Resist pattern-forming method

Patent metadata

Field	Value
Publication number	US-10564546-B2
Application number	US-201715592373-A
Country	US
Kind code	B2
Filing date	May 11, 2017
Priority date	May 12, 2016
Publication date	Feb 18, 2020
Grant date	Feb 18, 2020

Abstract

A resist pattern-forming method includes applying a photoresist composition directly or indirectly on a front face of a substrate to form a photoresist film. A topcoat layer is laminated directly or indirectly on a front face of the photoresist film. The photoresist film is subjected to liquid immersion lithography in a presence of a liquid immersion liquid on a front face of the topcoat layer. Part of the topcoat layer is removed after subjecting the photoresist film to the liquid immersion lithography. The photoresist film is developed after the part of the topcoat layer is removed.

First claim

What is claimed is:

1. A resist pattern-forming method comprising:
applying a photoresist composition directly or indirectly on a front face of a substrate to form a photoresist film;
laminating a topcoat layer directly or indirectly on a front face of the photoresist film;
subjecting the photoresist film to liquid immersion lithography in a presence of a liquid immersion liquid on a front face of the topcoat layer;
removing part of the topcoat layer by a removing liquid comprising an organic solvent as a principal component after subjecting the photoresist film to the liquid immersion lithography such that other part of the topcoat layer is remained; and
starting to develop the photoresist film in a state where the other part of the topcoat layer is remained.

2. The resist-pattern-forming method according to claim 1 , wherein the removing liquid provides a feature that:
the topcoat layer is dissolved to remain so as to have a thickness of no less than 2 nm and no greater than 28 nm, provided that the photoresist film is formed on the front face of the substrate, the topcoat layer having a thickness of 30 nm is laminated on the front face of the photoresist film, and the removing liquid is brought into contact with the topcoat layer for 60 seconds.

3. The resist-pattern-forming method according to claim 1 , wherein
the topcoat layer comprises two or more kinds of polymers having different characteristics from one another, and
in removal of the part of the topcoat layer, a polymer among the two or more kinds of polymers that is localized on a front face side of the topcoat is at least partially removed.

4. The resist-pattern-forming method according to claim 3 , wherein
the two or more kinds of polymers comprise a water-repellent resin and an acidic resin, and
in the removal of the part of the topcoat layer, at least part of the water-repellent resin is removed.

5. The resist-pattern-forming method according to claim 4 , wherein the water-repellent resin is a fluorine-containing resin.

6. The resist-pattern-forming method according to claim 5 , wherein a mass percentage content of fluorine atom in the fluorine-containing resin is 0.1 to 30% by mass.

7. The resist-pattern-forming method according to claim 5 , wherein a mass percentage content of fluorine atom in the fluorine-containing resin is 5 to 25% by mass.

8. The resist-pattern-forming method according to claim 4 , wherein the acidic resin is at least one selected from the group consisting of a resin having an oxoacid group and a resin having a phenolic hydroxyl group.

9. The resist-pattern-forming method according to claim 1 , wherein the topcoat layer is laminated by applying a composition for forming the topcoat layer which comprises a solvent directly or indirectly on the front face of the photoresist film.

10. The resist-pattern-forming method according to claim 9 , wherein a solubility parameter value of the removing liquid is smaller than a solubility parameter value of the solvent in the composition for forming the topcoat layer.

11. The resist-pattern-forming method according to claim 1 , wherein the organic solvent comprises an ether solvent as a principal component.

12. A resist pattern-forming method comprising:
applying a photoresist composition directly or indirectly on a front face of a substrate to form a photoresist film;
laminating a topcoat layer directly or indirectly on a front face of the photoresist film;
subjecting the photoresist film to liquid immersion lithography in a presence of a liquid immersion liquid on a front face of the topcoat layer;
removing part of the topcoat layer after subjecting the photoresist film to the liquid immersion lithography such that other part of the topcoat layer is remained; and
starting to develop the photoresist film in a state where the other part of the topcoat layer is remained,
wherein
the topcoat layer comprises two or more kinds of polymers having different characteristics from one another and comprising a water-repellent resin and an acidic resin, and
in removal of the part of the topcoat layer, a polymer among the two or more kinds of polymers that is the water-repellent resin and is localized on a front face side of the topcoat, is at least partially removed.

13. The resist-pattern-forming method according to claim 12 , wherein the part of the topcoat layer is removed by a removing liquid.

14. The resist-pattern-forming method according to claim 13 , wherein the removing liquid provides a feature that:
the topcoat layer is dissolved to remain so as to have a thickness of no less than 2 nm and no greater than 28 nm, provided that the photoresist film is formed on the front face of the substrate, the topcoat layer having a thickness of 30 nm is laminated on the front face of the photoresist film, and the removing liquid is brought into contact with the topcoat layer for 60 seconds.

15. The resist-pattern-forming method according to claim 13 , wherein the removing liquid comprises an organic solvent as a principal component.

16. The resist-pattern-forming method according to claim 15 , wherein the organic solvent comprises an ether solvent as a principal component.

17. The resist-pattern-forming method according to claim 12 , wherein the topcoat layer is laminated by applying a composition for forming the topcoat layer which comprises a solvent directly or indirectly on the front face of the photoresist film.

18. The resist-pattern-forming method according to claim 17 , wherein a solubility parameter value of the removing liquid is smaller than a solubility parameter value of the solvent in the composition for forming the topcoat layer.

19. The resist-pattern-forming method according to claim 12 , wherein the water-repellent resin is a fluorine-containing resin.

20. The resist-pattern-forming method according to claim 19 , wherein a mass percentage content of fluorine atom in the fluorine-containing resin is 0.1 to 30% by mass.

21. The resist-pattern-forming method according to claim 19 , wherein a mass percentage content of fluorine atom in the fluorine-containing resin is 5 to 25% by mass.

22. The resist-pattern-forming method according to claim 12 , wherein the acidic resin is at least one selected from the group consisting of a resin having an oxoacid group and a resin having a phenolic hydroxyl group.

Assignees

• Jsr Corp

Inventors

• Sakurai Tomohiko
• OOSAWA Sousuke
• Nakashima Hiromitsu
• TERAYAMA Kousuke

Classifications

• G03F7/11 Primary

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• G03F7/2041

  in the presence of a fluid, e.g. immersion; using fluid cooling means · CPC title