Light-emitting diode and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-10535803-B2
Application number	US-201816005692-A
Country	US
Kind code	B2
Filing date	Jun 12, 2018
Priority date	Jan 8, 2013
Publication date	Jan 14, 2020
Grant date	Jan 14, 2020

Abstract

A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.

First claim

What is claimed is:

1. A method for manufacturing a light emitting diode, comprising:
forming a semiconductor stack by sequentially stacking a first semiconductor layer, an active layer, a second semiconductor layer on a substrate;
preparing a first aqueous solution, a second aqueous solution, and the semiconductor stack having the second semiconductor layer exposed thereon;
dipping the semiconductor stack in the first aqueous solution to allow Zn− ions to be adsorbed to the second semiconductor layer;
cleaning the semiconductor stack having the absorbed Zn− ions;
dipping the semiconductor stack having the absorbed Zn− ions in the second aqueous solution to form a first transparent conductive layer having a monolayer structure on the second semiconductor layer;
forming a second transparent conductive layer on the first transparent conductive layer; and
forming electrodes on the semiconductor stack.

2. The method for manufacturing a light emitting diode of claim 1 , further comprising:
forming a mesa structure by mesa etching the semiconductor stack;
forming a passivation layer on the semiconductor stack of the mesa structure;
applying a photoresist to the passivation layer; and
exposing the second semiconductor layer by removing the photoresist and the passivation layer.

3. The method for manufacturing a light emitting diode of claim 1 , wherein the first aqueous solution is an aqueous solution dissolved with the Zn− ions.

4. The method for manufacturing a light emitting diode of claim 1 , wherein the second aqueous solution is deionized (DI) water.

5. The method for manufacturing a light emitting diode of claim 1 , wherein forming the first transparent conductive layer comprises repeatedly forming a plurality of first transparent conductive layers each having the monolayer structure.

6. The method for manufacturing a light emitting diode of claim 1 , further comprising: after forming the first transparent conductive layer, forming a resistive area by etching the first transparent conductive layer to expose the second semiconductor layer.

7. The method for manufacturing a light emitting diode of claim 6 , further comprising forming a distributed Bragg reflector (DBR) layer in the resistive area.

8. The method for manufacturing a light emitting diode of claim 5 , wherein forming the second transparent conductive layer comprises, after forming the second transparent conductive layer, repeatedly forming a plurality of second transparent conductive layers.

9. The method for manufacturing a light emitting diode of claim 1 , further comprising: after forming the second transparent conductive layer,
exposing a surface of the second transparent conductive layer; and
performing surface treatment of the second transparent conductive layer.

10. A method for manufacturing a light emitting diode, comprising:
forming a semiconductor stack by sequentially stacking a first semiconductor layer, an active layer, a second semiconductor layer on a substrate;
pre-dipping the semiconductor stack in a solution dissolved with Zn− ions;
dipping the semiconductor stack in an aqueous solution to form a first transparent conductive layer on the second semiconductor layer;
forming a second transparent conductive layer on the first transparent conductive layer; and
forming electrodes on the semiconductor stack.

Assignees

• Seoul Semiconductor Co Ltd

Inventors

• Shin Chan Seob
• Lim Hyoung Jin
• Kim Kyoung Wan
• Yoon Yeo Jin
• Richardson Jacob J
• Estrada Daniel
• O'Hara Evan C
• Shi Haoran

Classifications

• H01L2933/0058

  Electricity · mapped topic

• H01L33/42 Primary

  Electricity · mapped topic

• H01L33/60

  Electricity · mapped topic

• H01L33/46

  Electricity · mapped topic

• H01L2933/0016

  Electricity · mapped topic