Memory device and rectifier

Patent metadata

Field	Value
Publication number	US-10559627-B2
Application number	US-201715707042-A
Country	US
Kind code	B2
Filing date	Sep 18, 2017
Priority date	Mar 22, 2017
Publication date	Feb 11, 2020
Grant date	Feb 11, 2020

Abstract

A memory device according to an embodiment includes a first conductive layer, a second conductive layer, a variable resistance layer disposed between the first conductive layer and the second conductive layer, and an organic molecular layer disposed between the variable resistance layer and the second conductive layer and containing organic molecules. Each of the organic molecules includes a first fused polycyclic unit having a first HOMO level, a second fused polycyclic unit having a second HOMO level higher in energy than the first HOMO level, and a third fused polycyclic unit disposed between the first fused polycyclic unit and the second fused polycyclic unit. The third fused polycyclic unit has a third HOMO level higher in energy than the first HOMO level and the second HOMO level.

First claim

What is claimed is:

1. A memory device comprising:
a first conductive layer;
a second conductive layer;
a variable resistance layer disposed between the first conductive layer and the second conductive layer; and
an organic molecular layer disposed between the variable resistance layer and the second conductive layer, the organic molecular layer containing organic molecules, wherein:
the organic molecules are selected from structures (1), (2), (3), and (4) listed below;
each of the organic molecules selected from structures (1), (2), (3), and (4) includes a first fused polycyclic aromatic hydrocarbon having a first HOMO (highest occupied molecular orbital) level, a second fused polycyclic aromatic hydrocarbon having a second HOMO level higher in energy than the first HOMO level, and a third fused polycyclic aromatic hydrocarbon disposed between the first fused polycyclic aromatic hydrocarbon and the second fused polycyclic aromatic hydrocarbon, the third fused polycyclic aromatic hydrocarbon has a third HOMO level higher in energy than the first HOMO level and the second HOMO level, and
FP1, FP2, FP3, L1, and L2 in structures (1), (2), (3), and (4) indicate the first fused polycyclic aromatic hydrocarbon, the second fused polycyclic aromatic hydrocarbon, the third fused polycyclic aromatic hydrocarbon, a first linker, and a second linker, respectively

2. The memory device according to claim 1 , wherein in structures (1), (2), (3), and (4) at least one substituent is bonded to at least one of the first fused polycyclic aromatic hydrocarbon, the second fused polycyclic aromatic hydrocarbon, and the third fused polycyclic aromatic hydrocarbon, and wherein the at least one substituent is selected from a halo group, a nitro group, an alkyl group partially containing a halo group, an amino group, an acyl group, a carbonyl group, a hydroxyl group, and a sulfo group.

3. The memory device according to claim 1 , wherein the first fused polycyclic aromatic hydrocarbon and the third fused polycyclic aromatic hydrocarbon are non-conjugated, and the second fused polycyclic aromatic hydrocarbon and the third fused polycyclic aromatic hydrocarbon are non-conjugated.

4. The memory device according to claim 1 , wherein the first linker and the second linker include a group selected from a thioether group, a dialkyl silyl ether group, an ether group, a phosphonic acid ester group, an ester group, and an azo group.

5. The memory device according to claim 1 , wherein the first conductive layer and the second conductive layer are made of same metal material.

6. The memory device according to claim 1 , wherein the organic molecular layer has a film thickness of 10 nm or smaller.

7. The memory device according to claim 1 , wherein the organic molecular layer contains organic molecules of structure (1).

8. The memory device according to claim 1 , wherein the organic molecular layer contains organic molecules of structure (2).

9. The memory device according to claim 1 , wherein the organic molecular layer contains organic molecules of structure (3).

10. The memory device according to claim 1 , wherein the organic molecular layer contains organic molecules of structure (4).

11. A rectifier comprising:
a first conductive layer;
a second conductive layer; and
an organic molecular layer disposed between the first conductive layer and the second conductive layer, and the organic molecular layer containing organic molecules, wherein:
the organic molecules are selected from structures (1), (2), (3), and (4) listed below;
each of the organic molecules selected from structures (1), (2), (3), and (4) includes a first fused polycyclic aromatic hydrocarbon having a first HOMO (highest occupied molecular orbital) level, a second fused polycyclic aromatic hydrocarbon having a second HOMO level higher in energy than the first HOMO level, and a third fused polycyclic aromatic hydrocarbon disposed between the first fused polycyclic aromatic hydrocarbon and the second fused polycyclic aromatic hydrocarbon, the third fused polycyclic aromatic hydrocarbon has a third HOMO level higher in energy than the first HOMO level and the second HOMO level, and
FP1, FP2, FP3, L1, and L2 in structures (1), (2), (3), and (4) indicate the first fused polycyclic aromatic hydrocarbon, the second fused polycyclic aromatic hydrocarbon, the third fused polycyclic aromatic hydrocarbon, a first linker, and a second linker, respectively

12. The rectifier according to claim 11 , wherein in structures (1), (2), (3), and (4) at least one substituent is bonded to at least one of the first fused polycyclic aromatic hydrocarbon, the second fused polycyclic aromatic hydrocarbon, and the third fused polycyclic aromatic hydrocarbon, and wherein the at least one substituent is selected from a halo group, a nitro group, an alkyl group partially containing a halo group, an amino group, an acyl group, a carbonyl group, a hydroxyl group, and a sulfo group.

13. The rectifier according to claim 11 , wherein the first fused polycyclic aromatic hydrocarbon and the third fused polycyclic aromatic hydrocarbon are non-conjugated, and the second fused polycyclic aromatic hydrocarbon and the third fused polycyclic aromatic hydrocarbon are non-conjugated.

14. The rectifier according to claim 11 , wherein the first linker and the second linker include a group selected from a thioether group, a dialkyl silyl ether group, an ether group, a phosphonic acid ester group, an ester group, and an azo group.

15. The rectifier according to claim 11 , wherein the first conductive layer and the second conductive layer are made of same metal material.

16. The rectifier according to claim 11 , wherein the organic molecular layer has a film thickness of 10 nm or smaller.

17. The rectifier according to claim 11 , wherein the organic molecular layer contains organic molecules of structure (1).

18. The rectifier according to claim 11 , wherein the organic molecular layer contains organic molecules of structure (2).

19. The rectifier according to claim 11 , wherein the organic molecular layer contains organic molecules of structure (3).

20. The rectifier according to claim 11 , wherein the organic molecular layer contains organic molecules of structure (4).

Assignees

• Toshiba Memory Corp

Inventors

• Nakamura Kenji
• Nishizawa Hideyuki

Classifications

• G11C2013/0078

  Write using current through the cell · CPC title

• G11C13/004

  Reading or sensing circuits or methods · CPC title

• G11C2013/0073

  Write using bi-directional cell biasing · CPC title

• G11C13/0026

  Bit-line or column circuits · CPC title

• G11C2213/72

  Array wherein the access device being a diode · CPC title