Semiconductor component and illumination device

Patent metadata

Field	Value
Publication number	US-10553748-B2
Application number	US-201515307815-A
Country	US
Kind code	B2
Filing date	May 22, 2015
Priority date	May 27, 2014
Publication date	Feb 4, 2020
Grant date	Feb 4, 2020

Abstract

A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

First claim

The invention claimed is:

1. A semiconductor component comprising:
a first semiconductor chip configured to generate a primary radiation having a first peak wavelength; and
a first radiation conversion element arranged on the first semiconductor chip, the first radiation conversion element comprising:
a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength; and
a substrate which is transmissive to the primary radiation and serves for mechanically stabilizing the quantum structure;
wherein the first radiation conversion element has a coupling-out structure that is a structured growth area of the substrate disposed on a side of the substrate facing the quantum structure, wherein the substrate is a growth substrate for epitaxial deposition of the quantum structure and is arranged between the first semiconductor chip and the quantum structure.

2. The semiconductor component according to claim 1 , wherein the first radiation conversion element contains AlxInyGa1-x-yN, AlxInyGa1-x-yP or AlxInyGa1-x-yAs.

3. The semiconductor component according to claim 1 , wherein the first peak wavelength is less than the second peak wavelength.

4. The semiconductor component according to claim 1 , wherein the semiconductor component comprises an emitter configured to emit radiation having a third peak wavelength.

5. The semiconductor component according to claim 4 , wherein a reflector layer is arranged in a beam path between the emitter and the first radiation conversion element.

6. The semiconductor component according to claim 4 , wherein the emitter is a second radiation conversion element.

7. The semiconductor component according to claim 6 , wherein the first radiation conversion element and the second radiation conversion element are arranged alongside one another or one above the other on the first semiconductor chip.

8. The semiconductor component according to claim 6 , wherein the semiconductor component comprises a second semiconductor chip, and wherein the second radiation conversion element is arranged on the second semiconductor chip.

9. The semiconductor component according to claim 6 , wherein the second radiation conversion element comprises a phosphor embedded into an encapsulation of the first semiconductor chip.

10. The semiconductor component according to claim 4 , wherein the emitter is a second semiconductor chip, and wherein the second semiconductor chip has an active region for generating the third peak wavelength.

11. The semiconductor component according to claim 10 ,
wherein the first semiconductor chip and the second semiconductor chip are embedded into a reflector layer,
wherein a body that is radiation-transmissive to the third peak wavelength is arranged on the second semiconductor chip,
wherein the reflector layer adjoins the radiation-transmissive body and the first radiation conversion element, and
wherein the radiation-transmissive body and the first radiation conversion element are at least regionally free of the reflector layer on an emission side of the semiconductor component.

12. The semiconductor component according to claim 1 , wherein a dielectric coating is arranged on the first radiation conversion element, and wherein the dielectric coating has a wavelength-selective transmission.

13. The semiconductor component according to claim 1 , wherein a scattering layer is arranged on the first radiation conversion element.

14. The semiconductor component according to claim 1 , wherein the quantum structure is arranged on a side of the substrate facing the first semiconductor chip.

15. An illumination device comprising:
a connection carrier; and
at least one semiconductor component according to claim 1 , wherein the at least one semiconductor component is arranged on the connection carrier.

16. The illumination device according to claim 15 , wherein the illumination device is designed for backlighting of a display device, for a projection, for a flashlight or for a spotlight/headlight.

17. A semiconductor component comprising:
a semiconductor chip configured to generate a primary radiation having a first peak wavelength;
a first radiation conversion element arranged on the semiconductor chip, wherein the first radiation conversion element comprises a first quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength, wherein the first radiation conversion element comprises a first substrate that is transmissive to the primary radiation, wherein the first radiation conversion element has a coupling-out structure that is one of a structured growth area of the first substrate disposed on a side of the first substrate facing the first quantum structure, or a roughening of the first substrate disposed on a side of the first substrate facing away from the first quantum structure; and
an emitter for emitting radiation having a third peak wavelength, the emitter being a second radiation conversion element,
wherein the first and second radiation conversion elements are arranged one above the other on the semiconductor chip, and
wherein the second radiation conversion element comprises a second quantum structure arranged on a second substrate.

18. The semiconductor component according to claim 17 , wherein the semiconductor component comprises a reflector layer, the reflector layer directly adjoining the semiconductor chip and the first radiation conversion element.

19. The semiconductor component according to claim 18 , wherein the reflector layer adjoins the second radiation conversion element.

20. The semiconductor component according to claim 1 , wherein the quantum structure comprises a plurality of quantum layers and barrier layers stacked one above the other in a vertical direction, the vertical direction extending perpendicular to an emission side of the semiconductor component.

21. The semiconductor component according to claim 1 , wherein the quantum structure and the substrate have the same lateral extent.

22. The semiconductor component according to claim 1 , wherein the substrate is a growth substrate for an epitaxial deposition of the quantum structure.

23. A semiconductor component comprising:
a semiconductor chip provided for generating a primary radiation having a first peak wavelength; and
a radiation conversion element arranged on the semiconductor chip and comprising a quantum structure and a substrate transmissive to the primary radiation, wherein the radiation conversion element has a coupling-out structure that is a structured growth area of the substrate disposed on a side of the substrate facing the quantum structure, wherein the substrate is a growth substrate for epitaxial deposition of the quantum structure and is arranged between first semiconductor chip and the quantum structure;
wherein the semiconductor chip comprises a carrier on which a semiconductor body comprising an active region is arranged;
wherein the active region is provided for generating the primary radiation;
wherein the carrier mechanically stabilizes the semiconductor body;
wherein the quantum structure is configured for converting the primary radiation at least partly into secondary radiation having a second peak wavelength;
wherein the quantum structure comprises a plurality of quantum layers between which barrier layers are arranged, wherein the quantum layers and the barrier layers form a mu

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Bauer Adam
• Mönch Wolfgang
• Racz David
• Wittmann Michael
• Schulten Dominik
• Löffler Andreas

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/5363

  the connected ends being wedge-shaped · CPC title

• H10W72/536

  the connected ends being ball-shaped · CPC title

• H10W90/00 Primary

  Package configurations · CPC title