Drive mode and sense mode resonance frequency matching

Patent metadata

Field	Value
Publication number	US-10538427-B2
Application number	US-201715682408-A
Country	US
Kind code	B2
Filing date	Aug 21, 2017
Priority date	Aug 21, 2017
Publication date	Jan 21, 2020
Grant date	Jan 21, 2020

Abstract

In some embodiments, a micro electro mechanical system (MEMS) includes a proof mass, sense electrodes, sense circuitry, and a frequency matching circuitry. The proof mass is configured to move responsive to stimuli. The sense electrodes are configured to generate a signal responsive to the proof mass moving. The sense circuitry is coupled to the sense electrodes. The sense circuitry is configured to receive the generated signal and further configured to process the generated signal. The frequency matching circuitry is configured to apply a DC voltage to the sense electrodes. The DC voltage is configured to change a stiffness of a spring of the proof mass. According to some embodiments, the change in the stiffness of the spring matches a resonance frequency between a sense mode and a drive mode. According to some embodiments, the sense electrodes are a comb structure.

First claim

What is claimed is:

1. A micro electro mechanical system (MEMS) comprising:
a proof mass configured to move responsive to stimuli;
sense electrodes configured to generate a signal responsive to the proof mass moving;
sense circuitry coupled to the sense electrodes, wherein the sense circuitry is configured to receive the generated signal and further configured to process the generated signal; and
a frequency matching circuitry configured to apply a direct current (DC) voltage to the sense electrodes, wherein the DC voltage is configured to change a stiffness of a spring of the proof mass and wherein the change in the stiffness of the spring matches a resonance frequency between a sense mode and a drive mode, wherein the frequency matching circuitry comprises:
a diode;
a capacitor coupled to the diode; and
an NMOS switch,
wherein the diode is configured to charge the capacitor when the NMOS switch is open, and wherein the NMOS switch is configured to electrically connect the capacitor to the sense electrodes and to the sense circuitry when the NMOS switch is closed, wherein the DC voltage is a voltage from the capacitor being applied to the sense electrodes when the NMOS switch closes, and wherein the diode is electrically disconnected from the capacitor when the NMOS switch is closed, and wherein the NMOS switch is protected against high voltage stress by opening the NMOS switch when the capacitor is being charged by the diode and by closing the NMOS switch when the capacitor is not being charged by the diode.

2. The MEMS as described in claim 1 , wherein the sense electrodes are a comb structure.

3. The MEMS as described in claim 1 , wherein a circuitry for generating a signal for closing and opening the NMOS switch comprises:
another diode;
a level shifter configured to receive a signal having a first voltage value or a second voltage value and wherein the level shifter is configured to generate a shifted signal having the first voltage value or a third voltage value; and
another capacitor coupled between the diode and the level shifter, wherein a voltage associated with the another capacitor is the DC voltage being applied to the sense electrodes, and wherein the another capacitor is charged using the another diode and output of the level shifter, and wherein the DC voltage is a sum of the first voltage value and a voltage being applied by the diode or a sum of the third voltage value and the voltage being applied by the another diode.

4. The MEMS as described in claim 1 , wherein the frequency matching circuitry is coupled to a capacitor that is coupled to the sense circuitry, wherein the capacitor masks the sense circuitry from the DC voltage being applied.

5. The MEMS as described in claim 1 further comprising:
a force feedback circuitry configured to apply a charge associated with a sensed signal to the sense electrodes during a forcing time period to move the proof mass from a first position to a second position and wherein the sense circuitry is inactive during the forcing time period, wherein the force feedback circuitry and the sense circuitry are time multiplexed, and wherein the sense electrodes are used for sensing, for force feedback and for matching the resonance frequency between the sense mode and the drive mode.

6. A micro electro mechanical system (MEMS) comprising:
a proof mass configured to move responsive to stimuli;
sense electrodes configured to generate a signal responsive to the proof mass moving; and
a frequency modifying circuitry configured to apply a direct current (DC) voltage to the sense electrodes, wherein the DC voltage is configured to change a stiffness of a spring of the proof mass, and wherein the change in the stiffness of the spring matches a resonance frequency in a sense mode to a resonance frequency in a drive mode, wherein the frequency modifying circuitry comprises:
a diode;
a capacitor coupled to the diode; and
an NMOS switch,
wherein the diode is configured to charge the capacitor when the NMOS switch is open, and wherein the NMOS switch is configured to electrically connect the capacitor to the sense electrodes when the NMOS switch is closed, wherein the DC voltage is a voltage from the capacitor being applied to the sense electrodes when the NMOS switch closes, and wherein the diode is electrically disconnected from the capacitor when the NMOS switch is closed, and wherein the NMOS switch is protected against high voltage stress by opening the NMOS switch when the capacitor is being charged by the diode and by closing the NMOS switch when the capacitor is not being charged by the diode.

7. The MEMS as described in claim 6 , wherein the sense electrodes are a comb structure.

8. The MEMS as described in claim 6 , wherein a circuitry for generating a signal for closing and opening the NMOS switch comprises:
another diode;
a level shifter configured to receive a signal having a first voltage value or a second voltage value and wherein the level shifter is configured to generate a shifted signal having the first voltage value or a third voltage value; and
another capacitor coupled between the diode and the level shifter, wherein a voltage associated with the another capacitor is the DC voltage being applied to the sense electrodes, and wherein the another capacitor is charged using the another diode and output of the level shifter, and wherein the DC voltage is a sum of the first voltage value and a voltage being applied by the diode or a sum of the third voltage value and the voltage being applied by the another diode.

9. The MEMS as described in claim 6 further comprising:
a force feedback circuitry configured to apply a charge associated with a sensed signal to the sense electrodes during a forcing time period to move the proof mass from a first position to a second position, and wherein the sense electrodes are used for sensing, for force feedback and for matching the resonance frequency between the sense mode and the drive mode.

10. A micro electro mechanical system (MEMS) comprising:
a proof mass configured to move responsive to stimuli;
sense electrodes configured to generate a signal responsive to the proof mass moving;
sense circuitry coupled to the sense electrodes, wherein the sense circuitry is configured to receive the generated signal and further configured to process the generated signal; and
a frequency matching circuitry configured to apply a direct current (DC) voltage to the sense electrodes, wherein the DC voltage is configured to change a stiffness of a spring of the proof mass and wherein the change in the stiffness of the spring matches a resonance frequency between a sense mode and a drive mode, wherein the frequency matching circuitry comprises:
a PMOS switch;
a capacitor coupled to the PMOS switch; and
a NMOS switch,

wherein the capacitor is configured to charge when the PMOS switch closes and when the NMOS switch opens, and wherein the capacitor is electrically connected to the sense electrodes when the NMOS switch closes and when the PMOS switch opens and wherein the DC voltage is applied to the sense electrodes when the capacitor is electrically connected to the sense electrodes, and wherein the NMOS switch is protected against high voltage stress by opening the NMOS switch when the capacitor is being charged and by closing the NMOS switch when the capacitor is not being charged.

11. The MEMS as described in claim 10 , wherein the sense electrodes are a comb structure.

12. The MEMS as described in claim 10 , wherein the frequency matching circuitry is coupled to a capacitor that is coupled to the sense circuitry, wherein the capacitor masks the sense circuitry fro

Assignees

• Invensense Inc

Inventors

• Shirvani Alireza
• Kumar Sagar

Classifications

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• G01C19/5776

  Signal processing not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719 · CPC title

• G01P15/125 Primary

  by capacitive pick-up · CPC title

• G01C19/5656

  the devices involving a micromechanical structure · CPC title

• G01P15/0975

  by acoustic surface wave resonators or delay lines · CPC title