Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US-2017203408-A1 · Jul 20, 2017 · US
US10562149B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10562149-B2 |
| Application number | US-201615273855-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 23, 2016 |
| Priority date | Sep 25, 2015 |
| Publication date | Feb 18, 2020 |
| Grant date | Feb 18, 2020 |
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A chemical-mechanical polishing pad comprising a polyurethane polishing layer having a high storage modulus at low temperatures and a low storage modulus at high temperatures is disclosed. For example, the disclosed pad embodiments may be fabricated from a thermoplastic polyurethane having a ratio of storage modulus at 25 degrees C. to storage modulus at 80 degrees C. of 50 or more. The thermoplastic polyurethane polishing layer may further optionally have a Shore D hardness of 70 or more, a tensile elongation of 320 percent or less, a storage modulus at 25 degrees C. of 1200 MPa or more, and/or a storage modulus at 80 degrees C. of 15 MPa or less.
Opening claim text (preview).
The invention claimed is: 1. A chemical-mechanical polishing pad comprising a thermoplastic polyurethane polishing layer having a ratio of storage modulus at 25 degrees C. to storage modulus at 80 degrees C. of 50 or more. 2. The pad of claim 1 , wherein the ratio is 100 or more. 3. The pad of claim 1 , wherein the thermoplastic polyurethane polishing layer also has a ratio of storage modulus at 40 degrees C. to storage modulus at 80 degrees C. of 50 or more. 4. The pad of claim 1 , wherein the thermoplastic polyurethane polishing layer has a Shore D hardness of 70 or more. 5. The pad of claim 1 , wherein the thermoplastic polyurethane polishing layer has a tensile elongation of 320 percent or less. 6. The pad of claim 1 , wherein the thermoplastic polyurethane polishing layer has a storage modulus at 25 degrees C. of 1000 MPa or more. 7. The pad of claim 1 , wherein the thermoplastic polyurethane polishing layer has a storage modulus at 80 degrees C. of 15 MPa or less. 8. The pad of claim 1 , wherein the pad is non-porous. 9. The pad of claim 1 , wherein the thermoplastic polyurethane has a molecular weight of less than about 100,000 g/mol. 10. The pad of claim 1 , wherein the pad has a density in a range from about 1.1 to about 1.2 g/cm3. 11. A method of chemical mechanical polishing a substrate, the method comprising: (a) contacting the substrate with the pad of claim 1 ; (b) moving the pad relative to the substrate; and (c) abrading the substrate to remove a portion of at least one layer from the substrate and thereby polish the substrate. 12. A method for fabricating the pad of claim 1 , the method comprising: (a) blending a thermoplastic polyurethane polymer resin mixture; (b) extruding the mixture to form a solid thermoplastic polyurethane sheet; (c) forming the polishing pad from the thermoplastic polyurethane sheet. 13. A method of chemical mechanical polishing a substrate; the method comprising: (a) contacting the substrate with the pad of claim 1 ; (b) moving the pad relative to the substrate; and (c) abrading the substrate to remove a portion of at least one layer from the substrate and thereby polish the substrate. 14. A chemical-mechanical polishing pad comprising a thermoplastic polyurethane polishing layer having a storage modulus at 25 degrees C. of 1200 MPa or more and a tensile elongation of 320 percent or less. 15. A chemical-mechanical polishing pad comprising a thermoplastic polyurethane polishing layer having a Shore D hardness of 70 or more, a tensile elongation of 320 percent or less, a storage modulus at 25 degrees C. of 1000 MPa or more, and a storage modulus at 80 degrees C. of 20 MPa or less. 16. A chemical-mechanical polishing pad comprising a non-porous thermoplastic polyurethane polishing layer having an average molecular weight of 100,000 g/mol or less, a Shore D hardness of 70 or more, a tensile elongation of 320 percent or less, a storage modulus at 25 degrees C. of 1200 MPa or more, and a storage modulus at 80 degrees C. of 15 MPa or less.
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