Flow path member and semiconductor module

Patent metadata

Field	Value
Publication number	US-10566264-B2
Application number	US-201616062112-A
Country	US
Kind code	B2
Filing date	Dec 16, 2016
Priority date	Dec 18, 2015
Publication date	Feb 18, 2020
Grant date	Feb 18, 2020

Abstract

A flow path member may include silicon nitride ceramics. The flow path member may have an inlet port, an outlet port, and a flow path connected to the inlet port and the outlet port inside the flow path member. A plurality of needle-shaped crystals may be arranged on a surface of the flow path where the needle-shaped crystals intersect each other.

First claim

The invention claimed is:

1. A flow path member comprising silicon nitride ceramics, wherein the flow path member further comprises:
an inlet port;
an outlet port;
a flow path disposed inside the flow path member, and connected to the inlet port and the outlet port; and
a plurality of needle-shaped crystals disposed on a surface of the flow path, wherein the plurality of needle-shaped crystals intersect each other.

2. The flow path member according to claim 1 , wherein the plurality of needle-shaped crystals comprise an extending region, and a height of the extending region is equal to or greater than 10 μm.

3. The flow path member according to claim 1 , wherein ten or more needle-shaped crystals of the plurality of needle-shaped crystals have an aspect ratio of equal to or greater than 6 within an area of 2600 μm 2 on the surface of the flow path.

4. The flow path member according to claim 1 , wherein on the surface of the flow path, a number of needle-shaped crystals have an aspect ratio of equal to or greater than 6 that increases from the inlet port or the outlet port toward a center of the flow path.

5. The flow path member according to claim 1 , further comprising:
a cover portion placed on an object to be treated; and
a side wall portion connected to the cover portion;
wherein the plurality of needle-shaped crystals comprise an extending region having a height at the cover portion greater than a height of the extending region at the side wall portion.

6. The flow path member according to claim 1 , wherein a heat conductivity of the silicon nitride ceramics is equal to or greater than 50 W/(m·K).

7. The flow path member according to claim 1 , further comprising:
a cover portion placed on an object to be treated; and
a side wall portion connected to the cover portion;
wherein a strength ratio I s /I m on the surface of the flow path at the cover portion is less than a strength ratio I s /I m on the surface of the flow path at the side wall portion, where I m denotes peak strength which exists at a diffraction angle of 27.1±0.2° measured by an X-ray diffraction apparatus using a Kα ray of Cu, and I s denotes peak strength which exists at a diffraction angle of 29.7±0.2°.

8. A semiconductor module, comprising:
the flow path member according to claim 1 ;
a metal layer; and
a semiconductor device disposed on the metal layer.

Assignees

• Kyocera Corp
• Toshiba Materials Co Ltd

Inventors

• Ishimine Yuusaku
• Muneishi Takeshi
• Fujio Kazuhiko
• Fukuda Yoshiyuki
• Takanami Kentaro
• Shirai Takao

Classifications

• F28F2255/20

  with nanostructures · CPC title

• F28F21/04

  of ceramic; of concrete; of natural stone · CPC title

• F28F13/02

  by influencing fluid boundary (boundary-layer control in general F15D) · CPC title

• C04B35/587

  Fine ceramics · CPC title

• H05K7/20

  Modifications to facilitate cooling, ventilating, or heating · CPC title