Solar cell, manufacturing method therefor, semiconductor device, and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-10566144-B2
Application number	US-201816121269-A
Country	US
Kind code	B2
Filing date	Sep 4, 2018
Priority date	Oct 4, 2013
Publication date	Feb 18, 2020
Grant date	Feb 18, 2020

Abstract

Provided are a solar cell that can be manufactured by non-vacuum process and can have more excellent photoelectric conversion efficiency and a manufacturing method therefor as well as such a semiconductor device and a manufacturing method therefor. A solar cell, includes at least a first semiconductor layer and a second semiconductor layer. The first semiconductor layer includes metal oxide particles of 1 nm or more and 500 nm or less in average particle size and a compound having relative permittivity of 2 or more and 1,000 or less. For instance, the content of the organic compound in the first semiconductor layer is 10 mass % or more and 90 mass % or less.

First claim

The invention claimed is:

1. A solar cell, comprising at least a first semiconductor layer and a second semiconductor layer, wherein
the first semiconductor layer includes metal oxide particles of 1 nm or more and 500 nm or less in average particle size and a compound having relative permittivity of 5 or more, and
the compound includes at least one of a fluorine resin organic compound and a cyano group contained organic compound.

2. A solar cell, comprising at least a first semiconductor layer and a second semiconductor layer, wherein
the first semiconductor layer includes metal oxide particles of 1 nm or more and 500 nm or less in average particle size and an organic compound having relative permittivity of 5 or more and 1,000 or less,
content of the organic compound in the first semiconductor layer is 10 mass % or more and 90 mass % or less, and
wherein the compound includes at least one of a fluorine resin organic compound and a cyano group contained organic compound.

3. A solar cell, comprising at least a first semiconductor layer and a second semiconductor layer, wherein
the first semiconductor layer includes metal oxide particles of 1 nm or more and 500 nm or less in average particle size and an organic compound having relative permittivity of 10 or more and 200 or less,
content of the organic compound in the first semiconductor layer is 20 mass % or more and 70 mass % or less, and
wherein the compound includes at least one of a fluorine resin organic compound and a cyano group contained organic compound.

4. The solar cell according to claim 1 , wherein the metal oxide particles have a particle size of 1 nm or more and 100 nm or less.

5. The solar cell according to claim 1 , wherein the second semiconductor layer includes silicon.

6. The solar cell according to claim 1 , wherein the metal oxide particles include titanium oxide particles or zinc oxide particles.

7. The solar cell according to claim 1 , further comprising a junction interface layer that is located between the first semiconductor layer and the second semiconductor layer,
wherein the junction interface layer includes a compound having relative permittivity of 2 or more.

8. The solar cell according to claim 1 , wherein
the metal oxide particles include titanium oxide particles, and in an X-ray diffraction spectrum of the titanium oxide particles, a half width is 0.2 degrees or more and 5.0 degrees or less, the half width being obtained from a diffraction peak that appears at a diffraction angle 2θ of 24 degrees or more and 26 degrees or less when the titanium oxide particles are anatase-type and from a diffraction peak that appears at a diffraction angle 2θ of 26 degrees or more and 28 degrees or less when the titanium oxide particles are rutile-type.

9. The solar cell according to claim 8 , wherein the titanium oxide particles are anatase type.

10. The solar cell according to claim 1 , wherein the second semiconductor layer includes a silicon oxide film of 1 nm or more in thickness on a surface opposite to a surface facing the first semiconductor layer.

11. A method for manufacturing the solar cell according to claim 1 , comprising:
preparing application liquid including inorganic particles, a compound having relative permittivity of 2 or more, and one type or more of dispersant, wherein the inorganic particles include metal oxide particles or silicon particles, content of the inorganic particles in the application liquid is 0.1 mass % or more and 49.9 mass % or less, content of the compound in the application liquid is 0.1 mass % or more and 49.9 mass % or less, and content of the dispersant in the application liquid is 0.2 mass % or more and 99.8 mass % or less;
applying the prepared application liquid on a semiconductor layer or a substrate having an electrode; and
drying the applied application liquid and removing at least a part of the dispersant from the application liquid,
wherein the application liquid is dried at a temperature of 20° C. or more and 150° or less.

12. The solar cell according to claim 1 , wherein the first semiconductor layer includes the compound having relative permittivity of 5 or more and 200 or less.

13. The solar cell according to claim 12 , wherein the first semiconductor layer includes the compound having relative permittivity of 5 or more and 100 or less.

14. The solar cell according to claim 2 , wherein the first semiconductor layer includes the compound having relative permittivity of 5 or more and 200 or less.

15. The solar cell according to claim 14 , wherein the first semiconductor layer includes the compound having relative permittivity of 5 or more and 100 or less.

16. The solar cell according to claim 1 , wherein the first semiconductor layer includes the compound having relative permittivity of 10 or more and 200 or less.

17. The solar cell according to claim 16 , wherein the first semiconductor layer includes the compound having relative permittivity of 10 or more and 100 or less.

18. The solar cell according to claim 2 , wherein the first semiconductor layer includes the compound having relative permittivity of 10 or more and 200 or less.

19. The solar cell according to claim 18 , wherein the first semiconductor layer includes the compound having relative permittivity of 10 or more and 100 or less.

20. The solar cell according to claim 3 , wherein the first semiconductor layer includes the compound having relative permittivity of 10 or more and 100 or less.

Assignees

• Asahi Chemical Ind
• Univ Tohoku

Inventors

• Yumoto Toru
• Hirano Toshiyuki
• Sawamura Takahiro
• Watanabe Akira

Classifications

• H01G9/2045 Primary

  comprising a semiconductor electrode comprising elements of the fourth group of the Periodic Table with or without impurities, e.g. doping materials · CPC title

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• H01G9/2031 Primary

  comprising titanium oxide, e.g. TiO2 (H01G9/2036 takes precedence) · CPC title

• Y02E10/542

  Dye sensitized solar cells · CPC title