Metal ion detection equipment and metal ion detection method

Patent metadata

Field	Value
Publication number	US-10557795-B2
Application number	US-201615369353-A
Country	US
Kind code	B2
Filing date	Dec 5, 2016
Priority date	Aug 31, 2016
Publication date	Feb 11, 2020
Grant date	Feb 11, 2020

Abstract

A metal ion detection equipment and a metal ion detection method are provided. The metal ion detection equipment includes a porous silicon resonant cavity structure, an electrochemical device and a spectrum detecting device. A sample solution permeates into the porous silicon resonant cavity structure. A to-be-detected metal ion of the sample solution in the porous silicon resonant cavity structure is reduced into a to-be-detected metal by the electrochemical device. The spectrum detecting device detects a spectral variation of a reflective light from the porous silicon resonant cavity structure.

First claim

What is claimed is:

1. A metal ion detection equipment, comprising:
a porous silicon resonant cavity structure, wherein a sample solution permeates into the porous silicon resonant cavity structure;
an electrochemical device, reducing a to-be-detected metal ion of the sample solution in the porous silicon resonant cavity structure into a to-be-detected metal, wherein the electrochemical device comprises:
a reaction chamber, configured to load the sample solution;
a working electrode and a counter electrode, disposed in the reaction chamber, wherein the porous silicon resonant cavity structure is disposed on the working electrode; and
a potentiostat, connected to the working electrode and the counter electrode; and
a spectrum detecting device, detecting a spectral variation of a reflective light from the porous silicon resonant cavity structure.

2. The metal ion detection equipment according to claim 1 , wherein the porous silicon resonant cavity structure comprises a first bragg reflector, a second bragg reflector, and a defect layer located between the first bragg reflector and the second bragg reflector, wherein the first bragg reflector and the second bragg reflector both comprise a plurality of low refractive index layers and a plurality of high refractive index layers, and the low refractive index layer and the high refractive index layer are arranged alternately.

3. The metal ion detection equipment according to claim 2 , wherein a thickness of the low refractive index layer is 100 nm to 200 nm.

4. The metal ion detection equipment according to claim 2 , wherein a thickness of the high refractive index layer is 50 nm to 100 nm.

5. The metal ion detection equipment according to claim 2 , wherein a ratio of a thickness of the defect layer to a thickness of the high refractive index layer is 1.5 to 2.5.

6. The metal ion detection equipment according to claim 2 , wherein a refractive index of the low refractive index layer is 1.1 to 1.3.

7. The metal ion detection equipment according to claim 2 , wherein a refractive index of the high refractive index layer is 1.5 to 1.7.

8. The metal ion detection equipment according to claim 2 , wherein a refractive index of the defect layer is 1.5 to 1.7.

9. The metal ion detection equipment according to claim 1 , wherein the electrochemical device further comprises a reference electrode, and the reference electrode disposed in the reaction chamber and connected to the potentiostat.

10. A metal ion detection method, comprising:
reducing a to-be-detected metal ion of a sample solution in a porous silicon resonant cavity structure into a to-be-detected metal, wherein an electrochemical device is configured to reduce the to-be-detected metal ion into the to-be-detected metal, and the electrochemical device comprises:
a reaction chamber, configured to load the sample solution;
a working electrode and a counter electrode, disposed in the reaction chamber, wherein the porous silicon resonant cavity structure is disposed on the working electrode; and
a potentiostat, connected to the working electrode and the counter electrode; and
detecting a spectral variation of a reflective light from the porous silicon resonant cavity structure.

11. The metal ion detection method according to claim 10 , wherein the porous silicon resonant cavity structure comprises a first bragg reflector, a second bragg reflector, and a defect layer located between the first bragg reflector and the second bragg reflector, wherein the first bragg reflector and the second bragg reflector both comprise a plurality of low refractive index layers and a plurality of high refractive index layers, and the low refractive index layer and the high refractive index layer are arranged alternately.

12. The metal ion detection method according to claim 10 , wherein the sample solution comprises a variety of metal ions, and before the to-be-detected metal ion is reduced into the to-be-detected metal, the metal ion detection method further comprises using the electrochemical device to reduce a metal ion with a reduction potential higher than a reduction potential of the to-be-detected metal ion into a metal.

13. The metal ion detection method according to claim 12 , wherein the step of reducing the metal ion with the reduction potential higher than the reduction potential of the to-be-detected metal ion into the metal comprises:
rendering the sample solution to permeate into the porous silicon resonant cavity structure; and
applying a voltage on the working electrode and the counter electrode, so that the metal ion with the reduction potential higher than the reduction potential of the to-be-detected metal ion is reduced into the metal.

14. The metal ion detection method according to claim 10 , wherein the step of reducing the to-be-detected metal ion of the sample solution in the porous silicon resonant cavity structure into the to-be-detected metal comprises:
rendering the sample solution to permeate into the porous silicon resonant cavity structure; and
applying a voltage on the working electrode and the counter electrode, so that the to-be-detected metal ion is reduced into the to-be-detected metal.

15. The metal ion detection method according to claim 12 , wherein after the metal ion with the reduction potential higher than the reduction potential of the to-be-detected metal ion is reduced into the metal, and before the to-be-detected metal ion is reduced into the to-be-detected metal, the metal ion detection method further comprises detecting a spectrum of the reflective light from the porous silicon resonant cavity structure.

16. The metal ion detection method according to claim 10 , wherein a spectrum analyzer is configured to detect the spectral variation.

17. The metal ion detection method according to claim 10 , wherein the step of detecting the spectral variation of the reflective light from the porous silicon resonant cavity structure comprises:
providing an incident light to the porous silicon resonant cavity structure with the to-be-detected metal reduced therein, so as to produce a reflective light signal; and
receiving the reflective light signal from the porous silicon resonant cavity structure.

18. The metal ion detection method according to claim 10 , wherein the method of detecting the spectral variation is an in-situ detection or an ex-situ detection.

Assignees

• Univ Nat Tsing Hua

Inventors

• Tseng Fan-Gang
• Wu Jen-Kuei
• Lai Jian Ren

Classifications

• G01N2201/12

  Circuits of general importance; Signal processing · CPC title

• G01N21/4738 Primary

  Diffuse reflection (precedence is given to G01N21/55 - G01N21/57 if specular component is taken into consideration), e.g. also for testing fluids, fibrous materials · CPC title

• B01J2219/0801

  Controlling the process · CPC title

• B01J2219/0809

  employing two or more electrodes · CPC title

• B01J2219/0877

  Liquid · CPC title