Method of manufacturing a ceramic metallization for ceramic metal transition

US10549371B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10549371-B2
Application numberUS-201615064653-A
CountryUS
Kind codeB2
Filing dateMar 9, 2016
Priority dateSep 20, 2013
Publication dateFeb 4, 2020
Grant dateFeb 4, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method of manufacture of a ceramic metallization for ceramic metal transition, and ceramic metal transition itself, for the use in low, medium and high-voltage techniques, which may avoid a brazing foil, and/or overcome problems with the use of thin brazing foils, and/or to make the manufacture easier, but also more effective, wherein, on top of the Ni-layer will be placed an Ag-layer as a third layer, and then the metal part will be laid on top and connected by brazing or tempering.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method of manufacturing a ceramic metallization for a ceramic metal transition for use with components of a low-, medium-, and/or high-voltage device, switch, or switching unit by which a ceramic body is connected to a metal part, the method comprising: covering a ceramic body, comprising a Al 2 O 3 material, with at least a first layer comprising MoMn and a second layer comprising Ni; placing a third layer comprising Ag on top of the second layer; laying the metal part on top of the third layer; and connecting the metal part to one or more of the first, second, and third layers at a connecting region, wherein the connecting comprises brazing, and the brazing comprises in-situ tempering under an inert gas environment, and wherein the connecting takes place at a temperature above an alloying point so as to provide an in-situ alloying process by diffusion of metals in the connecting region. 2. The method of claim 1 , wherein the ceramic body mainly comprises the Al 2 O 3 material. 3. The method of claim 1 , wherein the connecting connects the metal part to the ceramic body. 4. The method of claim 1 , wherein the first layer mainly comprises MoMn. 5. The method of claim 1 , wherein the first layer comprises tungsten. 6. The method of claim 1 , wherein the second layer mainly comprises Ni. 7. The method of claim 1 , wherein the third layer mainly comprises Ag. 8. The method of claim 1 , wherein the placing of the third layer is at least partially carried out galvanically. 9. The method of claim 1 , wherein the placing of the third layer is at least partially carried out by cold gas spraying. 10. A method of manufacturing a ceramic metallization for a ceramic metal transition for use with components of a low-, medium-, and/or high-voltage device, switch, or switching unit by which a ceramic body is connected to a metal part, the method comprising: covering a ceramic body, comprising a Al 2 O 3 material, with at least a first layer comprising MoMn and a second layer comprising Ni; placing a third layer comprising Ag on top of the second layer; laying the metal part on top of the third layer; and connecting the metal part to one or more of the first, second, and third layers at a connecting region, wherein the connecting comprises brazing, and the brazing comprises in-situ tempering under an active gas environment, and wherein the connecting takes place at a temperature above an alloying point so as to provide an in-situ alloying process by diffusion of metals in the connecting region. 11. A method of manufacturing a ceramic metallization for a ceramic metal transition for use with components of a low-, medium-, and/or high-voltage device, switch, or switching unit by which a ceramic body is connected to a metal part, the method comprising: covering a ceramic body, comprising a Al 2 O 3 material, with at least a first layer comprising MoMn and a second layer comprising Ni; placing a third layer comprising Ag on top of the second layer; laying the metal part on top of the third layer; and connecting the metal part to one or more of the first, second, and third layers at a connecting region, wherein the connecting comprises brazing, and the brazing comprises in-situ tempering under a hydrogen environment, and wherein the connecting takes place at a temperature above an alloying point so as to provide an in-situ alloying process by diffusion of metals in the connecting region.

Assignees

Inventors

Classifications

  • based on noble metals, e.g. silver · CPC title

  • including at least one metal alloy layer · CPC title

  • Alumina or aluminates · CPC title

  • for welded joints · CPC title

  • C04B37/026Primary

    consisting of metals or metal salts · CPC title

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What does patent US10549371B2 cover?
A method of manufacture of a ceramic metallization for ceramic metal transition, and ceramic metal transition itself, for the use in low, medium and high-voltage techniques, which may avoid a brazing foil, and/or overcome problems with the use of thin brazing foils, and/or to make the manufacture easier, but also more effective, wherein, on top of the Ni-layer will be placed an Ag-layer as a th…
Who is the assignee on this patent?
Abb Technology Ag, Abb Schweiz Ag
What technology area does this patent fall under?
Primary CPC classification C04B37/026. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Feb 04 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).