Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devices

Patent metadata

Field	Value
Publication number	US-10541127-B2
Application number	US-201615336901-A
Country	US
Kind code	B2
Filing date	Oct 28, 2016
Priority date	Nov 6, 2015
Publication date	Jan 21, 2020
Grant date	Jan 21, 2020

Abstract

A material layer, a semiconductor device including the material layer, and methods of forming the material layer and the semiconductor device are provided herein. A method of forming a SiOCN material layer may include supplying a silicon source onto a substrate, supplying a carbon source onto the substrate, supplying an oxygen source onto the substrate, supplying a nitrogen source onto the substrate, and supplying hydrogen onto the substrate. When a material layer is formed according to a method of the present inventive concepts, a material layer having a high tolerance to wet etching and/or good electric characteristics may be formed, and may even be formed when the method is performed at a low temperature.

First claim

What is claimed is:

1. A method of forming a SiOCN material layer, the method comprising performing a plurality of first deposition cycles, each performance of the first deposition cycle comprising ordered operations of:
supplying a silicon source onto a substrate; then
supplying hydrogen onto the substrate; then
supplying a carbon source onto the substrate; then
supplying an oxygen source onto the substrate; and then
supplying a nitrogen source onto the substrate, thereby forming the SiOCN material layer, and
the method further comprising performing a plurality of second deposition cycles performed prior to the plurality of the first deposition cycles, each performance of the second deposition cycle comprising ordered operations of: supplying the silicon source onto the substrate, supplying the carbon source onto the substrate, supplying the oxygen source onto the substrate, supplying the nitrogen source onto the substrate,
wherein the plurality of second deposition cycles are devoid of supplying hydrogen onto the substrate,
wherein at least one of the supplying of the silicon source, the supplying of the carbon source, and the supplying of the nitrogen source of the first deposition cycle comprises supplying RF power for forming plasma; and
wherein the method comprises:
a first phase comprising forming a first portion of the SiOCN material layer having a first thickness;
a second phase comprising forming a second portion of the SiOCN material layer having a second thickness, wherein the second phase is after the first phase; and
a third phase comprising forming a third portion of the SiOCN material layer having a third thickness, wherein the third phase is after the second phase,
wherein each of the first phase, second phase, and third phase comprises performing the plurality of first deposition cycles and/or the plurality of second deposition cycles, and wherein the first deposition cycle is performed only in the first phase and the third phase and the first deposition cycle is not performed in the second phase.

2. The method of claim 1 , wherein the silicon source is a silane-based silicon precursor substituted with a halogen.

3. The method of claim 1 , wherein the supplying of the hydrogen onto the substrate is performed at a temperature in a range of about 400° C. to about 700° C.

4. The method of claim 1 , wherein the method further comprises performing at least one deposition cycle that comprises in the following order: supplying of the silicon source onto the substrate, then supplying of the hydrogen onto the substrate, then supplying of the carbon source onto the substrate, then supplying of the oxygen source onto the substrate, and then supplying of the nitrogen source onto the substrate, and
wherein the supplying of the nitrogen source onto the substrate in the at least one deposition cycle is followed by performing a next deposition cycle that begins with the supplying of the silicon source onto the substrate.

5. The method of claim 4 , wherein the method further comprises performing at least one deposition cycle that comprises in the following order: supplying of the silicon source onto the substrate, then a first supplying of the carbon source onto the substrate, then supplying of the oxygen source onto the substrate, then supplying of the nitrogen source onto the substrate, and then a second supplying of the carbon source onto the substrate, and
wherein, after the second supplying of the carbon source onto the substrate, a subsequent deposition cycle begins with the supplying of the silicon source onto the substrate.

6. The method of claim 1 , wherein the supplying of the hydrogen does not include generating and/or supplying plasma.

7. A method of forming a low-dielectric constant material layer, the method comprising performing a plurality of first deposition cycles, each performance of the first deposition cycle comprising ordered operations of:
supplying a silicon source onto a substrate;
supplying hydrogen onto the substrate directly after the supplying of the silicon source; and
supplying an additional component source onto the substrate directly after the supplying of the hydrogen, and
the method further comprising performing a plurality of second deposition cycles performed prior to the plurality of first deposition cycles, each performance of the second deposition cycles comprising operations of: supplying the silicon source onto the substrate, and supplying the additional component source onto the substrate,
wherein the plurality of second deposition cycles are devoid of supplying hydrogen onto the substrate,
wherein the supplying of the additional component source comprises supplying a carbon source, and
wherein the method comprises:
a first phase comprising forming a first portion of the low-dielectric constant material layer having a first thickness;
a second phase comprising forming a second portion of the low-dielectric constant material layer having a second thickness, wherein the second phase is after the first phase; and
a third phase comprising forming a third portion of the low-dielectric constant material layer having a third thickness, wherein the third phase is after the second phase,
wherein each of the first phase, second phase, and third phase comprises performing the plurality of first deposition cycles and/or the plurality of second deposition cycles, and wherein the first deposition cycle is performed only in the first phase and the third phase and the first deposition cycle is not performed in the second phase.

8. The method of claim 7 , wherein the supplying of the additional component source further comprises supplying at least one of an oxygen source, a boron source, and a nitrogen source.

9. The method of claim 8 , wherein the supplying of the additional component source further comprises supplying the nitrogen source, and
the supplying of the carbon source is followed by the supplying of the nitrogen source.

10. The method of claim 8 , wherein
the supplying of the additional component source comprises supplying the oxygen source, and
the supplying of the carbon source is followed by the supplying of the oxygen source.

11. The method of claim 8 , wherein
the supplying of the additional component source comprises supplying the boron source and supplying the nitrogen source, and
the supplying of the boron source is followed by the supplying of the nitrogen source.

12. The method of claim 8 , wherein
the supplying of the additional component source comprises supplying the boron source and the nitrogen source,
the supplying of the boron source is followed by the supplying of the carbon source, and
the supplying of the carbon source is followed by the supplying of the nitrogen source.

13. A method of forming a SiOCN material layer, the method comprising:
performing a plurality of first deposition cycles, each performance of the first deposition cycle comprising separately supplying a silicon source onto a substrate directly followed by supplying hydrogen onto the substrate, and
performing a plurality of second deposition cycles before the plurality of first deposition cycles,
wherein each performance of the first deposition cycle comprises separately supplying the silicon source, the hydrogen, and a carbon source onto the substrate,
wherein each performance of the second deposition cycle comprises supplying the silicon source onto the substrate and does not include supplying the hydrogen onto the substrate, thereby forming the SiOCN material layer, and
wherein the method comprises:
a first phase comprising forming a first portion of the SiOCN material layer hav

Assignees

• Tak Yong Suk
• Park Gi Gwan
• Kim Jin Bum
• Koo Bon Young
• Park Ki Yeon
• Lee Tae Jong
• Samsung Electronics Co Ltd

Inventors

• Tak Yong-Suk
• Park Gi-Gwan
• Kim Jin-Bum
• Koo Bon-Young
• Park Ki-Yeon
• Lee Tae-Jong

Classifications

• H10P14/6687

  the compound comprising silicon and nitrogen · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10D64/01318

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title