Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device

Patent metadata

Field	Value
Publication number	US-10541306-B2
Application number	US-201213610993-A
Country	US
Kind code	B2
Filing date	Sep 12, 2012
Priority date	Sep 12, 2012
Publication date	Jan 21, 2020
Grant date	Jan 21, 2020

Abstract

A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.

First claim

What is claimed is:

1. A method comprising:
providing a substrate;
forming a silicon carbide epitaxial structure on the substrate, the silicon carbide epitaxial structure having at least three layers, wherein at least one of the at least three layers is a P-type silicon carbide layer and another of the at least three layers is an N-type silicon carbide layer;
forming an intrinsic silicon carbide layer between the P-type silicon carbide layer and the N-type silicon carbide layer;
ion implanting a carbon vacancy reduction material into a surface of the silicon carbide epitaxial structure; and
annealing the silicon carbide epitaxial structure to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the silicon carbide epitaxial structure, thereby increasing an average carrier lifetime in the silicon carbide epitaxial structure.

2. The method of claim 1 wherein the carbon vacancy reduction material comprises at least one selected from a group consisting of Group V of a Periodic Table of the Elements.

3. The method of claim 2 wherein the carbon vacancy reduction material comprises nitrogen.

4. The method of claim 2 wherein the carbon vacancy reduction material comprises phosphorus.

5. The method of claim 1 wherein diffusing the carbon atoms substantially throughout the silicon carbide epitaxial structure at least partially fills carbon vacancies in a crystalline lattice of the silicon carbide epitaxial structure.

6. The method of claim 1 further comprising removing at least a portion of the silicon carbide epitaxial structure from the silicon carbide epitaxial structure after annealing the silicon carbide epitaxial structure.

7. The method of claim 6 wherein a carrier concentration of the carbon vacancy reduction material in the silicon carbide epitaxial structure after substantially removing at least a portion of the carbon vacancy reduction material is less than about 10 percent of a carrier concentration of any material in the silicon carbide epitaxial structure.

8. The method of claim 6 wherein a carrier concentration of the carbon vacancy reduction material in the silicon carbide epitaxial structure after substantially removing at least a portion of the carbon vacancy reduction material is less than about one percent of a carrier concentration of any material in the silicon carbide epitaxial structure.

9. The method of claim 1 further comprising substantially removing the carbon vacancy reduction material by removing the surface of the silicon carbide epitaxial structure after annealing the silicon carbide epitaxial structure, such that a thickness of removed material from the silicon carbide epitaxial structure is less than about three micrometers.

10. The method of claim 1 wherein the carbon vacancy reduction material is not subsequently removed from the silicon carbide epitaxial structure.

11. The method of claim 1 wherein the average carrier lifetime in the silicon carbide epitaxial structure after annealing the silicon carbide epitaxial structure is at least ten times an average carrier lifetime in the silicon carbide epitaxial structure without the carbon vacancy reduction material, wherein the average carrier lifetime in the silicon carbide epitaxial structure without the carbon vacancy reduction material is about three microseconds.

12. The method of claim 1 wherein the carbon vacancy reduction material comprises at least one selected from a group consisting of Group III and Group VIII of a Periodic Table of the Elements.

13. The method of claim 1 wherein the carbon vacancy reduction material comprises hydrogen.

14. The method of claim 1 wherein during the annealing of the silicon carbide epitaxial structure, a temperature of the silicon carbide epitaxial structure is between about 1650 and about 1800 degrees Celsius.

15. The method of claim 1 wherein during the annealing of the silicon carbide epitaxial structure, a temperature of the silicon carbide epitaxial structure is between about 1650 and about 1800 degrees Celsius for a duration of greater than twenty minutes.

16. The method of claim 1 wherein during the annealing of the silicon carbide epitaxial structure, a temperature of the silicon carbide epitaxial structure is between about 1500 and about 1600 degrees Celsius.

17. The method of claim 1 wherein the carbon vacancy reduction material does not comprise carbon.

18. A semiconductor die comprising:
a substrate; and
a silicon carbide epitaxial structure on the substrate comprising:
at least three layers, wherein at least one of the at least three layers is a P-type silicon carbide layer and another of the at least three layers is an N-type silicon carbide layer;
an intrinsic silicon carbide layer between the P-type silicon carbide layer and the N-type silicon carbide layer; and
carbon vacancy reduction material, which has been implanted into a surface of the silicon carbide epitaxial structure, wherein the silicon carbide epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the silicon carbide epitaxial structure, thereby increasing an average carrier lifetime in the silicon carbide epitaxial structure.

19. The semiconductor die of claim 18 wherein a structure thickness of the silicon carbide epitaxial structure is equal to at least 100 micrometers.

20. The semiconductor die of claim 18 wherein a structure thickness of the silicon carbide epitaxial structure is equal to at least 150 micrometers.

21. The semiconductor die of claim 18 wherein a structure thickness of the silicon carbide epitaxial structure is equal to at least 200 micrometers.

22. The semiconductor die of claim 18 wherein the substrate comprises silicon carbide.

23. The method of claim 1 wherein the N-type silicon carbide layer is on the substrate.

24. The method of claim 23 wherein the P-type silicon carbide layer is on the intrinsic silicon carbide layer.

25. The method of claim 1 wherein the P-type silicon carbide layer is on the substrate.

26. The method of claim 25 wherein a first N-type silicon carbide layer is on the intrinsic silicon carbide layer.

27. The semiconductor die of claim 18 wherein the carbon vacancy reduction material does not comprise carbon.

28. The method of claim 1 wherein during the annealing of the silicon carbide epitaxial structure, a temperature of the silicon carbide epitaxial structure is between about 1650 and about 1800 degrees Celsius for a duration of between about twenty minutes and about two hours.

29. The method of claim 1 wherein during the annealing of the silicon carbide epitaxial structure, a temperature of the silicon carbide epitaxial structure is between about 1650 and about 1800 degrees Celsius for a duration of between about twenty minutes and about ten hours.

30. A method comprising:
providing a substrate;
forming a silicon carbide epitaxial structure on the substrate, the silicon carbide epitaxial structure having at least three layers, wherein at least one of the three layers is an N-type silicon carbide layer and another of the three layers is a P-type silicon carbide layer;
forming an intrinsic silicon carbide layer between the P-type silicon carbide layer and the N-type silicon carbide layer ;
ion implanting a carbon vacancy re

Assignees

• Oloughlin Michael John
• Cheng Lin
• Burk Jr Albert Augustus
• Agarwal Anant Kumar
• Suvorov Alexander
• Cree Inc

Inventors

• O'Loughlin Michael John
• Cheng Lin
• Burk Jr Albert Augustus
• Agarwal Anant Kumar
• Suvorov Alexander

Classifications

• H10P30/208

  of electrically inactive species · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10P36/00

  Gettering within semiconductor bodies · CPC title

• H10P14/38

  characterised by treatments done after the formation of the materials · CPC title