Indium gallium nitride red light emitting diode and method of making thereof

Patent metadata

Field	Value
Publication number	US-10566499-B2
Application number	US-201916512735-A
Country	US
Kind code	B2
Filing date	Jul 16, 2019
Priority date	Oct 24, 2016
Publication date	Feb 18, 2020
Grant date	Feb 18, 2020

Abstract

A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.

First claim

What is claimed is:

1. A light emitting diode, comprising:
an n-doped portion;
a p-doped portion; and
a light emitting region located between the n-doped portion and a p-doped portion, the light emitting region comprising a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 610 and 650 nm under electrical bias thereacross;
wherein:
the light emitting diode comprises a micro-light emitting diode having a lateral dimension of 100 microns or less; and
the light emitting diode emits the light at the peak wavelength between 610 and 650 nm under electrical bias thereacross having an external quantum efficiency of at least 2% for current densities of 2 A/cm 2 or less.

2. The light emitting diode of claim 1 , wherein the light emitting region further comprises:
a III-nitride layer located on the light-emitting indium gallium nitride layer; and
a GaN barrier layer located on the III-nitride layer.

3. The light emitting diode of claim 1 , wherein the light emitting diode emits the light at the peak wavelength between 610 and 650 nm under electrical bias thereacross having the external quantum efficiency of at least 2% for current densities below 1 A/cm 2 .

4. The light emitting diode of claim 1 , wherein the light emitting diode emits the light at the peak wavelength between 610 and 650 nm under electrical bias thereacross having the full width half maximum of 100 nm or less.

5. The light emitting diode of claim 1 , wherein the light emitting diode comprises a red-light emitting diode which is located in a display device.

6. The display device claim 5 , further comprising a backplane.

7. The display device claim 6 , wherein the red-light emitting diode is located on the backplane.

8. The display device claim 7 , further comprising a green-light emitting light emitting diode located on the backplane, and a blue-light emitting diode located on the backplane.

9. The display device claim 5 , wherein the display device comprises an in-eye projection device comprising the light emitting diode as a single red sub-pixel.

10. The display device claim 5 , wherein the display device comprises a monocolor display device.

11. The display device claim 5 , wherein the display device comprises a RGB monolithic display device.

Assignees

• Glo Ab

Inventors

• Danesh Fariba
• Schneider Jr Richard P
• Ren Fan
• Jansen Michael
• Gardner Nathan

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W90/00

  Package configurations · CPC title

• H01L33/32 Primary

  Electricity · mapped topic

• H01L2224/16225

  Electricity · mapped topic