Semiconductor processing method

Patent metadata

Field	Value
Publication number	US-10546745-B2
Application number	US-201715844905-A
Country	US
Kind code	B2
Filing date	Dec 18, 2017
Priority date	Dec 18, 2017
Publication date	Jan 28, 2020
Grant date	Jan 28, 2020

Abstract

A method of processing semiconductor material includes applying an organosulfur solution to a top surface of a semiconductor material, the organosulfur solution having at least one organosulfur compound. The at least one organosulfur compound has at least one sulfur atom double bonded to a carbon atom and a pH of not less than 8. An organosulfur solution may be applied at temperatures above 25° C. to increase sulfur deposition rates and increase sulfur coverage on a surface of a semiconductor material.

First claim

What is claimed is:

1. A method of processing a semiconductor material, the method comprising:
applying a first organosulfur solution to a top surface of the semiconductor material, the organosulfur solution having at least one organosulfur compound wherein at least one sulfur atom is double bonded to a carbon atom, the organosulfur solution having a pH of not less than 8;
depositing a cap layer onto the semiconductor material after applying the first organosulfur solution; and
performing an annealing operation to diffuse sulfur located between the cap layer and the semiconductor material into the semiconductor material, wherein the annealing operation is performed at a temperature of at least 250° C. for at least 20 minutes.

2. The method of claim 1 , further comprising cleaning the top surface of the semiconductor material prior to applying the first organosulfur solution to the top surface of the semiconductor material.

3. The method of claim 1 , further comprising removing a native oxide from the top surface of the semiconductor material prior to applying the first organosulfur solution to the top surface of the semiconductor material.

4. The method of claim 1 , wherein the semiconductor material comprises either a III-V compound or a Si—Ge semiconductor material.

5. The method of claim 4 , wherein the semiconductor material comprises at least indium gallium arsenide (InGaAs).

6. The method of claim 1 , wherein the cap layer comprises a dielectric material.

7. The method of claim 1 , wherein the cap layer comprises a metal oxide.

8. The method of claim 1 , wherein depositing the cap layer further comprises depositing a plurality of dielectric layers, the plurality of dielectric layers comprising at least two of aluminum oxide (Al 2 O 3 ), hafnium dioxide (HfO 2 ), and silicon dioxide (SiO 2 ).

9. The method of claim 1 , further comprising removing the cap layer from the semiconductor material.

10. The method of claim 9 , wherein removing the cap layer from the semiconductor material further comprises performing an etching operation.

11. The method of claim 9 , wherein removing the cap layer from the semiconductor material further comprises performing a chemical etching operation.

12. The method of claim 1 , wherein the organosulfur solution contains a thiourea compound (R 1 R 2 N)(R 3 R 4 N)C═S wherein each of R 1 -R 4 is selected from the group consisting of hydrogen and a saturated alkane.

13. The method of claim 12 , wherein each of R 1 -R 4 is hydrogen.

14. The method of claim 1 , wherein the organosulfur solution contains a thioamide compound (R 1 R 2 N)(R 3 )C═S, wherein R 1 and R 2 are selected from the group consisting of hydrogen and saturated alkanes, and wherein R 1 is an aliphatic substituent.

15. The method of claim 14 , wherein the thioamide compound substituents R 1 -R 3 are as follows: R 1 =hydrogen, and R 2 =hydrogen, and R 3 =a methyl group.

16. The method of claim 1 , further comprising applying a second organosulfur solution to the top surface of the semiconductor material, wherein the second organosulfur solution is applied after the first organosulfur solution.

17. A method of processing a semiconductor material, the method comprising:
applying a first organosulfur solution to a top surface of the semiconductor material, the organosulfur solution having at least one organosulfur compound wherein at least one sulfur atom is double bonded to a carbon atom, the organosulfur solution having a pH of not less than 8;
depositing a cap layer onto the semiconductor material after applying the first organosulfur solution;
performing an annealing operation to diffuse sulfur located between the cap layer and the semiconductor material into the semiconductor material; and
removing the cap layer from the semiconductor material.

Assignees

• IBM

Inventors

• Lee Yun Seog
• De Souza Joel Pereira
• Sadana Devendra K
• Hopstaken Marinus

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/00 Primary

  Etching of wafers, substrates or parts of devices · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title