Biosensor and detection device

Patent metadata

Field	Value
Publication number	US-10538800-B2
Application number	US-201916506266-A
Country	US
Kind code	B2
Filing date	Jul 9, 2019
Priority date	Sep 18, 2015
Publication date	Jan 21, 2020
Grant date	Jan 21, 2020

Abstract

A TFT biosensor includes a gate electrode (silicon substrate), a reference electrode, and enzyme that is fixed to an insulating substrate spatially separated from the gate electrode and the reference electrode. A pH variation in the vicinity of an ion-sensitive insulating film is induced by a reaction between the enzyme and a sensing object material. The TFT biosensor can detect a concentration of the sensing object material with high sensitivity by detecting the pH variation as a threshold voltage shift of characteristics of a gate-source voltage to a source-drain current.

First claim

What is claimed is:

1. A biosensor, comprising:
a semiconductor active layer;
a first gate insulating film that is provided on a first surface of the semiconductor active layer, and insulates the semiconductor active layer and a first gate electrode from each other;
a second gate insulating film that is provided on a second surface of the semiconductor active layer;
a second gate electrode that is provided on the second gate insulating film, and extends to a position that is two-dimensionally spaced away from a region overlapping with the semiconductor active layer; and
an enzyme that is fixed to an extension end side of the second gate electrode, and reacts with a material in a solution to modulate a voltage that is applied to the second gate electrode,
wherein an electrostatic capacity per unit area of the second gate insulating film is greater than an electrostatic capacity per unit area of the first gate insulating film.

2. A biosensor, comprising:
a semiconductor active layer;
a first gate insulating film that is provided on a first surface of the semiconductor active layer, and insulates the semiconductor active layer and a first gate electrode from each other;
a second gate insulating film that is provided on a second surface of the semiconductor active layer;
a second gate electrode that is provided on the second gate insulating film, and extends to a position that is two-dimensionally spaced away from a region overlapping with the semiconductor active layer;
an ion-sensitive insulating film that is provided on the second gate electrode; and
an enzyme that is fixed onto the ion-sensitive insulating film, and reacts with a material in a solution to allow a potential variation in the ion-sensitive insulating film to occur,
wherein an electrostatic capacity per unit area of the second gate insulating film is greater than an electrostatic capacity per unit area of the first gate insulating film.

3. The biosensor according to claim 2 , further comprising:
a detection unit that detects a potential on the ion-sensitive insulating film after amplifying the potential with a value of a ratio obtained by dividing the electrostatic capacity per unit area of the second gate insulating film by the electrostatic capacity per unit area of the first gate insulating film.

4. A biosensor, comprising:
a semiconductor active layer;
a first gate insulating film that is provided on a first surface of the semiconductor active layer, and insulates the semiconductor active layer and a first gate electrode from each other;
a second gate insulating film that is provided on a second surface of the semiconductor active layer;
a second gate electrode that is provided on the second gate insulating film, and extends to a position that is two-dimensionally spaced away from a region overlapping with the semiconductor active layer;
an ion-sensitive insulating film that is provided on the second gate electrode; and
a plurality of enzymes which are fixed onto the ion-sensitive insulating film, and react with a material in a solution to allow a potential variation in the ion-sensitive insulating film to occur,
wherein the plurality of enzymes are disposed on the ion-sensitive insulating film with a regular interval or in a random manner in order for a surface of the ion-sensitive insulating film to come into contact with the solution, and
an electrostatic capacity per unit area of the second gate insulating film is greater than an electrostatic capacity per unit area of the first gate insulating film.

5. The biosensor according to claim 4 , further comprising:
a detection unit that detects a potential on the ion-sensitive insulating film after amplifying the potential with a value of a ratio obtained by dividing the electrostatic capacity per unit area of the second gate insulating film by the electrostatic capacity per unit area of the first gate insulating film.

Assignees

• Tianma Japan Ltd
• Tianma Microelectronics Co Ltd

Inventors

• Takechi Kazushige
• Iwamatsu Shinnosuke
• Abe Yutaka
• Yahagi Toru
• Konno Shunsuke
• Katoh Mutsuto

Classifications

• G01N27/4145 Primary

  specially adapted for biomolecules, e.g. gate electrode with immobilised receptors · CPC title

• C12Q1/006 Primary

  for glucose · CPC title

• G01N2333/90206

  acting on the CH-CH group of donors (1.3) · CPC title

• C12Q1/002

  Electrode membranes · CPC title