyclicity of the impurity high concentration region and the impurity low concentration region along the first direction, a distance of one cycle in each of the main surfaces is more than or equal to 0.1 μm and less than or equal to 1000 μm.

2. The single-crystal diamond according to claim 1 , wherein in each of the main surfaces, the impurity concentration is substantially uniform along the second direction.

3. The single-crystal diamond according to claim 1 , wherein in each of the main surfaces, the first direction and the second direction are different in crystal orientation.

4. The single-crystal diamond according to claim 1 , wherein the impurity concentration has a centrosymmetry along the first direction.

5. The single-crystal diamond according to claim 1 , wherein angles of the side surface relative to each of the main surfaces are more than or equal to 55° and less than or equal to 125°.

6. The single-crystal diamond according to claim 1 , wherein the impurity includes at least one element selected from a group consisting of nitrogen, boron, aluminum, silicon, phosphorus, and sulfur.

7. A tool comprising the single-crystal diamond recited in claim 1 .

8. The tool according to claim 7 , wherein
the tool is a cutting bite, and
an amount of change of the impurity concentration of the single-crystal diamond in a flank face of the cutting bite is smaller than an amount of change of the impurity concentration of the single-crystal diamond in a rake face of the cutting bite.

9. The tool according to claim 7 , wherein
the tool is a cutting bite, and
in a rake face of the cutting bite, the cutting bite has a relation to cancel out a wear rate difference originating from a plane orientation difference and a wear rate difference originating from an impurity concentration difference.

10. The tool according to claim 7 , wherein
the tool is a wire drawing die, and
a through hole is formed to extend between the pair of main surfaces of the single-crystal diamond facing each other, along a direction perpendicular to each of the main surfaces of the single-crystal diamond.

11. The tool according to claim 7 , wherein
the tool is a wire drawing die, and
in a direction parallel to each of the main surfaces of the single-crystal diamond, the wire drawing die has a relation to cancel out a wear rate difference originating from a plane orientation difference and a wear rate difference originating from an impurity concentration difference.

12. A method of producing the single-crystal diamond recited in claim 1 , the method comprising:
obtaining, by a vapor deposition method, a synthetic single-crystal diamond in which an impurity concentration is changed along a crystal growth direction; and
cutting the synthetic single-crystal diamond in a direction in which the impurity concentration is changed, thereby obtaining the single-crystal diamond of claim 1 .

Assignees

• Sumitomo Electric Industries
• Sumitomo Electric Hardmetal Corp

Inventors

• Nishibayashi Yoshiki
• Tatsumi Natsuo
• Nohara Takuya
• Kobayashi Yutaka
• Ueda Akihiko

Classifications

• C23C16/56

  After-treatment · CPC title

• B21C3/02

  Dies; Selection of material therefor; Cleaning thereof · CPC title

• B23B27/20

  with diamond bits {or cutting inserts} · CPC title

• C30B25/02

  Epitaxial-layer growth · CPC title

• B21C3/025 Primary

  comprising diamond parts · CPC title