Method for producing liquid dispersion of ceramic microparticles
US-2016122251-A1 · May 5, 2016 · US
SiC powder, SiC sintered body, SiC slurry and manufacturing method of the same
US10541064B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10541064-B2 |
| Application number | US-201615363147-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 29, 2016 |
| Priority date | Jul 29, 2015 |
| Publication date | Jan 21, 2020 |
| Grant date | Jan 21, 2020 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A method of manufacturing a silicon carbide (SiC) sintered body and a SiC sintered body obtained by the method are provided. The method includes: preparing a composite powder by subjecting a SiC raw material and a sintering aid raw material to mechanical alloying; and sintering the composite powder, wherein the sintering aid is at least one selected from the group consisting of an Al—C-based material, an Al—B—C-based material, and a B—C-based material. Accordingly, a SiC sintered body that can be sintered at low temperature, can be densified, and has high strength and high electrical conductivity can be prepared.
First claim
Opening claim text (preview).
What is claimed is: 1. A silicon carbide (SiC) sintered body, comprising: a sintering aid, wherein the sintering aid includes Al, the SiC sintered body contains 1.17 to 4.38 wt % Al in grains thereof, and the SiC sintered body has a specific resistance of 1 to 10 −4 Ω·cm. 2. The SiC sintered body of claim 1 , wherein the SiC sintered body further contains 0.1 wt % or more of B in the grains thereof. 3. A SiC slurry, comprising: a SiC composite powder; and a dispersant, wherein the content of the dispersant is 0.5 to 2 wt % relative to 100 wt % of the SiC composite powder, wherein the SiC composite powder includes a sintering aid, wherein the sintering aid includes Al, the SiC composite powder contains 1.17 to 4.38 wt % Al in grains, and the SiC composite powder has a specific resistance of 1 to 10 −4 Ω·cm. 4. The SiC slurry of claim 3 , wherein the dispersant is polyethyleneimine (PEI) or tetramethyl ammonium hydroxide (TMAH). 5. The SiC slurry of claim 3 , wherein the SiC composite powder comprises a sintering aid, and the sintering aid is at least one selected from the group consisting of an Al—C-based material and an Al—B—C-based material. 6. The SiC slurry of claim 5 , wherein the content of the sintering aid exceeds 0, but is not higher than 13 wt %, relative to 100 wt % of the SiC composite powder.
Assignees
Inventors
Classifications
Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS] · CPC title
Pressure sintering · CPC title
Milling · CPC title
Beta silicon carbide · CPC title
Carbon black · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US10541064B2 cover?
- A method of manufacturing a silicon carbide (SiC) sintered body and a SiC sintered body obtained by the method are provided. The method includes: preparing a composite powder by subjecting a SiC raw material and a sintering aid raw material to mechanical alloying; and sintering the composite powder, wherein the sintering aid is at least one selected from the group consisting of an Al—C-based ma…
- Who is the assignee on this patent?
- Korea Inst Mach & Materials
- What technology area does this patent fall under?
- Primary CPC classification H01B1/04. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 21 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).