Solid-state image pickup device and method of driving the same

Patent metadata

Field	Value
Publication number	US-10546887-B2
Application number	US-201816100781-A
Country	US
Kind code	B2
Filing date	Aug 10, 2018
Priority date	Dec 5, 2012
Publication date	Jan 28, 2020
Grant date	Jan 28, 2020

Abstract

Imaging sensors, imaging apparatuses, and methods of driving an image sensor are provided. An image sensor can include a semiconductor substrate with a photoelectric conversion element and a charge-conversion element. The sensor can further include a capacitance switch. A charge accumulation element is located adjacent the photoelectric conversion element. At least a portion of the charge accumulation element overlaps a charge accumulation region of the photoelectric conversion element. The charge accumulation element is selectively connected to the charge-voltage conversion element by the capacitance switch.

First claim

What is claimed is:

1. An image sensor, comprising:
a semiconductor substrate, including:
a plurality of photoelectric conversion elements, which includes at least a first photoelectric conversion element and a second photoelectric conversion element;
a charge-voltage conversion element, wherein the charge-voltage conversion element is shared by the first photoelectric conversion element and the second photoelectric conversion element;
a first charge accumulation element, wherein at least a portion of the first charge accumulation element overlaps a charge accumulation region of the first photoelectric conversion element;
a second charge accumulation element, wherein at least a portion of the second charge accumulation element overlaps a charge accumulation region of the second photoelectric conversion element; and
a wiring layer, wherein
the wiring layer includes the first charge accumulation element and the second charge accumulation element,
each of the plurality of photoelectric conversion elements is configured to receive light from a first surface of the semiconductor substrate, and
the first charge accumulation element and the second charge accumulation element are on a second surface of the semiconductor substrate opposite to the first surface.

2. The image sensor of claim 1 , further comprising a first transfer transistor and a second transfer transistor, wherein
the charge-voltage conversion element is configured to:
receive a first electric charge from the first photoelectric conversion element via the first transfer transistor; and
receive a second electric charge from the second photoelectric conversion element via the second transfer transistor.

3. The image sensor of claim 1 , wherein the image sensor is a back illumination type image sensor in which the first photoelectric conversion element and the second photoelectric conversion element are between the first surface of the semiconductor substrate and the wiring layer.

4. The image sensor of claim 1 , further comprising a capacitance switch configured to selectively connect the first charge accumulation element and the second charge accumulation element to the charge-voltage conversion element.

5. The image sensor of claim 4 , wherein a capacitance of each of the first charge accumulation element and the second charge accumulation element is added to a capacitance of the charge-voltage conversion element based on the capacitance switch being closed.

6. The image sensor of claim 1 , further comprising a light shielding layer.

7. The image sensor of claim 6 , wherein
the first charge accumulation element is between the light shielding layer and the first photoelectric conversion element, and
the second charge accumulation element is between the light shielding layer and the second photoelectric conversion element.

8. The image sensor of claim 4 , wherein
each of the first charge accumulation element and the second charge accumulation element includes a first electrode and a second electrode, and
one of the first electrode or the second electrode is connected to the capacitance switch.

9. The image sensor of claim 8 , wherein at least one of the first electrode or the second electrode comprises a metal.

10. The image sensor of claim 8 , wherein at least one of the first electrode or the second electrode comprises polysilicon.

11. The image sensor of claim 1 , wherein
the charge-voltage conversion element is a floating diffusion region, and
each of the first charge accumulation element and the second charge accumulation element is a capacitor.

12. The image sensor of claim 1 , wherein
the image sensor is a front illumination type image sensor,
an image plane phase difference pixel includes the first photoelectric conversion element, and
the first charge accumulation element is a light shielding layer for the first photoelectric conversion element.

Assignees

• Sony Corp

Inventors

• Yamashita Kazuyoshi

Classifications

• H10W20/496

  Capacitor integral with wiring layers · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H01L27/14627

  Electricity · mapped topic

• H01L27/14612

  Electricity · mapped topic

• H01L27/14636

  Electricity · mapped topic